摘要:
A memory system, system including the memory system and method of reducing memory system power consumption. The memory system includes multiple memory units allocable to one of a number of processor units, e.g., processors or processor cores. A memory controller receives requests for memory from the processor units and allocates sufficient space from the memory to each requesting processor unit. Allocated memory can include some Single Level per Cell (SLC) memory units storing a single bit per cell and other memory units storing more than one bit per cell. Thus, two processor units may be assigned identical memory space, while half, or fewer, than the number of cells of one are assigned to the other.
摘要:
A memory controller, system including the memory controller and method of controlling the memory. The memory controller receives requests for memory and content sensitively allocates memory space in a mixed cell memory. The memory controller allocates sufficient space including performance memory storing a single bit per cell and dense memory storing more than one bit per cell. Some or all of the memory may be selectable by the memory controller as either Single Level per Cell (SLC) or Multiple Level per Cell (MLC).
摘要:
A system and method for operating a unipolar memory cell array including a bidirectional access diode. The system includes a column voltage switch electrically coupled to a plurality of column voltages. The column voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of column voltages includes at least one select column voltage and one deselect column voltage. The system includes a row voltage switch electrically coupled to a plurality of row voltages. The row voltage switch includes an output electrically coupled to the bidirectional access diode. The plurality of row voltages includes at least one select row voltage and one deselect row voltage. The system includes a column and row decoder electrically coupled to a select line of the column and row voltage switches, respectively.
摘要:
A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.
摘要:
The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III-nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.
摘要:
A burst transmission method and a receiver resetting method and apparatus in a Passive Optical Network (PON) are provided. A burst receiver resetting method in a PON includes: receiving a preamble sequence and synchronizing data; after synchronizing the data, continuing to receive the data, and matching a Burst Terminator (BT); and resetting a receiver after successfully matching the BT. Meanwhile, an apparatus for implementing the method and a corresponding burst data transmission method are provided. By using the burst receiver resetting method and apparatus in the PON and the corresponding burst transmission method at an Optical Network Unit (ONU) burst transmission end, a Reach Extender (RE) does not need to unpack upstream burst bandwidth allocation information carried in downstream data. Therefore, the complexity of the implementation of the RE is reduced, and the method is simple and effective.
摘要:
A method and device for indicating an uncorrectable data block. The method includes: if a forward error correction decoding fails, setting synchronization character of at least one of the corresponding data blocks to a first character; and performing line decoding on the data block with the set first character, and outputting decoded data. With the invention, indicating the uncorrectable data block Simple and effective to a line decoding module can be implemented in case of a failure of FEC decoding.
摘要:
The present invention is directed to multi-specific/multivalent molecules of novel formats. The molecules with the formats of the present invention have desired yield and thermostability. The present invention also includes methods of producing and using the molecules described herein.
摘要:
Multi-array laterolog tool systems and methods acquire a set of array measurements sufficient to provide laterolog tool measurements of differing array sizes. Such systems and method offer multiple depths of investigation while offering greater measurement stability in borehole environments having high resistivity contrasts. In at least some system embodiments, a wireline or LWD tool body has a center electrode positioned between multiple pairs of guard electrodes and a pair of return electrodes. The tool's electronics provide a current from the center electrode to the pair of return electrodes and currents from each pair of guard electrodes to the pair of return electrodes. Each of the currents may be distinguishable by frequency or distinguishable by some other means. This novel arrangement of currents provides a complete set of measurements that enables one tool to simultaneously emulate a whole range of laterolog tools.
摘要:
The present invention provides novel compounds useful as proteasome inhibitors. The invention also provides pharmaceutical compositions comprising the compounds of the invention and methods of using the compositions in the treatment of various diseases.