公开(公告)号：US20130314983A1

公开(公告)日：2013-11-28

申请号：US13478932

申请日：2012-05-23

申请人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

发明人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

IPC分类号： G11C11/00 ,  H01L47/00

CPC分类号： G11C11/16 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/009 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

公开(公告)号：US08767447B2

公开(公告)日：2014-07-01

申请号：US13526585

申请日：2012-06-19

申请人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

发明人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

IPC分类号： G11C11/16 ,  H01L45/00

CPC分类号： G11C11/16 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/009 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

摘要翻译： 公开了一种在存储器件中存储位的方法。 存储器单元，存储器件由锗缺陷型硫族化物玻璃构成，其配置为在施加选定电压时在非晶相和结晶相之间交替，其中锗缺乏型硫族化物玻璃的漂移系数小于漂移系数 的未掺杂的硫族化物玻璃。 向所形成的存储单元施加电压以选择非晶相和晶相之一以存储该位。

公开(公告)号：US08737121B2

公开(公告)日：2014-05-27

申请号：US13478932

申请日：2012-05-23

申请人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

发明人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

IPC分类号： G11C13/00 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/009 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

公开(公告)号：US20130313501A1

公开(公告)日：2013-11-28

申请号：US13526585

申请日：2012-06-19

申请人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

发明人： Chung H. Lam ,  Jing Li ,  Binquan Luan ,  Glenn J. Martyna ,  Dennis M. Newns

IPC分类号： H01L45/00

CPC分类号： G11C11/16 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/009 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit.

摘要翻译： 公开了一种在存储器件中存储位的方法。 存储器单元，存储器件由锗缺陷型硫族化物玻璃构成，其配置为在施加选定电压时在非晶相和结晶相之间交替，其中锗缺乏型硫族化物玻璃的漂移系数小于漂移系数 的未掺杂的硫族化物玻璃。 向所形成的存储单元施加电压以选择非晶相和晶相之一以存储该位。

公开(公告)号：US07633079B2

公开(公告)日：2009-12-15

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US20090039331A1

公开(公告)日：2009-02-12

申请号：US11834851

申请日：2007-08-07

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00 ,  G11C11/00

CPC分类号： G11C17/165 ,  G11C13/0004 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料的结构。 该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07750335B2

公开(公告)日：2010-07-06

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US20090045388A1

公开(公告)日：2009-02-19

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L45/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US08902690B2

公开(公告)日：2014-12-02

申请号：US13584423

申请日：2012-08-13

申请人： Kailash Gopalakrishnan ,  Chung H. Lam ,  Jing Li ,  Robert K. Montoye

发明人： Kailash Gopalakrishnan ,  Chung H. Lam ,  Jing Li ,  Robert K. Montoye

IPC分类号： G11C8/00

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0023 ,  G11C13/0038 ,  G11C13/004 ,  G11C2213/71 ,  G11C2213/72

摘要： A system and method for operating a unipolar memory cell array including a bidirectional access diode. An example embodiment is a method including determining if the operating state of the unipolar memory cell is in a select state or a deselect state and the programming state is a read state or a write state. The method switches a column voltage switch based on the operating state and the programming state of the unipolar memory cell. The method further switches a row voltage switch based on the operating state and the programming state of the unipolar memory cell.

摘要翻译： 一种用于操作包括双向存取二极管的单极存储单元阵列的系统和方法。 示例性实施例是一种方法，包括确定单极存储器单元的操作状态是处于选择状态还是取消选择状态，并且编程状态是读取状态或写入状态。 该方法根据单极性存储单元的工作状态和编程状态切换列电压开关。 该方法还基于单极存储器单元的操作状态和编程状态来切换行电压开关。

公开(公告)号：US08687398B2

公开(公告)日：2014-04-01

申请号：US13407813

申请日：2012-02-29

申请人： Leland Chang ,  Chung H. Lam ,  Jing Li ,  Robert K. Montoye

发明人： Leland Chang ,  Chung H. Lam ,  Jing Li ,  Robert K. Montoye

IPC分类号： G11C15/00

CPC分类号： G11C15/00

摘要： A sensing circuit and method for sensing match lines in content addressable memory. The sensing circuit includes an inverter electrically coupled in a feedback loop to a match line. The inverter includes an inverting threshold of the match line. The match line is charged to substantially a first voltage threshold during a pre-charge phase. An evaluation phase occurs when the match line voltage drops from substantially the first voltage threshold to substantially the second voltage threshold.

摘要翻译： 一种用于感测内容可寻址存储器中匹配线的感测电路和方法。 感测电路包括电反馈回路中电耦合到匹配线的反相器。 逆变器包括匹配线的反相阈值。 在预充电阶段期间，将匹配线充电至基本上第一电压阈值。 当匹配线电压从基本上从第一电压阈值下降到基本上第二电压阈值时，发生评估阶段。