中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

191 records (took 0.022 seconds)

    High near infrared sensitivity image sensor
    104.
    发明授权
    High near infrared sensitivity image sensor 有权

    公开(公告)号：US09799699B2

    公开(公告)日：2017-10-24

    申请号：US14494960

    申请日：2014-09-24

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

    IPC: H01L21/00 ,  H01L27/146

    CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

    Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

    Dual-facing camera assembly
    105.
    发明授权
    Dual-facing camera assembly 有权

    公开(公告)号：US09305962B2

    公开(公告)日：2016-04-05

    申请号：US14528991

    申请日：2014-10-30

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

    Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate). In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

    Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
    106.
    发明授权
    Image sensor having metal contact coupled through a contact etch stop layer with an isolation region 有权
    图像传感器具有通过具有隔离区域的接触蚀刻停止层耦合的金属接触

    公开(公告)号：US09287308B2

    公开(公告)日：2016-03-15

    申请号：US13858754

    申请日：2013-04-08

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

    IPC: H01L31/062 ,  H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

    Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

    Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

    Layers for increasing performance in image sensors
    107.
    发明授权
    Layers for increasing performance in image sensors 有权
    用于提高图像传感器性能的层

    公开(公告)号：US09224881B2

    公开(公告)日：2015-12-29

    申请号：US13856993

    申请日：2013-04-04

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

    IPC: H01L21/02 ,  H01L31/0216 ,  H01L27/146

    CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

    Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

    Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

    Image sensor with pixel units having mirrored transistor layout
    108.
    发明授权
    Image sensor with pixel units having mirrored transistor layout 有权
    具有镜像晶体管布局的像素单元的图像传感器

    公开(公告)号：US09165959B2

    公开(公告)日：2015-10-20

    申请号：US13775747

    申请日：2013-02-25

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14641

    Abstract: An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region.

    Abstract translation: 图像传感器包括与第二像素单元水平相邻的第一像素单元。 每个像素单元包括多个光电二极管和共享的浮动扩散区域。 第一像素单元的第一像素晶体管区域具有多个像素晶体管。 第二像素单元的第二像素晶体管区域与第一像素晶体管区域水平相邻并且还具有多个像素晶体管。 第二像素晶体管区域的晶体管布局是第一像素晶体管区域的晶体管布局的次要图像。

    IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE
    109.
    发明申请
    IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE 有权
    具有介电电荷捕捉装置的图像传感器

    公开(公告)号：US20150295007A1

    公开(公告)日：2015-10-15

    申请号：US14250192

    申请日：2014-04-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H01L31/167

    CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

    Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

    Image sensor pixel cell with switched deep trench isolation structure
    110.
    发明授权
    Image sensor pixel cell with switched deep trench isolation structure 有权
    具有开关深沟槽隔离结构的图像传感器像素单元

    公开(公告)号：US09054007B2

    公开(公告)日：2015-06-09

    申请号：US13968210

    申请日：2013-08-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Hsin-Chih Tai

    IPC: H01L27/146 ,  H01L27/092

    CPC classification number: H01L27/14643 ,  H01L27/0928 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/1464

    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

    Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。 在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开 。 响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

Patent Agency Ranking