公开(公告)号：US06454634B1

公开(公告)日：2002-09-24

申请号：US09631784

申请日：2000-08-03

申请人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

发明人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

IPC分类号： B24B100

CPC分类号： B24B37/26 ,  B24B37/042 ,  B24D3/28

摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置， 接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。 改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。 该垫具有稳定的形态，可以容易且一致地再现。 垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。 这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。

公开(公告)号：US6093085A

公开(公告)日：2000-07-25

申请号：US149166

申请日：1998-09-08

申请人： Bradley J. Yellitz ,  Peter A. Burke

发明人： Bradley J. Yellitz ,  Peter A. Burke

IPC分类号： B24B37/16 ,  B24B37/24 ,  B24B37/26 ,  B24B49/08 ,  B24D7/14 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B29/00

CPC分类号： B24B37/26 ,  B24B37/16 ,  B24B37/24 ,  B24B49/08 ,  B24D7/14 ,  Y10S451/921

摘要： The present disclosure relates to a polishing pad including a pad structure having at least first and second polishing regions defined along a polishing surface of the pad structure. The first polishing region of the pad structure is less compressible than the second polishing region of the pad structure. The present disclosure also relates to a polish platen including a platen structure having at least first and second regions adapted for supporting a polishing pad. The first region of the platen structure is less compressible than the second region of the platen structure.

摘要翻译： 本公开涉及一种抛光垫，其包括具有至少沿衬垫结构的抛光表面限定的第一和第二抛光区的焊盘结构。 垫结构的第一抛光区域比垫结构的第二抛光区域更不可压缩。 本公开还涉及一种抛光台板，其包括具有适于支撑抛光垫的至少第一和第二区域的压板结构。 压板结构的第一区域比压板结构的第二区域更不可压缩。

公开(公告)号：US6057068A

公开(公告)日：2000-05-02

申请号：US205483

申请日：1998-12-04

申请人： Christopher H. Raeder ,  Thomas Brown ,  Peter A. Burke

发明人： Christopher H. Raeder ,  Thomas Brown ,  Peter A. Burke

IPC分类号： B24B49/00 ,  H01L21/306 ,  G03F9/00

CPC分类号： B24B37/005 ,  B24B49/00 ,  H01L21/30625

摘要： A method for measuring the planarization efficiency of a planarization process and a device for use with the method are provided. The device may be a substrate having a set of isolated features, such as trenches or hills, with different widths. In the method, a removable layer of material is formed over the substrate. The substrate features form corresponding features in the removable layer with varying dimensions. A pre-planarization thickness of the removable layer of material is measured at each feature and at one or more of isolation areas. The removable layer of material is then planarized using a planarization process associated with one or more process parameters. A post-planarization thickness of the removable is measured at each feature and at one or more of the isolation regions. The planarization efficiency of the planarization process is then determined as a function of the dimensions of the substrate features or corresponding features in the removable layers and/or one or more process parameters. The determined planarization efficiency may be output by, for example, generating a graph of the planarization efficiency or using the planarization efficiency to change one or more parameters of the planarization process.

摘要翻译： 提供了一种用于测量平面化处理的平坦化效率的方法和用于该方法的装置。 该装置可以是具有一组具有不同宽度的隔离特征（例如沟槽或丘陵）的基板。 在该方法中，在衬底上形成可去除的材料层。 衬底特征在具有不同尺寸的可移除层中形成相应的特征。 在每个特征和一个或多个隔离区域处测量可去除材料层的预平坦化厚度。 然后使用与一个或多个工艺参数相关联的平坦化处理将可移除的材料层平坦化。 在每个特征和一个或多个隔离区域处测量可去除的后平面化厚度。 然后，平坦化处理的平坦化效率被确定为可移除层中的衬底特征或相应特征的尺寸和/或一个或多个工艺参数的函数。 确定的平坦化效率可以通过例如生成平坦化效率的图形或者使用平坦化效率来改变平坦化处理的一个或多个参数来输出。

公开(公告)号：US6000281A

公开(公告)日：1999-12-14

申请号：US72263

申请日：1998-05-04

申请人： Peter A. Burke

发明人： Peter A. Burke

IPC分类号： G01Q60/00 ,  G01Q70/06 ,  G01B7/02 ,  G01B5/14 ,  G01B7/14

CPC分类号： G01B7/02 ,  B82Y35/00 ,  G01Q30/02 ,  Y10S977/854

摘要： A combined atomic force microscope and stylus profilometer adapted to measure critical dimensions on a surface. The stylus profilometer is placed at a first position sufficiently near an edge of a first feature and the atomic force microscope subsequently measures the distance from this first position to the edge. The stylus profilometer is then positioned at a second position sufficiently near an edge of a second feature, measuring the distance from the first position to the second position. The atomic force microscope then measures the distance from the second position to the edge of the second feature.

摘要翻译： 适用于测量表面上的临界尺寸的组合原子力显微镜和触笔轮廓仪。 触针轮廓仪被放置在第一位置处，足够靠近第一特征的边缘处，并且原子力显微镜随后测量从该第一位置到边缘的距离。 然后将触笔轮廓仪定位在足够接近第二特征的边缘的第二位置处，测量从第一位置到第二位置的距离。 原子力显微镜然后测量从第二位置到第二特征边缘的距离。

公开(公告)号：US5934978A

公开(公告)日：1999-08-10

申请号：US911744

申请日：1997-08-15

申请人： Peter A. Burke ,  Peter J. Beckage

发明人： Peter A. Burke ,  Peter J. Beckage

IPC分类号： C09G1/02 ,  C09K3/14 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

摘要翻译： 制造化学机械抛光浆料的方法包括将铁盐氧化剂与溶液混合以产生与溶解的铁盐氧化剂的混合物，过滤混合物以除去超过所选粒度的大部分预先存在的颗粒，加入悬浮剂 混合物，并在过滤混合物后向混合物中加入磨料颗粒。 有利地，当发生抛光时，预先存在的颗粒的刮擦显着地减少。

公开(公告)号：US5782962A

公开(公告)日：1998-07-21

申请号：US730947

申请日：1996-10-16

申请人： Peter A. Burke ,  Kenneth J. Flanagan ,  Abul Mansur

发明人： Peter A. Burke ,  Kenneth J. Flanagan ,  Abul Mansur

IPC分类号： C09G1/10 ,  C09G3/18 ,  C09G1/02 ,  C09G1/06 ,  C09G1/12

CPC分类号： C09G1/10

摘要： A surface protective composition especially for use on automobiles is prepared which contains about 0.1 to 5% of a film forming fluorine containing polymer, 0 to 10% of micronized wax, a hydrocarbon solvent, an organosilicone compound, a surfactant and water.

摘要翻译： 制备特别用于汽车的表面保护组合物，其含有约0.1至5％的成膜氟聚合物，0至10％的微粉化蜡，烃溶剂，有机硅氧烷化合物，表面活性剂和水。

公开(公告)号：US5753607A

公开(公告)日：1998-05-19

申请号：US625336

申请日：1996-04-01

申请人： Peter A. Burke ,  Kenneth J. Flanagan ,  Abul Mansur

发明人： Peter A. Burke ,  Kenneth J. Flanagan ,  Abul Mansur

IPC分类号： C09G1/04 ,  C11D3/18 ,  C11D3/37 ,  C11D3/24 ,  C09G1/12 ,  C11D1/825 ,  C11D3/32

CPC分类号： C11D3/3738 ,  C09G1/04 ,  C11D3/18 ,  C11D3/37 ,  C11D3/373 ,  C11D3/3749

摘要： A furniture cleaning and polishing composition that provides protection against water. The composition contains an admixture of A) about 0.01 to 4% by weight of a water repelling fluorinated polymer; B) up to 15% mineral oil; C) about 3 to 25% hydrocarbon solvent; D) about 0.1 to 5% silicone oil; about 0.01 to 5% surfactant, and the remainder water.

摘要翻译： 提供防水防护的家具清洁和抛光组合物。 该组合物含有A）约0.01至4重量％的斥水氟化聚合物的混合物; B）高达15％的矿物油; C）约3至25％烃溶剂; D）约0.1至5％硅油; 约0.01至5％的表面活性剂，其余为水。

公开(公告)号：US5449473A

公开(公告)日：1995-09-12

申请号：US290186

申请日：1994-08-15

申请人： Charles J. Bunczk ,  Peter A. Burke ,  William R. Camp ,  John L. Orehotsky

发明人： Charles J. Bunczk ,  Peter A. Burke ,  William R. Camp ,  John L. Orehotsky

IPC分类号： C11D1/22 ,  C11D1/24 ,  C11D3/18 ,  C11D3/37 ,  C11D3/395 ,  C11D17/00 ,  C11D3/43

CPC分类号： C11D3/3738 ,  C11D17/0056 ,  C11D3/18 ,  C11D3/373 ,  C11D3/3749 ,  C11D3/3955 ,  C11D1/22 ,  C11D1/24

摘要： In a solid lavatory cleansing block containing a surfactant, a germicide agent or an oxidizing agent and fillers, the improvement which comprises said cleansing block having a polybutene compound in an amount from about 0.1 to 8% by weight of the composition to stabilize the bleaching agent, said polybutene compound of the formula: ##STR1## wherein n can be varied to give an average molecular weight of 320 to 2,300.

摘要翻译： 在含有表面活性剂，杀菌剂或氧化剂和填料的固体洗手间清洁块中，其改进包括所述清洁块具有组合物重量的约0.1至8重量％的聚丁烯化合物，以稳定漂白剂 ，所述下式的聚丁烯化合物：其中n可以变化，得到平均分子量为320-2,300。

公开(公告)号：US5356513A

公开(公告)日：1994-10-18

申请号：US51915

申请日：1993-04-22

申请人： Peter A. Burke ,  Michael A. Leach

发明人： Peter A. Burke ,  Michael A. Leach

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/44 ,  H01L21/465

CPC分类号： H01L21/31053 ,  H01L21/76819

摘要： The invention provides a method for producing a substantially planar surface overlying features of a semiconductor structure. The method comprises forming alternating layers of a hard polishing material and a soft polishing material over the features of the semiconductor structure, and then polishing the alternating layers to form a substantially planar surface over the features. The method takes advantage of the polish rates of the various materials used as alternating layers to enhance the planarization process.

摘要翻译： 本发明提供一种用于制造覆盖半导体结构的特征的基本平坦的表面的方法。 该方法包括在半导体结构的特征上形成硬抛光材料和柔软抛光材料的交替层，然后抛光交替层以在特征上形成基本平坦的表面。 该方法利用用作交替层的各种材料的抛光速率来增强平坦化过程。

公开(公告)号：US5268330A

公开(公告)日：1993-12-07

申请号：US989604

申请日：1992-12-11

申请人： John H. Givens ,  James S. Nakos ,  Peter A. Burke ,  Craig M. Hill ,  Chung H. Lam

发明人： John H. Givens ,  James S. Nakos ,  Peter A. Burke ,  Craig M. Hill ,  Chung H. Lam

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L29/78 ,  H01L21/283 ,  H01L21/302

CPC分类号： H01L21/321 ,  H01L21/76802 ,  Y10S438/934

摘要： A passivating layer is deposited over an integrated circuit device, conventionally fabricated using silicidation, after which an insulating layer is deposited. The insulating layer is planarized and further polished to expose the passivating layer above the gate. The portion of the passivating layer above the gate is removed with little or no effect on the insulating layer or gate. A trench above one or both junctions (source or drain) is formed by removing insulation using the passivating layer as an etch stop, then removing a portion of the passivating layer above the junction with little or no effect on the junction or any isolation region present. The gate may be further silicided, and the opening above the gate and the trench above the junction may each be planarly filled with a low sheet resistance conductive material, forming contacts. The contact above the junction may be borderless.