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101.发明授权公开(公告)号：US11935984B2
公开(公告)日：2024-03-19
申请号：US18065910
申请日：2022-12-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US11925043B2
公开(公告)日：2024-03-05
申请号：US17072436
申请日：2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Moon Gyu Han , Heejae Lee , Eun Joo Jang , Tae Ho Kim , Kun Su Park , Won Sik Yoon , Hyo Sook Jang
IPC: H10K50/115 , H10K50/11 , H10K50/16 , H10K71/00 , H10K71/12 , H10K101/40 , H10K101/30
CPC classification number: H10K50/115 , H10K50/11 , H10K50/166 , H10K71/00 , H10K71/12 , H10K2101/30 , H10K2101/40
Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.
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103.发明授权公开(公告)号：US11834597B2
公开(公告)日：2023-12-05
申请号：US17532439
申请日：2021-11-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee Lee , Hyun A Kang , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Yuho Won , Eun Joo Jang
CPC classification number: C09K11/883 , C01B19/007 , C09K11/02 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , H10K50/115
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent:
RCONHR Chemical Formula 1
wherein each R is as defined herein;
heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture;
adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and
heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.-
104.发明授权公开(公告)号：US11781063B2
公开(公告)日：2023-10-10
申请号：US17726702
申请日：2022-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook Jang , Yuho Won , Sungwoo Hwang , Ji Yeong Kim , Eun Joo Jang
IPC: H01L51/52 , C09K11/08 , C08L57/10 , G02F1/13357 , C09D133/00 , C08F220/06 , C09D133/02 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00 , G02F1/1335
CPC classification number: C09K11/0883 , C08F220/06 , C08L57/10 , C09D133/00 , C09D133/02 , G02F1/133617 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00 , C08L2203/20 , G02F1/133614 , G02F2202/022 , G02F2202/102 , G02F2202/36 , G02F2203/20 , C08F220/06 , C08F220/20 , C08F220/1807
Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite:
(Absfirst−Absvalley)/Absfirst=VD.-
公开(公告)号：US11744096B2
公开(公告)日：2023-08-29
申请号：US17671970
申请日：2022-02-15
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Dae Young Chung , Kwanghee Kim , Eun Joo Jang , Tae Hyung Kim , Hongkyu Seo , Heejae Lee , Jaejun Chang
IPC: H01L51/50 , H10K50/115 , H10K50/13 , H10K71/00 , H10K71/15 , H10K71/40 , H10K101/30 , H10K102/00
CPC classification number: H10K50/115 , H10K50/13 , H10K71/00 , H10K71/15 , H10K71/441 , H10K2101/30 , H10K2102/351
Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
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Patent Agency Ranking
公开(公告)号：US11742443B2
公开(公告)日：2023-08-29
申请号：US17171198
申请日：2021-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae Jun , Eun Joo Jang , Soo Kyung Kwon , Taek Hoon Kim , Won Joo Lee
IPC: H01L31/0296 , H01L31/0304 , H01L31/0352 , B82Y40/00 , B82Y30/00
CPC classification number: H01L31/0296 , H01L31/0304 , H01L31/035218 , B82Y30/00 , B82Y40/00 , Y02E10/544 , Y10S977/774 , Y10S977/89
Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
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公开(公告)号：US11737301B2
公开(公告)日：2023-08-22
申请号：US17226158
申请日：2021-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Young Chung , Moon Gyu Han , Oul Cho , Tae Hyung Kim , Sujin Park , Hongkyu Seo , Eun Joo Jang
CPC classification number: H10K50/19 , C09K11/025 , C09K11/06 , H10K50/115 , H10K71/00 , H10K71/15 , C09K2211/10 , H10K85/111 , H10K85/115 , H10K85/1135 , H10K85/626
Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.
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公开(公告)号：US11718786B2
公开(公告)日：2023-08-08
申请号：US17675459
申请日：2022-02-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung Kim , Kwanghee Kim , Eun Joo Jang , Dae Young Chung , Sujin Park
CPC classification number: C09K11/025 , C09K11/562 , C09K11/565 , C09K11/70 , C09K11/703 , C09K11/883 , H01L33/06 , B82Y20/00 , B82Y40/00 , H10K50/115
Abstract: Quantum dots including semiconductor nanocrystals, methods of producing the same, and quantum dot solutions and electronic devices including the same. The quantum dots do not include cadmium, lead, or a combination thereof. The quantum dots include an organic ligand and a halogen on the surfaces, and the quantum dots are dispersible in an organic solvent to form organic solutions.
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公开(公告)号：US11639467B2
公开(公告)日：2023-05-02
申请号：US17497208
申请日：2021-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yong Wook Kim
IPC: C09K11/00 , H01B1/00 , H01L27/00 , C09K11/88 , C09K11/02 , C09K11/08 , H01L27/32 , H01B1/06 , B82Y20/00 , B82Y40/00 , G02F1/1335 , G02F1/13357
Abstract: A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.
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公开(公告)号：US11591518B2
公开(公告)日：2023-02-28
申请号：US17187926
申请日：2021-03-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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