Abstract:
A device including a near field transducer (NFT); a write pole; at least one dielectric material positioned between the NFT and the write pole; and an adhesion layer positioned between the NFT and the at least one dielectric material.
Abstract:
Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof.
Abstract:
Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof.
Abstract:
A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.
Abstract:
An apparatus includes a near field transducer positioned adjacent to an air bearing surface, a first magnetic pole, a heat sink positioned between the first magnetic pole and the near field transducer, and a diffusion barrier positioned between the near field transducer and the first magnetic pole. The diffusion barrier can be positioned adjacent to the magnetic pole or the near field transducer.
Abstract:
A near-field transducer includes a substrate that defines a substrate-parallel plane. The near-field transducer also includes a composite layer deposited on the substrate-parallel plane. The composite layer has a first layer of the plasmonic material and a second layer of an insertion material adjacent the substrate. The insertion material reduces plastic deformation of the near-field transducer at elevated temperatures.
Abstract:
An apparatus includes a near field transducer positioned adjacent to an air bearing surface, a first magnetic pole, a heat sink positioned between the first magnetic pole and the near field transducer, and a diffusion barrier positioned between the near field transducer and the first magnetic pole. The diffusion barrier can be positioned adjacent to the magnetic pole or the near field transducer.
Abstract:
A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2