公开(公告)号：US11545551B2

公开(公告)日：2023-01-03

申请号：US17047236

申请日：2019-04-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Shinya Sasagawa ,  Erika Takahashi ,  Katsuaki Tochibayashi ,  Ryo Arasawa

IPC: H01L29/24 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

公开(公告)号：US11530134B2

公开(公告)日：2022-12-20

申请号：US16487997

申请日：2018-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: C01G9/00 ,  H01L29/66 ,  H01L29/786 ,  B82Y30/00 ,  B82Y40/00

Abstract: A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.

公开(公告)号：US11522234B2

公开(公告)日：2022-12-06

申请号：US16640233

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Koji Kusunoki ,  Kazunori Watanabe ,  Ryota Tajima ,  Hideaki Shishido ,  Kensuke Yoshizumi

IPC: H01M10/48 ,  G01R31/382 ,  G01R31/371 ,  G01K1/14 ,  G06N3/04 ,  H02J7/00 ,  H01Q1/22 ,  H01Q1/38 ,  H01M50/20

Abstract: A semiconductor device capable of monitoring the state of a battery or the like is provided. The states of a plurality of batteries in a battery module is easily acquired. The semiconductor device that can be attached to an electrode of a battery or the like includes a first substrate, an element layer, and first to third conductive layers. The element layer includes a first circuit and a second circuit and is provided on a side of a first surface of the first substrate. The first conductive layer and the second conductive layer are provided on a side of a second surface positioned opposite to the first surface of the first substrate. The first circuit is electrically connected to each of the first conductive layer and the second conductive layer through an opening provided in the first substrate. The third conductive layer is provided to be stacked on a side opposite to the first substrate side of the element layer and electrically connected to the second circuit. The first conductive layer and the second conductive layer each function as a terminal, and the third conductive layer functions as an antenna.

公开(公告)号：US11515426B2

公开(公告)日：2022-11-29

申请号：US16897586

申请日：2020-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/146 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/15

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US11515340B2

公开(公告)日：2022-11-29

申请号：US17187928

申请日：2021-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Shunpei Yamazaki

IPC: H01L27/12 ,  G09G3/20 ,  G09G3/32 ,  G09G3/36 ,  G09G5/00 ,  H01L29/786

Abstract: A display device with high resolution is provided. A display device with high display quality is provided. A display device includes a display portion, a first terminal group, and a second terminal group. The display portion includes pixels, scan lines, and signal lines. The first terminal group and the second terminal group are apart from each other. The first terminal group includes first terminals and the second terminal group includes second terminals. The scan lines are each electrically connected to the pixels arranged in a row direction. The signal lines are each electrically connected to the pixels arranged in a column direction. The signal lines are each electrically connected to the first terminal or the second terminal. The display portion includes a first region where the signal lines electrically connected to the first terminals and the signal lines electrically connected to the second terminals are mixed.

公开(公告)号：US11495691B2

公开(公告)日：2022-11-08

申请号：US17056072

申请日：2019-05-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L27/12 ,  H01L29/792

Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US11488528B2

公开(公告)日：2022-11-01

申请号：US16756343

申请日：2018-10-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kei Takahashi ,  Shunpei Yamazaki

IPC: G09G3/3233 ,  H01L27/12 ,  H01L27/105 ,  H01L29/786 ,  G09G3/20 ,  H04N5/225

Abstract: To provide a display device capable of displaying a plurality of images by superimposition using a plurality of memory circuits provided in a pixel. A plurality of memory circuits are provided in a pixel, and signals corresponding to images for superimposition are retained in each of the plurality of memory circuits. In the pixel, the signals corresponding to the images for superimposition are added to each of the plurality of memory circuits. The signals are added to the signals retained in the memory circuits by capacitive coupling. A display element can display an image corresponding to a signal in which a signal written to a pixel through a wiring is added to the signals retained in the plurality of memory circuits. Reduction in the amount of arithmetic processing for displaying images by superimposition can be achieved.

公开(公告)号：US20220328695A1

公开(公告)日：2022-10-13

申请号：US17852423

申请日：2022-06-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/49 ,  H01L51/05 ,  H01L27/12 ,  H01L29/78

Abstract: The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

公开(公告)号：US11462645B2

公开(公告)日：2022-10-04

申请号：US17180968

申请日：2021-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Yukinori Shima ,  Kenichi Okazaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10 ,  H05B33/14

Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US11456385B2

公开(公告)日：2022-09-27

申请号：US17172261

申请日：2021-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.