公开(公告)号：US20050035000A1

公开(公告)日：2005-02-17

申请号：US10928022

申请日：2004-08-27

申请人： Whonchee Lee ,  Scott Meikle ,  Scott Moore

发明人： Whonchee Lee ,  Scott Meikle ,  Scott Moore

IPC分类号： B23H3/00 ,  B23H5/08 ,  B24B1/00 ,  B24B7/19 ,  H01L21/8242 ,  H01L29/00

CPC分类号： B23H5/08 ,  B24B1/002

摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

公开(公告)号：US06605539B2

公开(公告)日：2003-08-12

申请号：US09994668

申请日：2001-11-28

申请人： Whonchee Lee ,  Scott Meikle

发明人： Whonchee Lee ,  Scott Meikle

IPC分类号： H01L2348

CPC分类号： B23H5/08 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134

摘要： A method of patterning a metal surface by electro-mechanical polishing is described. A metal surface is placed in fluid communication with an abrasive surface of a pad. The two surfaces are moved relative to each other, in acidic fluid which contains abrasive particles. An electrical circuit is formed between the metal surface and abrasive pad and a current is supplied to the circuit. The patterned surface then is processed into a useful feature such as a bottom electrode for a DRAM capacitor.

摘要翻译： 描述了通过机电抛光图案化金属表面的方法。 金属表面被放置成与垫的研磨表面流体连通。 两个表面在含有磨料颗粒的酸性流体中相对于彼此移动。 在金属表面和研磨垫之间形成电路，并向电路供给电流。 然后，图案化表面被处理成有用的特征，例如用于DRAM电容器的底部电极。

公开(公告)号：US06391793B2

公开(公告)日：2002-05-21

申请号：US09385197

申请日：1999-08-30

申请人： Whonchee Lee ,  Pai Pan ,  Terry Gilton

发明人： Whonchee Lee ,  Pai Pan ,  Terry Gilton

IPC分类号： H01L21302

CPC分类号： H01L21/30604 ,  H01L21/76224

摘要： A silicon etching method includes providing a substrate assembly including an exposed silicon region and an exposed oxide region. An etch composition including an ammonium fluoride component, an inorganic acid component, and an oxidizing agent is also provided. The etch composition has a pH in the range of about 7.0 to about 8.0. The substrate assembly is exposed to the etch composition. Exposing the substrate assembly to the etch composition may result in etching the exposed silicon region at an etching rate that is greater than about 3 times the etching rate of the exposed oxide region and/or etching the silicon region at an etch rate greater than about 9 Å/minute. The etching method may be used in forming isolation structures. Further, etch compositions for performing the desired etch are provided.

摘要翻译： 硅蚀刻方法包括提供包括暴露的硅区域和暴露的氧化物区域的衬底组件。 还提供了包含氟化铵组分，无机酸组分和氧化剂的蚀刻组合物。 蚀刻组合物的pH值在约7.0至约8.0的范围内。 衬底组件暴露于蚀刻组合物。 将衬底组件暴露于蚀刻组合物可导致以大于暴露氧化物区域的蚀刻速率的约3倍的蚀刻速率蚀刻暴露的硅区域和/或以大于约9的蚀刻速率蚀刻硅区域 一分钟。 蚀刻方法可用于形成隔离结构。 此外，提供用于执行所需蚀刻的蚀刻组合物。

公开(公告)号：US06232232B1

公开(公告)日：2001-05-15

申请号：US09056323

申请日：1998-04-07

申请人： Whonchee Lee ,  Kevin J. Torek

发明人： Whonchee Lee ,  Kevin J. Torek

IPC分类号： H01L21465

CPC分类号： C03C15/00 ,  H01L21/31111

摘要： An organic acid/fluoride-containing solution etchant having high selectivity for BPSG to TEOS. In an exemplary situation, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. The etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etch with a known etchant may be utilized to etch the TEOS layer. The known etchant for the second etch can be less aggressive and, thus, not damage the components underlying the TEOS layer.

摘要翻译： 具有对BOSG对TEOS具有高选择性的有机含酸/氟化物溶液蚀刻剂。 在示例性情况下，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷对半导体器件中的其它部件的污染。 本发明的蚀刻剂可用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。 可以使用具有已知蚀刻剂的第二蚀刻来蚀刻TEOS层。 用于第二蚀刻的已知蚀刻剂可以较不具有侵蚀性，因此不会损坏TEOS层下面的部件。

公开(公告)号：US06210489B1

公开(公告)日：2001-04-03

申请号：US09448020

申请日：1999-11-23

申请人： Whonchee Lee ,  Richard C. Hawthorne ,  Li Li ,  Pai Hung Pan

发明人： Whonchee Lee ,  Richard C. Hawthorne ,  Li Li ,  Pai Hung Pan

IPC分类号： B08B308

CPC分类号： H01L21/02071 ,  H01L21/02063 ,  H01L21/76805 ,  H01L21/76814 ,  H01L27/10844 ,  Y10S134/902 ,  Y10S438/906

摘要： A surface having exposed doped silicon dioxide such as BPSG is cleaned with a solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning solutions include about 46 parts ammonium fluoride, about 9.5 parts hydrogen fluoride, and about 8.5 parts ammonium hydroxide in about 100 parts water by weight; and about 670 parts ammonium fluoride and about 3 parts hydrogen fluoride in about 1000 parts water by weight. The latter solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 670 parts ammonium fluoride and about 1.6 parts hydrogen fluoride in about 1000 parts water is most preferred.

摘要翻译： 具有暴露的掺杂二氧化硅（例如BPSG）的表面用蚀刻热氧化物的溶液进行清洗，该溶液蚀刻暴露的掺杂二氧化硅的速度至少三分之一，导致更彻底的清洁，较少去除暴露的掺杂二氧化硅。 公开了形成容器电容器的具体应用。 优选的清洁溶液包括约46份氟化铵，约9.5份氟化氢和约8.5份氢氧化铵，约100份水重量份; 约670份氟化铵和约3份氟化氢，约1000份水重量份。 后一种溶液也可用于清洁方法，其中耐火金属硅化物暴露于清洁溶液中，例如在间隔物形成之前或在浇口堆叠接触填充之前进行清洁，在这种情况下，约670份氟化铵和约1.6份 约1000份水中的氟化氢是最优选的。

公开(公告)号：US6103637A

公开(公告)日：2000-08-15

申请号：US382399

申请日：1999-08-25

申请人： Kevin James Torek ,  Whonchee Lee ,  Satish Bedge

发明人： Kevin James Torek ,  Whonchee Lee ,  Satish Bedge

IPC分类号： H01L21/306 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3165

CPC分类号： H01L21/31111 ,  H01L21/0276

摘要： The present invention relates to the fabrication of integrated circuit devices, and more particularly, to a method of etching inorganic antireflective layers without etching excessive amounts of an underlying oxide. According to one aspect of the present invention, the antireflective layer is selectively etched using an etchant which comprises about 35-40 wt. % NH.sub.4 F and about 0.9-5.0 wt. % H.sub.3 PO.sub.4 in an aqueous solution.

摘要翻译： 本发明涉及集成电路器件的制造，更具体地，涉及一种蚀刻无机抗反射层而不蚀刻过量的下面的氧化物的方法。 根据本发明的一个方面，使用含有约35-40重量％的蚀刻剂来选择性地蚀刻抗反射层。 ％NH 4 F和约0.9-5.0重量％ ％H 3 PO 4水溶液。

公开(公告)号：US6093652A

公开(公告)日：2000-07-25

申请号：US146765

申请日：1998-09-03

申请人： Pai-Hung Pan ,  Whonchee Lee

发明人： Pai-Hung Pan ,  Whonchee Lee

IPC分类号： H01L21/306 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L21/00

CPC分类号： H01L21/76224 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/31612

摘要： In one aspect, the invention includes a method of forming an insulative plug within a substrate, comprising: a) forming a masking layer over the substrate, the masking layer having an opening extending therethrough to expose a portion of the underlying substrate; b) etching the exposed portion of the underlying substrate to form an opening extending into the substrate; c) forming an insulative material within the opening in the substrate, the insulative material within the opening forming an insulative plug within the substrate; d) after forming the insulative material within the opening, removing the masking layer; and e) after removing the masking layer, removing a portion of the substrate to lower an upper surface of the substrate relative to the insulative plug.

摘要翻译： 在一个方面，本发明包括一种在衬底内形成绝缘插塞的方法，包括：a）在衬底上形成掩模层，掩模层具有穿过其中的开口以露出下面衬底的一部分; b）蚀刻下面的衬底的暴露部分以形成延伸到衬底中的开口; c）在所述基板的开口内形成绝缘材料，所述开口内的所述绝缘材料在所述基板内形成绝缘塞; d）在开口内形成绝缘材料之后，去除掩模层; 以及e）在去除掩蔽层之后，去除衬底的一部分以相对于绝缘插头降低衬底的上表面。

公开(公告)号：US6074960A

公开(公告)日：2000-06-13

申请号：US914935

申请日：1997-08-20

申请人： Whonchee Lee ,  Yongjun Jeff Hu

发明人： Whonchee Lee ,  Yongjun Jeff Hu

IPC分类号： C23F1/28 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/302

CPC分类号： C23F1/28 ,  H01L21/32134 ,  H01L21/76895

摘要： An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the metal nitride layer. The regions of cobalt and the second portions of the metal nitride layer are removed with at least one solution including a mineral acid and a peroxide. The mineral acid may be selected from the group including HCl, H.sub.2 SO.sub.4, H.sub.3 PO.sub.4, HNO.sub.3, and dilute HF (preferably the mineral acid is HCl) and the peroxide may be hydrogen peroxide. Further, the removal of the regions of cobalt and the second portions of the metal nitride layer may include a one step process or a two step process. In the one step process, the regions of cobalt and the second portions of the metal nitride layer are removed with a single solution including the mineral acid and the peroxide. In the two step process, the regions of cobalt are removed with a first solution containing a mineral acid and a peroxide and the second portions of the metal nitride layer are removed with a second solution containing a peroxide. An etching composition including a mineral acid and a peroxide, preferably, HCl and hydrogen peroxide, is also described. The etching methods and compositions may be used in forming structures such as word lines, gate electrodes, local interconnects, etc.

公开(公告)号：US6029680A

公开(公告)日：2000-02-29

申请号：US102151

申请日：1998-06-22

申请人： Richard C. Hawthorne ,  Whonchee Lee

发明人： Richard C. Hawthorne ,  Whonchee Lee

IPC分类号： C23C16/02 ,  H01L21/306 ,  B05D3/00

CPC分类号： H01L21/02049 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0236

摘要： Disclosed is a process for cleaning silicon surfaces of native oxide films. The process utilizes fluorine containing cleaning materials such as anhydrous hydrofluoric acid to clean the oxide from the surface. A fluorine containing particulate matter which forms on the surface as a result of the fluorine containing cleaning materials is then removed by heating the surface to a high temperature. The process is conducted in a non-oxidizing ambient and is preferably conducted in a cluster tool so that the heating step can take place in the same chamber of the cluster tool as later metal deposition step.

摘要翻译： 公开了一种清洁自然氧化膜的硅表面的方法。 该方法利用含氟清洗材料如无水氢氟酸从表面清洗氧化物。 作为含氟清洗材料的结果，在表面上形成的含氟颗粒物质然后通过将表面加热到高温来除去。 该方法在非氧化环境中进行，并且优选在簇工具中进行，使得加热步骤可以在随后的金属沉积步骤中在簇工具的相同室中进行。