摘要:
A heat exchanger and a fin of the same are provided. The heat exchanger includes a tube, a plurality of fins, a slit section, and a condensed water guide. The tube is arranged in at least a front row and a rear row with respect to a direction of airflow. The plurality of fins is installed with the tube passing therethrough. The slit section is formed on the fins and includes a plurality of slits. The condensed water guide is formed between at least the front row and the rear row, for guiding a draining of condensed water that is generated on a surface of the tube. A fin of the heat exchanger includes a plurality of tube insert holes, a slit section, and a condensed water guide. A refrigerant tube is inserted in the plurality of tube insert holes. The slit section includes a plurality of slits formed around the tube insert holes. The condensed water guide is formed at a rear side of one of the slits, and guides a draining of condensed water generated in a heat exchange process between refrigerant and air.
摘要:
Disclosed are a flash memory device having a silicon-oxide-nitride-oxide-silicon (SONOS) structure and a method of manufacturing the same. The flash memory device includes source and drain diffusion regions separated from each other on opposite sides of a trench in an active region of a semiconductor substrate, a control gate inside the trench and protruding upward from the substrate, a charge storage layer between the control gate and an inner wall of the trench, and a pair of insulating spacers formed on opposite sidewalls of the control gate with the charge storage layer therebetween. Here, the charge storage layer has an oxide-nitride-oxide (ONO) structure. Further, the depth of the trench from the surface of the substrate is greater than that of each of the source and drain diffusion regions.
摘要:
A mobile communication terminal is provided that includes a body, a first multi-input unit and a second multi-input unit installed at opposite sides of the body, a first inner display screen and a second inner display screen that display predetermined menus and a controller configured to control the first multi-input unit to move and execute the menu displayed on the first inner display screen and control the second multi-input unit to move and execute the menu displayed on the second inner display screen.
摘要:
The present invention relates to an immunological formulation and a diagnostic kit for cardiac disease using human mitochondrial adenylate kinase isozymes. The present invention provides an immunological formulation and a diagnostic kit for cardiac disease, which are featured by using mitochondrial adenylate kinase isozymes which exist in a myocardiac cell among muscle cells, but not in a skeletal muscular cell, as a diagnostic marker for cardiac disease and which enable more correct and easy diagnosis of cardiac disease.
摘要:
The present invention relates to a noninvasive medical pulsimeter sensor using magnetic thin films. By forming a pulse-sensing part array with magnetic sensors such as GMR devices, MTJ devices and the likes, over the skin-contacting part which consists of a magnetic material, the present invention increases the integrity of sensors, minimizes the time for searching the pulse and it is applicable widely to portable pulsimeters and the likes.
摘要:
A laser induced thermal imaging apparatus for imaging an imaging layer of a donor film on an acceptor substrate. The laser induced thermal imaging apparatus includes: a substrate stage having an electromagnet, and adapted to receive an acceptor substrate having a pixel area of the organic light emitting device and a donor film including the organic light emitting layer to be imaged on the pixel area; a laser oscillator for irradiating a laser on the donor film; a contact frame adapted to be located between the substrate stage and the laser oscillator and including an opening portion of a pattern corresponding to a part to be imaged of the donor film and a permanent magnet for forming a magnetic force with the substrate stage; and a contact frame moving mechanism for moving the contact frame toward the substrate stage.
摘要:
Provided are a catalyst composition comprising a bidentate ligand, a monodentate ligand, and a transition metal catalyst and a process of hydroformylation of olefins, comprising reacting the olefin compound with gas mixture of hydrogen and carbon monoxide with stirring at an elevated pressure and temperature in the presence of the catalyst composition to produce aldehyde. The present catalytic compositions show high catalytic activity, high normal-to-iso aldehyde selectivity, and high stability.
摘要:
Disclosed are a method for manufacturing a catalyst-coated membrane, the catalyst-coated membrane manufactured by the method, and a fuel cell including the catalyst-coated membrane manufactured by the method. The method includes the steps of: (a) providing a mask including a masking film layer and a first adhesive layer laminated on the masking film layer, and having patterns in which portions corresponding to the portions of an electrolyte membrane to be coated with catalyst are removed; (b) attaching the mask on one surface or both surfaces of the electrolyte membrane; (c) coating catalyst ink on the electrolyte membrane through the patterns of the mask so as to form a catalyst layer; and (d) removing the masking film layer and the first adhesive layer.
摘要:
Disclosed herein is a volatile negative differential resistance device using metal nanoparticles, the device includes an organic layer disposed between two metal electrodes, in which the organic layer includes uniformly dispersed metal nanoparticles having a diameter of about 10 nm or less in an organic material. The device of this invention exhibits a volatile negative differential resistance phenomenon at room temperature upon application of a voltage and is thus suitable for use in various switching devices and logic devices, with excellent reproducibility and simple inexpensive processing.
摘要:
The present invention discloses an improved DRAM of semiconductor device and method for manufacturing the same wherein an ONO (oxide-nitride-oxide) structure for trapping electrons or holes used in a non-volatile memory is employed in a gate insulating film of the DRAM to reduce impurity concentrations of a channel region and a well region.