摘要:
The authenticity of a security document, such as a bank note, is verified by use of a security feature arranged in or on the document, which security feature comprises an antenna arranged to receive EM-radiation from an external energy source; a rectifier arranged to receive electric energy from the antenna and convert it into a rectified current; and an electrochromic display arranged to alter its electrochromic state in response to said rectified current. Hence, a security feature able alter its appearance in response to EM-radiation is provided, which comprises a display that can be given a large variety of two dimensional shapes.
摘要:
Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).
摘要:
One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.
摘要:
A touch control arrangement is arranged for a container having a foldable cover being folded between an opened position and a closed position via an actuation unit. The touch control arrangement includes a power source and a touch actuator electrically linked to the power source, wherein the touch actuator is located out of the storage cavity of the container body and is arranged in such a manner that when the touch actuator is activated by a presence of a touch, the actuation unit is actuated to move the foldable cover from the closed position to the opened position.
摘要:
A method, system and device for transferring rights adapted to be associated with items from a rights supplier to a rights consumer, including obtaining a set of rights associated with an item, the set of rights including meta-rights specifying derivable rights that can be derived from the meta-; determining whether the rights consumer is entitled to the derivable rights specified by the meta-rights; and deriving at least one right from the derivable rights, if the rights consumer is entitled to the derivable rights specified by the meta-rights, wherein the derived right includes at least one state variable based on the set of rights and used for determining a state of the derived right.
摘要:
The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interface prior to source/drain anneal. In a second embodiment the gate material is amorphous as deposited and processing temperatures are kept below the gate material crystallization temperature until stress enhancement processing has been completed. The amorphous gate material deforms during high temperature anneal and converts from an amorphous to a polycrystalline phase allowing more stress to be transmitted into the channel region. This enhances carrier mobility and improves transistor drive current.
摘要:
The present invention relates to a method for bridging traffic in analogue channel into digital channel using Asymmetrical Digital Subscriber Line, said method comprises: step of PSTN network connecting, in which caller and callee ADSLs establish PSTN network connection using PSTN signaling in the analogue channel; step of discovering Internet call, in which the caller ADSL sends Internet call setup message to Internet call server, the caller ADSL and the callee ADSL make Internet call discovery procedure on the Internet and determine successful Internet call discovery; step of setting up Internet connection, in which the caller and callee ADSLs set up Internet connection in the digital channel by means of the successful Internet call discovery; step of bridging the PSTN network connection to the Internet, in which the caller and the callee ADSLs bridge the PSTN network connection to the Internet via the Internet connection which has been set up, and release the analogue channel. The invention further relates a modem and a Internet call server used in the method.
摘要:
A system and method for enforcing rights expressions, include specifying a repository rights expression indicating a manner of use of an item at a repository; and associating the repository rights expression with the repository. In a further embodiment, the system includes one or more repositories having associated therewith rights expressions further indicating a condition of use of the item at the repository. In a further embodiment, a repository for use in the system, includes a processor module configured to process the rights expression associated with the repository; and a determination module configured to determine based on the rights expression associated with the repository what action the repository is to take when the repository processes or receives a request for the item. The manner of use or condition of use indicates what action the repository is to take when the repository processes or receives a request for the item.
摘要:
Disclosed are an object detection method and an object detection device. The object detection method comprises a step of obtaining plural detection results of a current frame according to plural object detection methods; a step of setting initial probabilities of the plural detection results of the current frame; a step of calculating a movement frequency distribution diagram representing movement frequencies of respective pixels in the current frame; a step of obtaining detection results of a previous frame; a step of updating the probabilities of the plural detection results of the current frame; and a step of determining a final list of detected objects based on the updated probabilities of the plural detection results of the current frame.
摘要:
The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interface prior to source/drain anneal. In a second embodiment the gate material is amorphous as deposited and processing temperatures are kept below the gate material crystallization temperature until stress enhancement processing has been completed. The amorphous gate material deforms during high temperature anneal and converts from an amorphous to a polycrystalline phase allowing more stress to be transmitted into the channel region. This enhances carrier mobility and improves transistor drive current.