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198 条记录 (耗时 0.022 秒)

    Non-volatile multi-bit memory with programmable capacitance
    102.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 有权
    带可编程电容的非易失性多位存储器

    公开(公告)号：US07786463B2

    公开(公告)日：2010-08-31

    申请号：US12123685

    申请日：2008-05-20

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。

    MAGNETIC RANDOM ACCESS MEMORY (MRAM) UTILIZING MAGNETIC FLIP-FLOP STRUCTURES
    103.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY (MRAM) UTILIZING MAGNETIC FLIP-FLOP STRUCTURES 有权
    磁性随机存取存储器（MRAM）利用磁性FLIP-FLOP结构

    公开(公告)号：US20100085805A1

    公开(公告)日：2010-04-08

    申请号：US12415257

    申请日：2009-03-31

    申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

    IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C8/00

    CPC分类号： H01L27/224 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/08

    摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.

    摘要翻译： 包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个 稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得 该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。 还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

    MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS
    105.
    发明申请
    MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS 有权
    具有独立阅读和写入功能的磁记录

    公开(公告)号：US20100032778A1

    公开(公告)日：2010-02-11

    申请号：US12326186

    申请日：2008-12-02

    申请人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    发明人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    IPC分类号： H01L43/02 ,  G11C11/16

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

    摘要翻译： 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。

    Non-volatile multi-bit memory with programmable capacitance
    108.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 失效
    具有可编程电容的非易失性多位存储器

    公开(公告)号：US08766230B2

    公开(公告)日：2014-07-01

    申请号：US12857717

    申请日：2010-08-17

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。 栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。 固体电解质电池具有在至少两个状态之间可控制的电容。 栅极接触层电耦合到电压源。 第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。

    Magnetic memory with separate read and write paths
    109.
    发明授权
    Magnetic memory with separate read and write paths 失效
    具有独立读写路径的磁记忆体

    公开(公告)号：US08520432B2

    公开(公告)日：2013-08-27

    申请号：US12974699

    申请日：2010-12-21

    申请人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    发明人： Yong Lu ,  Hongyue Liu ,  Zheng Gao ,  Insik Jin ,  Dimitar V. Dimitrov

    IPC分类号： G11C11/14

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

    摘要翻译： 公开了具有分离的读和写路径的磁存储器。 磁存储器单元包括具有第一磁化取向的第一端部，具有第二磁化取向的相对的第二端部和第一端部与第二端部之间的中间部分的铁磁条，所述中间部分具有 自由磁化方向。 第一磁化取向与第二磁化取向相反。 隧道势垒将磁性参考层与形成磁性隧道结的中间部分分开。 位线电耦合到第二端部。 源极线电耦合到第一端部，并且读取线电耦合到磁性隧道结。