Logic cell for programmable gate array

    公开(公告)号:US11671099B2

    公开(公告)日:2023-06-06

    申请号:US17529522

    申请日:2021-11-18

    CPC classification number: H03K19/17728 H03K19/17736 H03K19/21

    Abstract: A logic cell for a programmable logic integrated circuit apparatus includes a K-input lookup table (LUT) circuit having a primary output Y, wherein Y is any function of K inputs, and at least one additional output (F). A carry circuit receives the outputs of the LUT and a carry-in input CI. The carry circuit generates a sum output S and a carry-out output CO. The carry circuit can be configured to provide S=CI and select CO from the set {0, 1, F}. The carry circuit can alternatively be configured to provide S=EXOR(Y, CI) and select CO from the set {0, 1, F}. The carry circuit can alternatively be configured to provide S=EXOR(Y, CI) and CO=CI if Y=q or to select CO from the set {0, 1, F} if Y≠q, where q is a pre-determined value (e.g., such as 0 or 1).

    Memory address protection
    103.
    发明授权

    公开(公告)号:US11663076B2

    公开(公告)日:2023-05-30

    申请号:US17825352

    申请日:2022-05-26

    CPC classification number: G06F11/1048 G06F11/1044

    Abstract: A method for memory protection includes receiving a burst-write instruction that includes data and a burst-write address. The data are segmented into a plurality of data blocks. One or more bits of the burst-write address, or a hash of the burst-write address are concatenated to respective data blocks to obtain data-and-write-address-bit (DWAB) segments. A SECDED ECC is executed on respective DWAB segments to generate a corresponding plurality of sets of parity bits (DWAB-PB). Respective DWAB-PB are concatenated to the corresponding data block to generate corresponding forward-error-correction (FEC) blocks, none of the FEC blocks including the burst-write address or the hash of the burst-write address. A burst-write command and a respective portion of a respective FEC block is sent to respective memory devices during a plurality of beats until all of the beats of the burst-write have been sent.

    Method and apparatus for carrying constant bit rate (CBR) client signals

    公开(公告)号:US20230163942A1

    公开(公告)日:2023-05-25

    申请号:US17885194

    申请日:2022-08-10

    CPC classification number: H04L7/04 H04J3/0658 H04L2012/5674

    Abstract: A method and apparatus in which a data stream generated by a previous network node, a cumulative phase offset report (CPOR) and a client rate report (CRR) are received. A counter accumulating a PHY-scaled stream clock (IPSCk) is sampled at a nominal sampling period (Tps) to obtain a cumulative PHY-scaled count (CPSC). A PHY-scaled stream phase offset (PSPO) is calculated that indicates phase difference between a PHY-scaled stream nominal bit count (LPSD) and an incoming PHY-scaled count delta (IPSD), where IPSD indicates CPSC increment between successive CPSC samples. The data stream is demultiplexed to obtain CBR carrier streams that include a previous network node CPOR (CPOR-P) and a previous network node CPO (CPO-P). A CPO is calculated that is a function of CPO-P and the PSPO. CPO-P is replaced with the calculated CPO. The CBR carrier streams are multiplexed into intermediate-network-node data streams that are transmitted from the intermediate-network-node.

    High resolution angular inductive sensor and associated method of use

    公开(公告)号:US11598654B2

    公开(公告)日:2023-03-07

    申请号:US17359694

    申请日:2021-06-28

    Inventor: Ganesh Shaga

    Abstract: An angular position sensor comprising two annular sensors, one annular sensor for generating a coarse resolution time varying signal in the presence of a rotatable inductive coupling element and the other annular sensor for generating a fine resolution time varying signal in the presence of the rotatable inductive coupling element. The rotatable inductive coupling element comprising a first annular portion comprising at least one annular conductive sector and at least one annular non-conductive sector and a second annular portion comprising at least one annular conductive sectors and at least one annular non-conductive sector, wherein the number of annular conductive sectors of the first annular portion and the second annular portion are different. In particular, the annular conductive sectors of the annular portions may comprise 50% or 75% of the total area of the annular portions.

    Method and Apparatus for Outlier Management

    公开(公告)号:US20220383970A1

    公开(公告)日:2022-12-01

    申请号:US17506735

    申请日:2021-10-21

    Abstract: A method for outlier management at a flash controller includes testing a flash memory device to identify one or more outlier blocks of the flash memory device. Hyperparameters for a DNN are loaded into a training circuit of the flash controller. Test reads of the one or more outlier blocks are performed and a number of errors in the test reads is identified. The DNN is trained using a mini-batch training process and using the identified number of errors in the test reads and is tested to determine whether the trained DNN meets a training error threshold. The performing, the identifying, the training and the testing are repeated until the trained DNN meets the training error threshold to identify parameters of an outlier-block DNN. A neural network operation is performed using the identified parameters to predict a set of TVSO values. A read is performed using the set of predicted TVSO values.

    Method and Apparatus for Estimating Signal Related Delays in a PLD Design

    公开(公告)号:US20220382945A1

    公开(公告)日:2022-12-01

    申请号:US17740644

    申请日:2022-05-10

    Abstract: A method and apparatus for estimating signal related delays in a PLD design is disclosed. The PLD design is modeled in relation to one or more stages, each of the stages including a driver and one or more receivers coupled to the driver with a wiring tree. The modeling is based on a selected set of parameters that include: slope related delays associated with the driver; a delay related to a layout of the wiring tree; and a parameter related to a slope transfer from a previous driver input. A predetermined set of values for each of the selected parameters are accessed; the estimated signal related delays are computed for each of the modeled stages; and are written to a computer-readable storage medium.

    Method and Apparatus for Performing a Read of a Flash Memory Using Predicted Retention-and-Read-Disturb-Compensated Threshold Voltage Shift Offset Values

    公开(公告)号:US20220375532A1

    公开(公告)日:2022-11-24

    申请号:US17385857

    申请日:2021-07-26

    Abstract: A method for performing a read of a flash memory includes storing configuration files for a plurality of RRD-compensating RNNs. A current number of PE cycles for a flash memory are identified and TVSO values are identified corresponding to the current number of PE cycles. A current retention time and a current number of read disturbs for the flash memory are identified. The configuration file of the RRD-compensating RNN corresponding to the current number of PE cycles, the current retention time and current number of read disturbs is selected and is loaded into a neural network engine to form an RNN core in the neural network engine. A neural network operation of the RNN core is performed to predict RRD-compensated TVSO values. The input to the neural network operation includes the identified TVSO values. A read of the flash memory is performed using the predicted RRD-compensated TVSO values.

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