公开(公告)号：US20070196945A1

公开(公告)日：2007-08-23

申请号：US11786515

申请日：2007-04-12

Applicant: John Martin

Inventor： John Martin

IPC: H01L21/02

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

公开(公告)号：US20050156260A1

公开(公告)日：2005-07-21

申请号：US11078253

申请日：2005-03-11

Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC: B81B7/00 ,  H01L21/00 ,  H01L27/14 ,  H01L29/82

CPC classification number: B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20040248344A1

公开(公告)日：2004-12-09

申请号：US10454867

申请日：2003-06-04

Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC: H01L021/44

CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US06808745B2

公开(公告)日：2004-10-26

申请号：US10225846

申请日：2002-08-22

Applicant: Zhihao Yang

Inventor： Zhihao Yang

IPC: C23C1600

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device.

Abstract translation: 一种通过以下步骤涂覆具有硅烷偶联剂的微机电系统装置的方法：a）将硅烷偶联剂与低挥发性基质材料混合在涂料源材料容器中; b）将微机电系统装置放置在与涂料源材料容器相连的真空沉积室中; c）将真空沉积室泵送至预定压力; 并且将真空沉积室的压力保持一段时间，以便在微机电系统装置的表面上化学气相沉积硅烷偶联剂。

公开(公告)号：US20040012061A1

公开(公告)日：2004-01-22

申请号：US10453933

申请日：2003-06-04

Inventor： Jason S. Reid ,  Nungavram S. Viswanathan

IPC: H01L021/00 ,  H01L029/82

CPC classification number: C09D4/00 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C08G77/00 ,  C08G77/04 ,  C08G77/24

Abstract: A micro-electromechanical device is formed on a substrate. The device has sliding, abrading or impacting surfaces. At least one of these surfaces is covered with an anti-stiction material. The anti-stiction material is provided from a slicon compound precursor (e.g. silane, silanol) or multiple silicon compound precursors. Preferably the precursor(s) is fluorinatednullmore preferably perfluorinated, and is deposited with a solvent as a low molecular weight oligomer or in monomeric form. Examples include silanes (fluorinated or not) with aromatic or polycyclic ring sturctures, and/or silanes (fluorinated or not) having alkenyl, alkynyl, epoxy or acrylate groups. Mixtures either or both of these groups with alkyl chain silanes (preferably fluorinated) are also contemplated.

Abstract translation: 在基板上形成微机电装置。 该装置具有滑动，研磨或冲击表面。 这些表面中的至少一个被抗静电材料覆盖。 抗粘性材料由Slico化合物前体（例如硅烷，硅烷醇）或多种硅化合物前体提供。 优选地，前体被氟化 - 更优选全氟化，并且以溶剂作为低分子量低聚物或以单体形式沉积。 实例包括具有芳族或多环结构的硅烷（氟化或非氟化），和/或具有烯基，炔基，环氧基或丙烯酸酯基团的硅烷（氟化或非氟化）。 这些基团中的一个或两个与烷基链硅烷（优选氟化）混合也是可以预料的。

公开(公告)号：US06674140B2

公开(公告)日：2004-01-06

申请号：US09771872

申请日：2001-01-29

Applicant: John R. Martin

Inventor： John R. Martin

IPC: H01L2984

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明公开了一种在微加工结构上形成持久的抗静电表面的方法，同时它们仍然是晶片形式（即，在它们被分离成用于组装成包装的分立装置之前）。 该方法涉及材料的气相沉积以产生低粘度表面。 它还公开了有效赋予芯片抗静电性能的化学品。 这些包括聚苯基硅氧烷，硅烷醇封端的苯基硅氧烷和类似的材料。

公开(公告)号：US06656368B2

公开(公告)日：2003-12-02

申请号：US09445374

申请日：2000-03-02

Applicant: Martin Schoefthaler ,  Peter Hein ,  Helmut Skapa ,  Horst Muenzel

Inventor： Martin Schoefthaler ,  Peter Hein ,  Helmut Skapa ,  Horst Muenzel

IPC: H01L2100

CPC classification number: G01P15/0802 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  G01P1/023

Abstract: A method for manufacturing micromechanical components, and a micromechanical component, in which a movable element is produced on a sacrificial layer. In a subsequent step the sacrificial layer beneath the movable element is removed so that the movable element becomes movable. After removal of the sacrificial layer, a protective layer is deposited on a surface of the movable element. Silicon oxide and/or silicon nitride is used for the protective layer.

Abstract translation: 一种用于制造微机械部件的方法，以及微机械部件，其中在牺牲层上制造可移动元件。 在随后的步骤中，去除可移动元件下面的牺牲层，使得可移动元件变得可移动。 在去除牺牲层之后，在可移动元件的表面上沉积保护层。 氧化硅和/或氮化硅用于保护层。