公开(公告)号：US09178030B2

公开(公告)日：2015-11-03

申请号：US13616964

申请日：2012-09-14

Applicant: Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

Inventor： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC: G02F1/136 ,  H01L29/45 ,  G02F1/1368 ,  G06F3/042 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1333

CPC classification number: H01L29/45 ,  G02F1/13338 ,  G02F1/1368 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.

Abstract translation: 提供薄膜晶体管。 晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。 栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

公开(公告)号：US20130208204A1

公开(公告)日：2013-08-15

申请号：US13616964

申请日：2012-09-14

Applicant: Sang-hun JEON ,  I-hun SONG ,  Chang-jung KIM ,  Seung-eon AHN

Inventor： Sang-hun JEON ,  I-hun SONG ,  Chang-jung KIM ,  Seung-eon AHN

IPC: G02F1/1368 ,  H01L29/786

CPC classification number: H01L29/45 ,  G02F1/13338 ,  G02F1/1368 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.

Abstract translation: 提供薄膜晶体管。 晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。 栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

公开(公告)号：US08507906B2

公开(公告)日：2013-08-13

申请号：US12591909

申请日：2009-12-04

Applicant: Sung-ho Park ,  I-hun Song ,  Wook Lee ,  Sang-wook Kim ,  Sun-il Kim ,  Jae-chul Park

Inventor： Sung-ho Park ,  I-hun Song ,  Wook Lee ,  Sang-wook Kim ,  Sun-il Kim ,  Jae-chul Park

IPC: H01L31/032 ,  H01L21/00

CPC classification number: H01L27/14636 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689

Abstract: Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.

Abstract translation: 提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。 在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。 在这样的CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以减小单位像素的尺寸，并且可以提高像素的灵敏度。

公开(公告)号：US20130168770A1

公开(公告)日：2013-07-04

申请号：US13547200

申请日：2012-07-12

Applicant: Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

Inventor： Sang-hun Jeon ,  Chang-jung Kim ,  I-hun Song

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.

Abstract translation: 高压氧化物晶体管包括基板; 设置在所述基板上的沟道层; 设置在所述基板上以对应于所述沟道层的栅电极; 源极，与所述沟道层的第一侧接触; 以及与沟道层的第二面接触的漏极，其中所述沟道层包括多个氧化物层，并且所述多个氧化物层中没有一个包括硅。 栅电极可以设置在沟道层上或下面。 否则，栅极电极可以分别设置在沟道层上和下面。

公开(公告)号：US08455933B2

公开(公告)日：2013-06-04

申请号：US12801392

申请日：2010-06-07

Applicant: Sung-ho Park ,  I-hun Song ,  Ji-hyun Hur ,  Sang-hun Jeon

Inventor： Sung-ho Park ,  I-hun Song ,  Ji-hyun Hur ,  Sang-hun Jeon

IPC: H01L31/062

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L29/41733

Abstract: An image sensor according to example embodiments may include a plurality of light-sensitive transparent oxide semiconductor layers as light-sensing layers. The light-sensing layers may be stacked in one unit pixel region.

Abstract translation: 根据示例性实施例的图像传感器可以包括多个感光透明氧化物半导体层作为感光层。 光感测层可以堆叠在一个单位像素区域中。

公开(公告)号：US08373237B2

公开(公告)日：2013-02-12

申请号：US12458251

申请日：2009-07-07

Applicant: Sung-ho Park ,  Chang-jung Kim ,  I-hun Song ,  Sang-wook Kim ,  Jae-chul Park

Inventor： Sung-ho Park ,  Chang-jung Kim ,  I-hun Song ,  Sang-wook Kim ,  Jae-chul Park

IPC: H01L27/088

CPC classification number: H01L29/785 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/66795 ,  H01L29/7869

Abstract: Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.

Abstract translation: 示例性实施例提供晶体管及其制造方法。 晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。 多个晶体管可以沿垂直于衬底的方向堆叠。 多个晶体管中的至少一些可以彼此连接。

公开(公告)号：US20130027326A1

公开(公告)日：2013-01-31

申请号：US13465249

申请日：2012-05-07

Applicant: Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

Inventor： Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

IPC: G06F3/041 ,  G01J1/42

CPC classification number: G06F3/0412 ,  G06F3/042

Abstract: A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.

Abstract translation: 一种光感测装置，其中光感测像素中的光传感器晶体管由用于感测光的氧化物半导体晶体管形成，驱动光感测装置的方法以及包括光感测装置的光学触摸屏装置 。 感光装置包括具有排列成行和列的多个感光像素的光感测像素阵列，以及沿行方向排列并分别向光感测提供栅极电压的多条栅极线 像素。 每个感光像素包括用于感测光的光传感器晶体管和用于输出来自光传感器晶体管的光感测信号的开关晶体管，以及布置在任意行中的感光像素的光传感器晶体管的栅极 连接到布置在任意行之前或之后的行中的栅极线。

公开(公告)号：US20120280939A1

公开(公告)日：2012-11-08

申请号：US13422384

申请日：2012-03-16

Applicant: Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

Inventor： Seung-eon Ahn ,  I-hun Song ,  Sang-hun Jeon ,  Young Kim

IPC: G06F3/042

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042

Abstract: An optical touch screen apparatus in which an oxide semiconductor transistor is used as a light sensing device, and a method of driving the optical touch screen apparatus. The optical touch screen apparatus includes an array including a plurality of light sensing pixels for sensing incident light, a gate driver for providing each of the light sensing pixels with a gate voltage and a reset signal and a signal output unit for receiving a light sensing signal from each of the plurality of light sensing pixels to output a data signal. The gate driver includes a plurality of gate lines that provide a gate voltage to each of the light sensing pixels and at least one reset line that provides a reset signal to each of the light sensing pixels and is electrically connected to the plurality of light sensing pixels.

Abstract translation: 使用氧化物半导体晶体管作为光感测装置的光学触摸屏装置以及驱动光学触摸屏装置的方法。 所述光学触摸屏装置包括：包括用于感测入射光的多个感光像素的阵列;用于为每个所述感光像素提供栅极电压和复位信号的栅极驱动器;以及信号输出单元，用于接收光线感测信号 从多个感光像素中的每一个传输数据信号。 栅极驱动器包括多个栅极线，其向每个光感测像素提供栅极电压，以及至少一个复位线，其向每个光感测像素提供复位信号，并且电连接到多个光感测像素 。

公开(公告)号：US08139387B2

公开(公告)日：2012-03-20

申请号：US12662989

申请日：2010-05-14

Applicant: Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

Inventor： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC: G11C5/06

CPC classification number: G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract translation: 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20110230021A1

公开(公告)日：2011-09-22

申请号：US13067306

申请日：2011-05-24

Applicant: Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

Inventor： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

IPC: H01L21/336

CPC classification number: H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

Abstract: Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.