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11 条记录 (耗时 0.026 秒)

    LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES
    1.
    发明申请
    LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES 有权
    感光装置，驱动感光装置的方法，以及包括感光装置的光触控屏幕装置

    公开(公告)号：US20120327032A1

    公开(公告)日：2012-12-27

    申请号：US13435666

    申请日：2012-03-30

    申请人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    发明人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    IPC分类号： G06F3/042 ,  H01L31/113 ,  H01L31/0264

    CPC分类号： H01L27/14609 ,  G06F3/042 ,  G06F2203/04103

    摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

    摘要翻译： 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。 在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

    Light-Sensing Apparatus And Method Of Driving The Same
    2.
    发明申请
    Light-Sensing Apparatus And Method Of Driving The Same 有权
    感光装置及其驱动方法

    公开(公告)号：US20120267513A1

    公开(公告)日：2012-10-25

    申请号：US13358862

    申请日：2012-01-26

    申请人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    发明人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    IPC分类号： H01L27/144 ,  H01L31/00

    CPC分类号： H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

    摘要： According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.

    摘要翻译： 根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。 每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜 开关晶体管。 光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。 第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。 信号输出单元可以被配置为从每个感光像素接收光感测信号并输出​​数据信号。

    THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME 有权
    薄膜晶体管和使用其的显示面板

    公开(公告)号：US20130208204A1

    公开(公告)日：2013-08-15

    申请号：US13616964

    申请日：2012-09-14

    申请人： Sang-hun JEON ,  I-hun SONG ,  Chang-jung KIM ,  Seung-eon AHN

    发明人： Sang-hun JEON ,  I-hun SONG ,  Chang-jung KIM ,  Seung-eon AHN

    IPC分类号： G02F1/1368 ,  H01L29/786

    CPC分类号： H01L29/45 ,  G02F1/13338 ,  G02F1/1368 ,  G06F3/0421 ,  G06F2203/04103 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/7869

    摘要： A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.

    摘要翻译： 提供薄膜晶体管。 晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。 栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

    Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof
    4.
    发明申请
    Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof 有权
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US20130009145A1

    公开(公告)日：2013-01-10

    申请号：US13404136

    申请日：2012-02-24

    申请人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    发明人： Sang-hun JEON ,  I-hun SONG ,  Seung-eon AHN ,  Chang-jung KIM ,  Young KIM

    IPC分类号： H01L29/12 ,  H01L21/336

    CPC分类号： H01L27/14692 ,  H01L27/14612

    摘要： A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.

    摘要翻译： 晶体管可以包括具有多个氧化物半导体层的有源层和设置在其间的绝缘层。 绝缘层可以包括相对于多个氧化物半导体层中的至少一个具有较高蚀刻选择性的材料。 电子设备可以包括连接到第一晶体管的第一晶体管和第二晶体管。 第二晶体管可以包括具有与包括在第一晶体管中的有源层的结构不同的结构的有源层。 第二晶体管的有源层可以具有与构成第一晶体管的有源层的多个氧化物半导体层中的一个相同的结构。

    DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有大面积检测器及其制造方法

    公开(公告)号：US20130175431A1

    公开(公告)日：2013-07-11

    申请号：US13568593

    申请日：2012-08-07

    申请人： Dae-kun YOON ,  Young KIM ,  Jae-chul PARK ,  Sang-wook HAN ,  Sun-il KIM ,  Chang-jung KIM ,  Jun-su LEE

    发明人： Dae-kun YOON ,  Young KIM ,  Jae-chul PARK ,  Sang-wook HAN ,  Sun-il KIM ,  Chang-jung KIM ,  Jun-su LEE

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14603

    摘要： A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel.

    摘要翻译： 检测器包括基板; 两个第一区域，每个第一区域具有直线形状，并且两个第一区域在基板上彼此分离并且平行排列; 以及设置在所述两个第一区域之间并且包括多个像素的像素区域，所述像素区域包括垂直于所述两个第一区域的多个第二区域，所述两个第一区域中的每一个包括外围电路部分， 第二区域包括驱动器线，并且所述多个第二区域中的每一个的宽度等于或小于单个像素的宽度。