公开(公告)号：US20240415012A1

公开(公告)日：2024-12-12

申请号：US18690357

申请日：2022-09-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Kazuya SUGIMOTO ,  Akio YAMASHITA ,  Yasuhiro NIIKURA ,  Sachiko KAWAKAMI ,  Anna TADA

IPC: H10K85/60 ,  C07C211/61 ,  H10K39/00

Abstract: A novel and highly convenient, useful, or reliable material for a photoelectric conversion device is provided. The photoelectric conversion device includes a first electrode, a second electrode, a first layer, a second layer, and a third layer. The first layer is held between the first electrode and the second electrode; the second layer is held between the second electrode and the first layer; the third layer is held between the second electrode and the second layer; and the third layer has higher electron mobility than the first layer. The material is used in the second layer, the material contains an anthracene skeleton, and the anthracene skeleton is bonded to a diarylamino group, a diheteroarylamino group, or an arylheteroarylamino group.

公开(公告)号：US20240413250A1

公开(公告)日：2024-12-12

申请号：US18736777

申请日：2024-06-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidekazu Miyairi ,  Takeshi Osada ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/477 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

公开(公告)号：US12167665B2

公开(公告)日：2024-12-10

申请号：US18534949

申请日：2023-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Kensuke Yoshizumi

IPC: H10K59/40 ,  G02F1/1333 ,  G06F3/041 ,  G06F3/044 ,  H01L21/683 ,  H01L21/82 ,  H01L27/12 ,  H01L27/15 ,  H01L29/786 ,  H10K50/842 ,  H10K59/12 ,  H10K59/38 ,  H10K59/60 ,  H10K71/80 ,  G02F1/136 ,  G02F1/1368 ,  H10K102/00

Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

公开(公告)号：US12167660B2

公开(公告)日：2024-12-10

申请号：US18110924

申请日：2023-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao Ikeda ,  Kensuke Yoshizumi ,  Tomoya Aoyama

IPC: H10K50/84 ,  H10K50/844 ,  H10K50/85 ,  H10K50/852 ,  H10K59/30 ,  G02F1/1335 ,  G09G3/3283 ,  G09G3/3291 ,  H01L27/146 ,  H10K50/80 ,  H10K50/842 ,  H10K59/12 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/35 ,  H10K59/38 ,  H10K59/40 ,  H10K102/00

Abstract: A display device which exhibits light with high color purity is provided. A display device with low power consumption is provided. An embodiment is a display device which includes a first pixel electrode, a second pixel electrode, a light-emitting layer, a common electrode, a first protective layer, and a semi-transmissive layer. The light-emitting layer includes a first region positioned over the first pixel electrode and a second region positioned over the second pixel electrode. The common electrode is positioned over the light-emitting layer. The first protective layer is positioned over the common electrode. The semi-transmissive layer is positioned over the first protective layer. Reflectivity with respect to visible light of the semi-transmissive layer is higher than reflectivity with respect to visible light of the common electrode. The semi-transmissive layer does not overlap with the first region and overlaps with the second region. For example, the semi-transmissive layer may include an opening in a position overlapping with the first region.

公开(公告)号：US20240407192A1

公开(公告)日：2024-12-05

申请号：US18679604

申请日：2024-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kaoru HATANO

IPC: H10K50/844 ,  H10K50/84 ,  H10K50/842 ,  H10K59/12 ,  H10K71/00 ,  H10K77/10 ,  H10K102/00

Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.

公开(公告)号：US20240405308A1

公开(公告)日：2024-12-05

申请号：US18695496

申请日：2022-09-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yuji IWAKI ,  Ryota TAJIMA ,  Shuhei YOSHITOMI

IPC: H01M10/615 ,  B60L58/27 ,  H01M10/44 ,  H01M10/48 ,  H01M10/625 ,  H01M10/63 ,  H01M10/653 ,  H01M50/136 ,  H01M50/213

Abstract: A power storage device that is less likely to be influenced by an ambient temperature is provided. The power storage device capable of being charged and discharged even in a low-temperature environment is provided. A first secondary battery capable of being charged and discharged even at low temperatures and a general second secondary battery are adjacent to each other in the power storage device. The power storage device having such a structure can use, as an internal heat source in a low-temperature environment, heat generated by charge and discharge of the secondary battery capable of being charged and discharged even at low temperatures. Specifically, the power storage device includes the first secondary battery and the second secondary battery adjacent to each other, the first secondary battery has flexibility, and a value of discharge capacity in discharge at −40° C. is higher than or equal to 50% of a value of discharge capacity in discharge at 25° C.

公开(公告)号：US20240402994A1

公开(公告)日：2024-12-05

申请号：US18683540

申请日：2022-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi KATO ,  Tatsuya ONUKI ,  Atsushi MIYAGUCHI ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI

IPC: G06F7/523 ,  G06F7/50 ,  G11C11/405 ,  H10B12/00

Abstract: An electronic device with a novel structure is provided. In an electronic device including a semiconductor device, the semiconductor device includes a CPU, an accelerator, and a memory device. The CPU includes a scan flip-flop circuit and a backup circuit electrically connected to the scan flip-flop circuit. The backup circuit includes a first transistor. The accelerator includes an arithmetic circuit and a data retention circuit electrically connected to the arithmetic circuit. The data retention circuit includes a second transistor. The memory device includes a memory cell including a third transistor. The first transistor to the third transistor each include a semiconductor layer containing a metal oxide in a channel formation region.

公开(公告)号：US12159941B2

公开(公告)日：2024-12-03

申请号：US17770588

申请日：2020-10-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yasuhiro Jinbo ,  Tomosato Kanagawa

IPC: H01L29/786 ,  H01L29/417

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.

公开(公告)号：US12159573B2

公开(公告)日：2024-12-03

申请号：US18036931

申请日：2021-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tatsuya Onuki ,  Hajime Kimura

IPC: G09G3/3208

Abstract: Provided is a display system with high display quality and high resolution. The display system includes a first layer and a display portion. The display portion is positioned in a region overlapping with the first layer. The first layer includes a semiconductor substrate containing silicon as a material, and a plurality of first transistors and a plurality of second transistors whose channel formation regions contain silicon are formed over the semiconductor substrate. The first layer includes a first circuit and a second circuit; the first circuit includes a driver circuit for driving the display portion; and the second circuit includes a memory device, a GPU, and an EL correction circuit. The display portion includes a pixel, and the pixel includes a light-emitting device containing organic EL and is electrically connected to the driver circuit. The memory device has a function of retaining image data; the GPU has a function of decoding the image data read from the memory device; and the EL correction circuit has a function of correcting light emitted from the light-emitting device.

公开(公告)号：US20240395941A1

公开(公告)日：2024-11-28

申请号：US18792762

申请日：2024-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

IPC: H01L29/786 ,  H01L29/00 ,  H01L29/04 ,  H01L29/12 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/772

Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.