公开(公告)号：US20060013273A1

公开(公告)日：2006-01-19

申请号：US11108039

申请日：2005-04-14

Applicant: Vinod Menon ,  Shubhashish Datta ,  Stephen Forrest

Inventor： Vinod Menon ,  Shubhashish Datta ,  Stephen Forrest

IPC: H01S3/13 ,  H01S5/00

CPC classification number: H01S5/026 ,  H01S5/0264 ,  H01S5/06256 ,  H01S5/0654 ,  H01S5/0657 ,  H01S5/0687 ,  H01S5/1014 ,  H01S5/1021 ,  H01S5/1039

Abstract: A monolithic wavelength stabilized system comprises a laser monolithically formed with a waveguide splitter having at least two branches. Non-identical resonators having different wavelengths are operatively coupled to each branch of the splitter and a photodiode is communicatively coupled to receive the output from each non-identical resonator. A control unit receives the photocurrent outputs from the photodiodes, determines based on the photocurrents whether the wavelength of the laser signal is at a desired value, and transmits a feedback signal to the laser to move the laser output toward the desired wavelength. The laser, splitter, resonators, and photodiodes are monolithically formed in a single chip using asymmetric waveguides.

Abstract translation: 单片波长稳定系统包括与具有至少两个分支的波导分离器单片形成的激光器。 具有不同波长的不相同的谐振器可操作地耦合到分离器的每个分支，并且光电二极管通信地耦合以接收来自每个不相同的谐振器的输出。 控制单元接收来自光电二极管的光电流输出，基于光电流确定激光信号的波长是否处于期望值，并将反馈信号发送到激光器以将激光输出朝向期望的波长移动。 激光器，分离器，谐振器和光电二极管使用不对称波导在单个芯片中单片地形成。

公开(公告)号：US20050224905A1

公开(公告)日：2005-10-13

申请号：US10822774

申请日：2004-04-13

Applicant: Stephen Forrest ,  Soichi Uchida ,  Barry Rand ,  Jiangeng Xue

Inventor： Stephen Forrest ,  Soichi Uchida ,  Barry Rand ,  Jiangeng Xue

IPC: H01L21/00 ,  H01L31/06 ,  H01L51/00 ,  H01L51/42

CPC classification number: B82Y10/00 ,  H01L51/0046 ,  H01L51/0078 ,  H01L51/4246 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549

Abstract: A device is provided, having a first electrode, a second electrode, and a photoactive region disposed between the first electrode and the second electrode. The photoactive region includes a first organic layer comprising a mixture of an organic acceptor material and an organic donor material, wherein the first organic layer has a thickness not greater than 0.8 characteristic transport lengths, and a second organic layer in direct contact with the first organic layer, wherein: the second organic layer comprises an unmixed layer of the organic acceptor material or the organic donor material of the first organic layer, and the second organic layer has a thickness not less than about 0.1 optical absorption lengths. Preferably, the first organic layer has a thickness not greater than 0.3 characteristic transport lengths. Preferably, the second organic layer has a thickness of not less than about 0.2 optical absorption lengths. Embodiments of the invention can be capable of power efficiencies of 2% or greater, and preferably 5% or greater.

Abstract translation: 提供一种具有第一电极，第二电极和设置在第一电极和第二电极之间的光活性区的装置。 光活性区域包括包含有机受体材料和有机供体材料的混合物的第一有机层，其中第一有机层具有不大于0.8特征传输长度的厚度，以及与第一有机层直接接触的第二有机层 层，其中：第二有机层包含有机受体材料的未混合层或第一有机层的有机供体材料，第二有机层具有不小于约0.1光学吸收长度的厚度。 优选地，第一有机层具有不大于0.3特征输送长度的厚度。 优选地，第二有机层具有不小于约0.2光学吸收长度的厚度。 本发明的实施例能够实现2％以上，优选5％以上的功率效率。

公开(公告)号：US20050224113A1

公开(公告)日：2005-10-13

申请号：US10910371

申请日：2004-08-04

Applicant: Jiangeng Xue ,  Soichi Uchida ,  Barry Rand ,  Stephen Forrest

Inventor： Jiangeng Xue ,  Soichi Uchida ,  Barry Rand ,  Stephen Forrest

IPC: H01L31/00 ,  H01L31/0256 ,  H01L51/00 ,  H01L51/30 ,  H01L51/42

CPC classification number: H01L51/0072 ,  B82Y10/00 ,  H01L31/0256 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0073 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/4246 ,  H01L51/4253 ,  H01L2251/301 ,  H01L2251/308 ,  Y02E10/549

Abstract: A device is provided, having a first electrode, a second electrode, and a photoactive region disposed between the first electrode and the second electrode. The photoactive region includes a first organic layer comprising a mixture of an organic acceptor material and an organic donor material, wherein the first organic layer has a thickness not greater than 0.8 characteristic charge transport lengths, and a second organic layer in direct contact with the first organic layer, wherein: the second organic layer comprises an unmixed layer of the organic acceptor material or the organic donor material of the first organic layer, and the second organic layer has a thickness not less than about 0.1 optical absorption lengths. Preferably, the first organic layer has a thickness not greater than 0.3 characteristic charge transport lengths. Preferably, the second organic layer has a thickness of not less than about 0.2 optical absorption lengths. Embodiments of the invention can be capable of power efficiencies of 2% or greater, and preferably 5% or greater.

Abstract translation: 提供一种具有第一电极，第二电极和设置在第一电极和第二电极之间的光活性区的装置。 光活性区域包括包含有机受体材料和有机供体材料的混合物的第一有机层，其中第一有机层具有不大于0.8特征电荷输送长度的厚度，以及与第一有机层直接接触的第二有机层 有机层，其中：所述第二有机层包含所述有机受体材料的未混合层或所述第一有机层的有机供体材料，并且所述第二有机层具有不小于约0.1光学吸收长度的厚度。 优选地，第一有机层具有不大于0.3个特征电荷输送长度的厚度。 优选地，第二有机层具有不小于约0.2光学吸收长度的厚度。 本发明的实施例能够实现2％以上，优选5％以上的功率效率。

公开(公告)号：US20050195640A1

公开(公告)日：2005-09-08

申请号：US10998187

申请日：2004-11-26

Applicant: Shawn Smith ,  Stephen Forrest

Inventor： Shawn Smith ,  Stephen Forrest

IPC: G11C13/00 ,  G11C13/02 ,  G11C17/16 ,  H01L20060101 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L51/0587 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C17/16 ,  G11C2213/72 ,  G11C2216/26 ,  H01L27/285 ,  H01L51/0037

Abstract: Embodiments of the present invention are directed to low complexity, efficient, two-component memory elements for use in low-cost, robust, and reliable WORM memories. The memory element of one embodiment is an organic-on-inorganic heterojunction diode comprising an organic-polymer layer joined to a doped, inorganic semiconductor layer. The organic polymer layer serves both as one later of a two-later, semiconductor-based diode, as well as a fuse. Application of a voltage greater than a threshold WRITE voltage for a period of time greater than a threshold time interval for a WRITE-voltage pulse irreversibly and dramatically increases the resistivity of the organic polymer layer. The memory element that represents one embodiment of the present invention is more easily manufactured than previously described, separate-fuse-and-diode memory elements, and has the desirable characteristics of being switchable at lower voltages and with significantly shorter-duration WRITE-voltage pulses than the previously described memory elements.

Abstract translation: 本发明的实施例涉及用于低成本，稳健和可靠的WORM存储器的低复杂度，高效率的双分量存储器元件。 一个实施方案的存储元件是无机异源结二极管，其包含连接到掺杂的无机半导体层的有机聚合物层。 有机聚合物层同时用作两个以后的半导体二极管以及一个保险丝。 施加大于阈值写入电压的电压大于写电压脉冲的阈值时间间隔的时间段不可逆地显着增加有机聚合物层的电阻率。 代表本发明的一个实施例的存储元件比先前描述的更容易制造，分离的熔丝和二极管存储元件，并且具有可在较低电压下切换并具有显着更短持续时间的写电压脉冲的期望特性 比之前描述的存储器元件。

公开(公告)号：US20050185889A1

公开(公告)日：2005-08-25

申请号：US11062095

申请日：2005-02-18

Applicant: Fengnian Xia ,  Stephen Forrest

Inventor： Fengnian Xia ,  Stephen Forrest

IPC: G02B6/122 ,  G02B6/26 ,  G02B6/30 ,  H01S5/30 ,  H01S5/343 ,  H01S5/50

CPC classification number: B82Y20/00 ,  G02B6/1228 ,  G02B6/305 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/305 ,  H01S5/34306 ,  H01S5/34373 ,  H01S5/5009

Abstract: A polarization insensitive semiconductor optical amplifier (SOA) is provided. The SOA includes an active waveguide, a passive waveguide, and a taper coupler for coupling optical energy from the passive waveguide into the active waveguide, wherein the taper coupler has width W varying relative to position along a main axis z of propagation of the SOA in proportion to the minimum value of 1/CTE 01 (z) 1/CTM 01 (z), where CTE 01 (z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse electric polarization as a function of the position z, and CTM 01 (z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse magnetic polarization as a function of the position z.

Abstract translation: 提供了偏振不敏感半导体光放大器（SOA）。 SOA包括有源波导，无源波导和锥形耦合器，用于将来自无源波导的光能耦合到有源波导中，其中锥形耦合器具有相对于沿着SOA的传播主轴线z的位置而变化的宽度W （z）1 / C TM 01（z）的最小值的比例，其中C TE 01（z） ）表示作为位置z的函数的横向电极化的基模和一阶模式之间的能量耦合系数，并且C 1（z）表示 作为位置z的函数的横向磁极化的基本模式和一阶模式。

公开(公告)号：US20050170621A1

公开(公告)日：2005-08-04

申请号：US10979448

申请日：2004-11-03

Applicant: Changsoon Kim ,  Yifang Cao ,  Winston Soboyejo ,  Stephen Forrest

Inventor： Changsoon Kim ,  Yifang Cao ,  Winston Soboyejo ,  Stephen Forrest

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/40 ,  B41M5/20

CPC classification number: H01L51/0022 ,  B33Y10/00 ,  B33Y30/00 ,  H01L51/0004 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/56

Abstract: The invention provides a method of depositing a layer of a conductive material, e.g. metal, metal oxide or electroconductive polymer, from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate after an organic layer has been transferred from a patterned stamp to an organic layer over the substrate. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.

Abstract translation: 本发明提供一种沉积导电材料层的方法，例如， 金属，金属氧化物或导电聚合物，在有机层已经从图案化的印模转移到衬底上的有机层之后，从图案化的印模，优选软的弹性体印模到基底。 图案化的金属或有机层可以用于例如广泛的电子器件中。 本发明的方法特别适用于有机电子元件的纳米尺度图案化。

公开(公告)号：US20050158584A1

公开(公告)日：2005-07-21

申请号：US11061832

申请日：2005-02-18

Applicant: Mark Thompson ,  Yujian You ,  Andrei Shoustikov ,  Scott Sibley ,  Paul Burrows ,  Stephen Forrest

Inventor： Mark Thompson ,  Yujian You ,  Andrei Shoustikov ,  Scott Sibley ,  Paul Burrows ,  Stephen Forrest

IPC: C07D487/22 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H01L51/52 ,  H05B33/28 ,  H05B33/14

CPC classification number: H01L51/0084 ,  C07D487/22 ,  C09K11/06 ,  C09K2211/10 ,  C09K2211/1003 ,  C09K2211/1007 ,  C09K2211/1018 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1074 ,  C09K2211/18 ,  C09K2211/185 ,  C09K2211/186 ,  H01L51/0053 ,  H01L51/0067 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5016 ,  H01L51/5221 ,  H01L51/5234 ,  H01L2251/308 ,  H01L2251/5323 ,  H05B33/14 ,  H05B33/28 ,  Y10S428/917 ,  Y10T428/24942

Abstract: Organic light emitting devices are Disclosed which are comprised of a heterostructure for producing electroluminescence wherein the heterostructure is comprised of an emissive layer containing a phosphorescent dopant compound. For example, the phosphorescent dopant compound may be comprised of platinum octaethylporphine (PtOEP), which is a compound having the chemical structure with the formula:

Abstract translation: 公开了由用于产生电致发光的异质结构组成的有机发光器件，其中异质结构由含有磷光掺杂剂化合物的发射层组成。 例如，磷光掺杂剂化合物可以由具有以下化学结构的化合物的铂八乙基卟吩（PtOEP）组成：

公开(公告)号：US20050109622A1

公开(公告)日：2005-05-26

申请号：US10722740

申请日：2003-11-26

Applicant: Peter Peumans ,  Stephen Forrest

Inventor： Peter Peumans ,  Stephen Forrest

IPC: C25D13/04 ,  C25D13/22 ,  C25D15/00 ,  C25D17/00 ,  G01N27/403 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC classification number: B82Y5/00 ,  B82Y10/00 ,  C25D13/04 ,  C25D13/22 ,  H01L51/0006 ,  H01L51/0093

Abstract: The present invention relates to a method and system for controlling electrodeposition of a deposition entity in which a solution or suspension of the deposition entity is provided between a pair of superposed electrodes at a predetermined concentration. A potential is applied to the electrodes sufficient to cause migration of the deposition entity to one of the electrodes and deposition of a controlled thickness of the deposition entity. The distance between the electrodes and voltage applied can be controlled to provide migration of the deposition entity. The method and system provide controlled immobilization of deposition entities such as proteins, enzymes, light harvesting complexes, DNA, RNA, PNA onto a substrate without loss of function. In one embodiment, the system can be used on a nanoscale. Additionally, devices can be formed by the method of the present invention.

Abstract translation: 本发明涉及一种用于控制沉积实体的电沉积的方法和系统，其中沉积实体的溶液或悬浮液以预定浓度提供在一对重叠电极之间。 电极被施加到足以使沉积实体迁移到电极之一并沉积沉积实体受控厚度的电极。 可以控制电极之间的距离和施加的电压以提供沉积实体的迁移。 该方法和系统提供诸如蛋白质，酶，光收集复合物，DNA，RNA，PNA等沉积实体的受控固定，而不损失功能。 在一个实施例中，该系统可以在纳米尺度上使用。 另外，可以通过本发明的方法形成装置。

公开(公告)号：US20050008897A1

公开(公告)日：2005-01-13

申请号：US10913211

申请日：2004-08-06

Applicant: Mark Thompson ,  Yujian You ,  Andrei Shoustikov ,  Scott Sibley ,  Paul Burrows ,  Stephen Forrest

Inventor： Mark Thompson ,  Yujian You ,  Andrei Shoustikov ,  Scott Sibley ,  Paul Burrows ,  Stephen Forrest

IPC: C07D487/22 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H01L51/52 ,  H05B33/28 ,  H05B33/14

CPC classification number: H01L51/0084 ,  C07D487/22 ,  C09K11/06 ,  C09K2211/10 ,  C09K2211/1003 ,  C09K2211/1007 ,  C09K2211/1018 ,  C09K2211/1029 ,  C09K2211/1033 ,  C09K2211/1074 ,  C09K2211/18 ,  C09K2211/185 ,  C09K2211/186 ,  H01L51/0053 ,  H01L51/0067 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5016 ,  H01L51/5221 ,  H01L51/5234 ,  H01L2251/308 ,  H01L2251/5323 ,  H05B33/14 ,  H05B33/28 ,  Y10S428/917 ,  Y10T428/24942

Abstract: Organic light emitting devices are disclosed which are comprised of a heterostructure for producing electroluminescence wherein the heterostructure is comprised of an emissive layer containing a phosphorescent dopant compound. For example, the phosphorescent dopant compound may be comprised of platinum octaethylporphine (PtOEP), which is a compound having the chemical structure with the formula:

公开(公告)号：US5998803A

公开(公告)日：1999-12-07

申请号：US865491

申请日：1997-05-29

Applicant: Stephen Forrest ,  Paul Burrows ,  Mark E. Thompson ,  Vladimir Bulovic

Inventor： Stephen Forrest ,  Paul Burrows ,  Mark E. Thompson ,  Vladimir Bulovic

IPC: H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H01L51/52 ,  H01L35/24 ,  H01J1/62

CPC classification number: H01L51/0053 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/5088 ,  H01L2251/308 ,  H01L2251/5315 ,  H01L2251/5353 ,  H01L51/0081 ,  H01L51/5206 ,  H01L51/5281

Abstract: The present invention is directed to organic light emitting devices comprised of a heterostructure for producing electroluminescence, wherein the heterostructure includes a hole injection enhancement layer between a hole transporting layer and an indium tin oxide anode layer. The hole injection enhancement layer may be comprised of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT), or other suitable, rigid organic materials. The present invention is further directed to methods of fabricating such devices.

Abstract translation: 本发明涉及由用于产生电致发光的异质结构构成的有机发光器件，其中异质结构包括在空穴传输层和氧化铟锡阳极层之间的空穴注入增强层。 空穴注入增强层可以由3,4,9,10-苝四羧酸二酐（PTCDA），双（1,2,5-噻二唑并） - 对 - 二（1,3-二硫代）（BTQBT）或其它 合适的刚性有机材料。 本发明还涉及制造这种装置的方法。