公开(公告)号：US07553706B2

公开(公告)日：2009-06-30

申请号：US11276634

申请日：2006-03-08

申请人： Ping Liu ,  Yiliang Wu ,  Beng S Ong

发明人： Ping Liu ,  Yiliang Wu ,  Beng S Ong

IPC分类号： H01L21/00

CPC分类号： H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

摘要翻译： 一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料 倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为 比第二层更靠近半导体层。

公开(公告)号：US07517476B2

公开(公告)日：2009-04-14

申请号：US11398902

申请日：2006-04-06

申请人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong

发明人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong

IPC分类号： H01B1/12

CPC分类号： C08G73/0694 ,  C08G61/122

摘要： A polymer represented by Formula or structure (I) wherein at least one of each R, R1, R2, R3, R4, R5, and R6 is independently hydrogen, alkyl, aryl, arylalkyl, alkoxy, halogen, cyano, or nitro; x, y, a and b represent the number of groups and rings, respectively; and n represents the number of repeating groups or moieties.

摘要翻译： 由式或结构（I）表示的聚合物，其中R，R 1，R 2，R 3，R 4，R 5和R 6中的至少一个独立地为氢，烷基，芳基，芳基烷基，烷氧基，卤素，氰基或硝基; x，y，a和b分别表示组和环的数量; 并且n表示重复基团或部分的数目。

公开(公告)号：US07312469B2

公开(公告)日：2007-12-25

申请号：US10865445

申请日：2004-06-10

申请人： Beng S. Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

发明人： Beng S. Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

IPC分类号： H01L35/24

CPC分类号： H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504

摘要： An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit.

摘要翻译： 一种电子器件，包括与多个电极接触的半导体层，其中所述半导体层包括由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元以 第二环位置和第五环位置中的任一个或两个，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置处，或者在第三环位置处 环位置和第四环位置，其中对于任何两个相邻的噻吩单元，排除了在一个噻吩单元的3位和3'位上同时存在相同或不同的R 1' 其他噻吩单元的位置。

公开(公告)号：US06897284B2

公开(公告)日：2005-05-24

申请号：US10392592

申请日：2003-03-19

申请人： Ping Liu ,  Yiliang Wu ,  Lu Jiang ,  Beng S. Ong

发明人： Ping Liu ,  Yiliang Wu ,  Lu Jiang ,  Beng S. Ong

IPC分类号： C08G61/12 ,  H01B1/12 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  C08G75/00

CPC分类号： C08G61/126 ,  C08G2261/1424 ,  C08G2261/3223 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device containing a polythiophene prepared by a metal halide-mediated coupling polymerization in an appropriate solvent, and which polythiophene is comprised of at least one monomer unit selected from the group consisting of 2,5-thienylene (or 2,5-thiophenediyl) (I), 2,5-thienylene (or 2,5-thiophenediyl) (II), and a divalent linkage D wherein, for example, A is alkyl, alkoxy or derivatives thereof; B is a hydrogen atom, a small substituent like alkyl or alkoxy.

公开(公告)号：US09024298B2

公开(公告)日：2015-05-05

申请号：US11189259

申请日：2005-07-26

申请人： Mihaela Maria Birau ,  Yiliang Wu ,  Beng S Ong

发明人： Mihaela Maria Birau ,  Yiliang Wu ,  Beng S Ong

IPC分类号： H01L51/30 ,  H01L51/10 ,  H01L51/52 ,  H01L51/05

CPC分类号： H01L51/107 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/10 ,  H01L51/5237 ,  H01L51/5253

摘要： An encapsulation, barrier, or protective layer for electronic devices is disclosed comprising a lac-based material, its synthetic form and variant, or a combination thereof, which protects electronic devices from adverse environmental effects.

摘要翻译： 公开了一种用于电子器件的封装，阻挡层或保护层，其包括lac基材料，其合成形式和变体，或其组合，其保护电子器件免受不利的环境影响。

公开(公告)号：US08486304B2

公开(公告)日：2013-07-16

申请号：US11288480

申请日：2005-11-29

申请人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

发明人： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

IPC分类号： H01B1/12 ,  C08G75/00

CPC分类号： H01L51/0545 ,  C08G61/02 ,  C08G61/126 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0541

摘要： A composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation, wherein the viscosity of the composition results from a process comprising (a) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (b) lowering the temperature of the composition from the elevated temperature to the first lower temperature; and (c) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature, wherein the amount of the polymer dissolved in the liquid at the elevated temperature ranges from about 0.2% to about 5% based on the total weight of the polymer and the liquid.

摘要翻译： 包含聚合物和液体的组合物，其中所述聚合物在室温下在液体中表现出较低的溶解度，但在升高的温度下在液体中表现出较高的溶解度，其中当升高的温度降低到第一较低温度而不搅拌时，组合物凝胶化 其中组合物的粘度来自包括（a）在高温下将至少一部分聚合物溶解在液体中的方法; （b）将组合物的温度从升高的温度降低到第一较低温度; 和（c）搅拌组合物以破坏任何胶凝，其中搅拌在组合物的升高温度降低到第一较低温度之前，同时或之后的任何时间开始，其中聚合物溶解于 基于聚合物和液体的总重量，在升高的温度下的液体的范围为约0.2％至约5％。

公开(公告)号：US08222073B2

公开(公告)日：2012-07-17

申请号：US11837016

申请日：2007-08-10

申请人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

发明人： Yiliang Wu ,  Ping Liu ,  Beng S Ong

IPC分类号： G02F1/13 ,  H01L29/94

CPC分类号： H01L51/0529 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.

摘要翻译： 一种制造薄膜晶体管的工艺，包括：（a）形成栅极电介质; （b）形成包含含氟碳结构的物质的层; 和（c）形成包含噻吩化合物的半导体层，所述噻吩化合物包含一个或多个取代的噻吩单元，一个或多个未取代的噻吩单元和任选的一个或多个二价键，其中所述层接触所述栅极电介质并且设置在所述半导体层和 栅电介质。

公开(公告)号：US08134144B2

公开(公告)日：2012-03-13

申请号：US11317746

申请日：2005-12-23

申请人： Yiliang Wu ,  Jessica Sacripante ,  Beng S. Ong ,  Paul Smith

发明人： Yiliang Wu ,  Jessica Sacripante ,  Beng S. Ong ,  Paul Smith

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0558 ,  H01L51/107

摘要： There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.

摘要翻译： 本文提供了包含分散在选自聚硅氧烷，聚倍半硅氧烷及其混合物的聚合物中的无机纳米粒子的性能增强组合物。 当作为外涂层或顶层施加到诸如底栅薄膜晶体管的薄膜晶体管时，该组成提高了薄膜晶体管的载流子迁移率和电流导通/截止比。 还提供了利用该方法和/或组合物制造的薄膜晶体管。

公开(公告)号：US08089062B2

公开(公告)日：2012-01-03

申请号：US11087881

申请日：2005-03-23

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/448 ,  H01L51/5253

摘要： An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.

摘要翻译： 一种电子设备，包括：基底，活性层和包含至少一种蜡的包封层。

公开(公告)号：US07918485B2

公开(公告)日：2011-04-05

申请号：US11563989

申请日：2006-11-28

申请人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

发明人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

IPC分类号： B42D15/00 ,  B42D1/00 ,  B42D15/10

CPC分类号： B41J29/393 ,  G06K19/067 ,  Y10S283/901

摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.

摘要翻译： 公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。 可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。 可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。 还描述了用于形成和检测不同印刷标记的系统。