COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID
    111.
    发明申请
    COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID 有权
    基于功能聚合物和纳米复合物的彩色辐射剂量测定

    公开(公告)号:US20150285920A1

    公开(公告)日:2015-10-08

    申请号:US14699557

    申请日:2015-04-29

    CPC classification number: G01T1/06

    Abstract: A method for colorimetric radiation dosimetry includes subjecting an aggregate including a polymeric matrix having uniformly dispersed nanoparticles therein to radiation. The aggregate is soaked in a solution selected to dissolve decomposed pieces of the polymeric matrix to release into the solution nanoparticles from the decomposed pieces. Color of the solution is compared to a reference to determine a dose of radiation based on number of liberated nanoparticles.

    Abstract translation: 比色辐射剂量法的方法包括使包含其中具有均匀分散的纳米颗粒的聚合物基质的骨料进行辐射。 将聚集体浸泡在选择用于溶解聚合物基质的分解片的溶液中以从分解的片释放到溶液纳米颗粒中。 将溶液的颜色与参考相比较,以基于释放的纳米颗粒的数量确定辐射剂量。

    CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION
    112.
    发明申请
    CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION 有权
    用于增加主动半导体区域的碳掺量

    公开(公告)号:US20150004765A1

    公开(公告)日:2015-01-01

    申请号:US14485127

    申请日:2014-09-12

    Abstract: After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a carbon-doped semiconductor material portion. A planarization dielectric layer is deposited over the raised active semiconductor region, and the disposable gate structure is replaced with a replacement gate structure. A contact via cavity is formed through the planarization dielectric material layer by an anisotropic etch process that employs a fluorocarbon gas as an etchant. The carbon in the carbon-doped semiconductor material portion retards the anisotropic etch process, and the carbon-doped semiconductor material portion functions as a stopping layer for the anisotropic etch process, thereby making the depth of the contact via cavity less dependent on variations on the thickness of the planarization dielectric layer or pattern factors.

    Abstract translation: 在形成一次性栅极结构之后,凸起的有源半导体区域包括从掺杂剂掺杂的半导体材料部分和碳掺杂半导体材料部分的从底部到顶部的垂直堆叠。 在凸起的有源半导体区域上沉积平坦化电介质层,并且用替代栅极结构替换一次性栅极结构。 通过使用氟碳气体作为蚀刻剂的各向异性蚀刻工艺,通过平坦化介电材料层形成接触孔。 碳掺杂半导体材料部分中的碳延迟了各向异性蚀刻工艺,并且碳掺杂半导体材料部分用作用于各向异性蚀刻工艺的停止层,从而使接触通孔的深度较小地依赖于 平坦化介电层的厚度或图案因素。

    Techniques for Fabricating Janus Sensors

    公开(公告)号:US20140326613A1

    公开(公告)日:2014-11-06

    申请号:US13875394

    申请日:2013-05-02

    Abstract: Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid.

    COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID
    114.
    发明申请
    COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND NANOPARTICLE HYBRID 有权
    基于功能聚合物和纳米复合物的彩色辐射剂量测定

    公开(公告)号:US20140315316A1

    公开(公告)日:2014-10-23

    申请号:US13968754

    申请日:2013-08-16

    CPC classification number: G01T1/06

    Abstract: A method for colorimetric radiation dosimetry includes subjecting an aggregate including a polymeric matrix having uniformly dispersed nanoparticles therein to radiation. The aggregate is soaked in a solution selected to dissolve decomposed pieces of the polymeric matrix to release into the solution nanoparticles from the decomposed pieces. Color of the solution is compared to a reference to determine a dose of radiation based on number of liberated nanoparticles.

    Abstract translation: 比色辐射剂量法的方法包括使包含其中具有均匀分散的纳米颗粒的聚合物基质的骨料进行辐射。 将聚集体浸泡在选择用于溶解聚合物基质的分解片的溶液中以从分解的片释放到溶液纳米颗粒中。 将溶液的颜色与参考相比较,以基于释放的纳米颗粒的数量确定辐射剂量。

    Self-aligned silicide bottom plate for eDRAM applications by self-diffusing metal in CVD/ALD metal process
    116.
    发明授权
    Self-aligned silicide bottom plate for eDRAM applications by self-diffusing metal in CVD/ALD metal process 有权
    自对准硅化物底板,用于在CVD / ALD金属工艺中通过自扩散金属进行eDRAM应用

    公开(公告)号:US08866261B2

    公开(公告)日:2014-10-21

    申请号:US13671776

    申请日:2012-11-08

    Abstract: In one aspect, a memory cell capacitor is provided. The memory cell capacitor includes a silicon wafer; at least one trench in the silicon wafer; a silicide within the trench that serves as a bottom electrode of the memory cell capacitor, wherein a contact resistance between the bottom electrode and the silicon wafer is from about 1×10−6 ohm-cm2 to about 1×10−9 ohm-cm2; a dielectric in the trench covering the bottom electrode; and a top electrode in the trench separated from the bottom electrode by the dielectric.

    Abstract translation: 一方面,提供一种存储单元电容器。 存储单元电容器包括硅晶片; 硅晶片中的至少一个沟槽; 沟槽内的硅化物,其用作存储单元电容器的底部电极,其中底部电极和硅晶片之间的接触电阻为约1×10 -6 ohm-cm 2至约1×10 -9 ohm-cm 2 ; 覆盖底部电极的沟槽中的电介质; 并且沟槽中的顶部电极通过电介质与底部电极分离。

    SENSORS BASED ON NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTORS

    公开(公告)号:US20210018459A1

    公开(公告)日:2021-01-21

    申请号:US17036384

    申请日:2020-09-29

    Abstract: Chemical sensors and methods of forming and making the same include an input terminal and an output terminal. A negative capacitance structure is configured to control a current passing horizontally from the input terminal to the output terminal, and has a first and second metal layer that are arranged vertically with respect to one another, and a ferroelectric layer positioned between the first and second metal layers. An electrode is in electrical contact with the negative capacitance structure, and is configured to change potential, to exceed a threshold, thereby triggering a discontinuous polarization change in the negative capacitance structure.

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