Group III nitride crystal and method of its growth
    111.
    发明授权
    Group III nitride crystal and method of its growth 有权
    III族氮化物晶体及其生长方法

    公开(公告)号:US07892513B2

    公开(公告)日:2011-02-22

    申请号:US12359342

    申请日:2009-01-26

    IPC分类号: C01B21/06

    摘要: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

    摘要翻译: 提供III族氮化物晶体生长方法,使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法:制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体,并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含有III族金属的溶剂中的溶液与基板的主面接触的步骤,将III族氮化物晶体生长到主面上。

    Method for Growing Group III Nitride Crystal
    112.
    发明申请
    Method for Growing Group III Nitride Crystal 审中-公开
    生长III族氮化物晶体的方法

    公开(公告)号:US20100229786A1

    公开(公告)日:2010-09-16

    申请号:US12681624

    申请日:2008-09-19

    IPC分类号: C30B19/12

    CPC分类号: C30B29/403 C30B19/04

    摘要: A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).

    摘要翻译: 可以获得能够在液相技术下生长大规模晶体的III族氮化物晶体生长方法。 本III-氮化物晶体生长方法是通过液相技术生长III族氮化物晶体(10)的方法,并且具有:制备具有相同化学组成的III族氮化物晶体衬底(1)的步骤 作为III族氮化物晶体(10),并且具有不小于0.5mm的厚度; 以及将含氮气体(5)溶解在包含III族金属的溶剂(3)中的溶液与III族氮化物晶体基板(1)的主表面(1m)接触的步骤, 以将III族氮化物晶体(10)生长到主表面(1m)上。

    GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH
    113.
    发明申请
    GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH 有权
    第III组氮化物晶体及其生长方法

    公开(公告)号:US20100189624A1

    公开(公告)日:2010-07-29

    申请号:US12359342

    申请日:2009-01-26

    IPC分类号: C30B17/00 C01B21/06

    摘要: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

    摘要翻译: 提供III族氮化物晶体生长方法,使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法:制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体,并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含III族金属的溶剂中的溶液与基板的主面接触的步骤,将III族氮化物晶体生长到主面上。

    Process of producing permanent magnet and permanent magnet
    114.
    发明授权
    Process of producing permanent magnet and permanent magnet 有权
    生产永久磁铁和永久磁铁的工艺

    公开(公告)号:US07730755B2

    公开(公告)日:2010-06-08

    申请号:US11896360

    申请日:2007-08-31

    摘要: The present invention relates to a process of producing a permanent magnet, which includes extruding a preform to form a plate-shaped permanent magnet, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction. The present invention also relates to a plate-shaped permanent magnet formed by extruding a preform, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction, whereby the permanent magnet has a strain ratio ε2/ε1 with respect to the preform in a range of 0.2 to 3.5, in which ε1 is a strain in the direction of the extrusion of the preform and ε2 is a strain in the Y-direction.

    摘要翻译: 永磁体的制造方法技术领域本发明涉及一种永磁体的制造方法,其特征在于,包括将预成型体挤压成型,形成板状的永磁体,预成型体以预成型体的截面尺寸减小的方式挤出 X方向并且在垂直于X方向的Y方向上放大。 本发明还涉及通过挤压预成型体而形成的板状永磁体,其中预成型件以这样的方式被挤出,使得预制件的横截面的尺寸在X方向上减小并且在Y 方向垂直于X方向,由此永久磁铁相对于预成型件的应变比为2〜3,在0.2〜3.5的范围内,其中,1是在 预成型件的挤出和> 2是在Y方向上的应变。

    Compressor control unit and gas turbine power plant including this unit
    115.
    发明授权
    Compressor control unit and gas turbine power plant including this unit 有权
    包括本机组的压缩机控制单元和燃气轮机发电厂

    公开(公告)号:US07472541B2

    公开(公告)日:2009-01-06

    申请号:US11267165

    申请日:2005-11-07

    IPC分类号: F02C3/22 F02C7/00

    摘要: Provided is a compressor control unit with a high response ability to changes of gas condition of a compressor (compressor suction temperature, pressure, gas specific gravity, pressure ratio of suction pressure and discharge pressure). In the control unit for a compressor that supplies gas into a gas turbine through a header tank, an inlet gas condition is measured and a load command value from a gas turbine controller is corrected to be increased or decreased corresponding to the measured inlet gas condition.

    摘要翻译: 提供了一种对压缩机的气体状态变化(压缩机吸入温度,压力,气体比重,吸入压力和排出压力的压力比)具有高响应能力的压缩机控制单元。 在用于通过集水箱向气体涡轮机供给气体的压缩机的控制单元中,测定入口气体状况,根据测定的入口气体条件,将来自燃气轮机控制器的负荷指令值修正为增减。