摘要:
Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
摘要翻译:提供III族氮化物晶体生长方法,使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法:制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体,并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含有III族金属的溶剂中的溶液与基板的主面接触的步骤,将III族氮化物晶体生长到主面上。
摘要:
A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).
摘要:
Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.
摘要翻译:提供III族氮化物晶体生长方法,使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法:制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体,并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含III族金属的溶剂中的溶液与基板的主面接触的步骤,将III族氮化物晶体生长到主面上。
摘要:
The present invention relates to a process of producing a permanent magnet, which includes extruding a preform to form a plate-shaped permanent magnet, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction. The present invention also relates to a plate-shaped permanent magnet formed by extruding a preform, in which the preform is extruded in such a way that a dimension of a cross section of the preform is reduced in an X-direction and enlarged in a Y-direction perpendicular to the X-direction, whereby the permanent magnet has a strain ratio ε2/ε1 with respect to the preform in a range of 0.2 to 3.5, in which ε1 is a strain in the direction of the extrusion of the preform and ε2 is a strain in the Y-direction.
摘要:
Provided is a compressor control unit with a high response ability to changes of gas condition of a compressor (compressor suction temperature, pressure, gas specific gravity, pressure ratio of suction pressure and discharge pressure). In the control unit for a compressor that supplies gas into a gas turbine through a header tank, an inlet gas condition is measured and a load command value from a gas turbine controller is corrected to be increased or decreased corresponding to the measured inlet gas condition.
摘要:
A method for producing a catalyst for a fuel cell is provided which is capable of improving output characteristics of the fuel cell. Metal fine particles making up the catalyst for the fuel cell to be used as a fuel electrode and air electrode are formed by reducing platinum salt with molybdenum carbonyl. The catalyst for the fuel cell is formed by supporting platinum-molybdenum fine particles on carbon particles. By employing this reducing method, platinum-molybdenum fine particles being small in size and high in dispersibility can be obtained, making the catalyst for the fuel cell highly active. By constructing the fuel and air electrodes using the catalyst for the fuel cell, high outputs from the fuel cell are made possible.
摘要:
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
摘要:
A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion
摘要:
The present invention provides an aqueous lubricant for plastic working which comprises (a) 10 to 40% by mass of a solid lubricating agent; (b) 2 to 20% by mass of an attaching agent having both lubricating and dispersing properties; (c) 2 to 20% by mass of an agent having both wetting characteristics and moisture evaporation-accelerating actions; and water. The use of this lubricant solves problems associated with conventional aqueous lubricants such that it has insufficient lubricating property and likewise permit the completion of a plurality of continuous plastic working steps, starting from a raw material and extending over a final product, without suspending a series of these plastic working steps in the middle thereof.
摘要:
A discharge light-emitting device includes an outer envelope filled with discharge gas and a pair of electrodes contained in the outer envelope is provided. At least one of the electrodes includes an electrically conductive substrate, an n-type semiconductor layer provided on the substrate, and a p-type diamond layer provided on the n-type semiconductor layer.