摘要:
A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要:
A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.
摘要翻译:一种用于校正光刻投影曝光机的投影物镜的至少一个图像缺陷的方法,所述投影物镜包括由多个透镜和至少一个反射镜构成的光学装置,所述至少一个反射镜具有光学操作表面, 可能是有缺陷的,并且因此对至少一个图像缺陷负责,包括以下步骤:至少近似地确定主光线高度h M H的比率VM与边缘光线高度h M 在至少一个反射镜的光学操作表面处至少近似地确定透镜的透镜表面中的至少一个光学透镜表面,其中主光线高度h的比值VL的大小, 对于边缘射线高度h L L至少最接近比率VM,并且选择至少一个确定的透镜表面用于校正图像缺陷。
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system comprises illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
An optical system, for example a lens for a photolithography tool, includes a group of optical elements (L1, L2) that each comprise a birefringent cubic crystal such as CaF2. The crystal lattices of the crystals have different orientations, e.g. for reducing the overall retardance of the group by mutual compensation. The [110] crystal axis of at least one optical element (L1, L2) is tilted with respect to an optical axis (34) of the system (10) by a predefined tilting angle (θ1, θ2) having an absolute value between 1° and 20°. This reduces the magnitude, but not significantly changes the orientation of intrinsic birefringence. By selecting an appropriate tilting angle it is possible to achieve a better performance of the optical system. For example, the overall retardance of the optical system may be reduced, or the angular retardance distribution may be symmetrized.
摘要:
As a preliminary stage in manufacturing a lens or lens part for an objective, in particular a projection objective for a microlithography projection system, an optical blank is made from a crystal material. As a first step in manufacturing the optical blank, one determines the orientation of a first crystallographic direction that is defined in the crystallographic structure of the material. The material is then machined into an optical blank so that the first crystallographic direction is substantially perpendicular to an optical blank surface of the optical blank. Subsequently, a marking is applied to the optical blank or to a mounting element of the optical blank. The marking has a defined relationship to a second crystallographic direction which is oriented at a non-zero angle relative to the first crystallographic direction.
摘要:
An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.
摘要:
An optical system (1) includes a first optical subsystem (3) with at least a first birefringent optical element (7), and further includes a second optical subsystem (5) with at least a second birefringent optical element (9). Between the first optical subsystem and the second optical subsystem, an optical retarding system (13) with at least a first optical retarding element (15) is arranged, which introduces a retardation of one-half of a wavelength between two mutually orthogonal states of polarization.
摘要:
A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.
摘要:
A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.
摘要:
A catadioptric projection objective for images an object field onto an image field via imaging radiation. The projection objective includes at least one reflective optical component and a measuring device. The reflective optical component, during the operation of the projection objective, reflects a first part of the imaging radiation and transmits a second part of the imaging radiation. The reflected, first part of the imaging radiation at least partly contributes to the imaging of the object field. The transmitted, second part of the imaging radiation is at least partly fed to a measuring device. This allows a simultaneous exposure of the photosensitive layer at the location of the image field with the imaging radiation and monitoring of the imaging radiation with the aid of the measuring device.