公开(公告)号：US20060071167A1

公开(公告)日：2006-04-06

申请号：US11282645

申请日：2005-11-21

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

公开(公告)号：US06936818B2

公开(公告)日：2005-08-30

申请号：US10681116

申请日：2003-10-09

Applicant: Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

Inventor： Atsushi Takane ,  Haruo Yoda ,  Hideo Todokoro ,  Fumio Mizuno ,  Shoji Yoshida ,  Mitsuji Ikeda ,  Mitsugu Sato ,  Makoto Ezumi

IPC: G01Q10/00 ,  G01Q30/04 ,  G01Q30/02 ,  H01J37/22 ,  H01J37/21

CPC classification number: G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T5/50 ,  G06T7/13 ,  G06T7/62 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/21 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/21 ,  H01J2237/216 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract translation: 本发明的目的是获得一种聚焦于样品的所有部分的图像，并提供一种能够获得在整个样品上没有模糊部分的二维图像的带电粒子束装置。 为了实现上述目的，本发明包括用于改变从带电粒子源发射的带电粒子束的聚焦条件的装置，用于检测从所述样品的表面部分照射的带电粒子的带电粒子检测器， 发射的带电粒子束，以及用于基于所述带电粒子束聚焦的信号来组合样品的表面部分的二维图像的装置，所述信号在从带电粒子检测器输出的信号中。

公开(公告)号：US20050116164A1

公开(公告)日：2005-06-02

申请号：US10912792

申请日：2004-08-06

Applicant: Alex Goldenshtein ,  Radel Ben-Av ,  Asher Pearl ,  Igor Petrov ,  Nadav Haas

Inventor： Alex Goldenshtein ,  Radel Ben-Av ,  Asher Pearl ,  Igor Petrov ,  Nadav Haas

IPC: G01N23/203 ,  G01N23/22 ,  G21K7/00 ,  G01N23/00

CPC classification number: G01N23/22 ,  G01N23/203 ,  H01J37/1478 ,  H01J37/265 ,  H01J2237/202 ,  H01J2237/2611 ,  H01J2237/281

Abstract: The present invention provides, according to a first aspect, a method for the examination of specimen with a beam of charged particles. The method provides one or more images of the specimen made with different view angles, so that, compared to a single image of the specimen, a lot of additional information about the specimen can be accessed. The different view angles (angles of incidence) are achieved by tilting the beam between the two images and moving the specimen to a new position so that the displacement of the beam caused by the tilting of the beam is compensated. Accordingly, while displaying/recording the second image the beam scans over the same area as it has scanned while displaying/recording the first image.

Abstract translation: 根据第一方面，本发明提供一种用带电粒子束检查样品的方法。 该方法提供了具有不同视角的样本的一个或多个图像，使得与样本的单个图像相比，可以访问大量关于样本的附加信息。 通过在两个图像之间倾斜光束并将样本移动到新位置来实现不同的视角（入射角），使得由光束的倾斜引起的光束的位移被补偿。 因此，当显示/记录第二图像时，在显示/记录第一图像的同时，光束扫描与其扫描的相同的区域。

公开(公告)号：US06700122B2

公开(公告)日：2004-03-02

申请号：US10035150

申请日：2002-01-04

Applicant: Miyako Matsui ,  Mari Nozoe ,  Atsuko Takafuji

Inventor： Miyako Matsui ,  Mari Nozoe ,  Atsuko Takafuji

IPC: G01R3126

CPC classification number: H01J37/28 ,  H01J2237/281 ,  H01J2237/2817

Abstract: The present invention provides a wafer inspection technique capable of detecting a defect in a wafer on which a pattern having a large step such as a contact hole being subjected to a semiconductor manufacturing process is formed and obtaining information such as the position and kind of a defect such as a hole with open contact failure caused in dry etching process at high speed. A wafer on which a pattern having a large step being subjected to a semiconductor manufacturing process is formed is scanned and irradiated with an electron beam having irradiation energy which is in a range from 100 eV to 1,000 eV, and a defect is detected at high speed from an image of secondary electrons generated. Before the secondary electron image is captured, the wafer is irradiated with an electron beam at high speed while being moved to thereby charge the surface of the wafer with a desired charging voltage. The kind of the defect is determined from the captured secondary electron image, and a distribution of defects in the plane of the wafer is displayed.

Abstract translation: 本发明提供一种晶片检查技术，其能够检测在其上形成具有大台阶的图案的晶片中的缺陷，所述图案具有形成半导体制造工艺的接触孔，诸如缺陷的位置和种类等信息 例如在高速干燥蚀刻工艺中引起的具有开放接触故障的孔。 对其上形成具有大步骤的图案进行半导体制造处理的晶片被扫描并照射具有在100eV至1,000eV范围内的照射能量的电子束，并且以高速检测缺陷 从二次电子的图像生成。 在捕获二次电子图像之前，在移动的同时以高速度用电子束照射晶片，从而以期望的充电电压对晶片的表面充电。 从捕获的二次电子图像确定缺陷的种类，并且显示晶片的平面中的缺陷的分布。

公开(公告)号：US20040021076A1

公开(公告)日：2004-02-05

申请号：US10434977

申请日：2003-05-09

Applicant: Applied Materials Israel Ltd

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: H01J037/28

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US5412209A

公开(公告)日：1995-05-02

申请号：US982768

申请日：1992-11-27

Applicant: Tadashi Otaka ,  Akimitsu Okura ,  Hiroshi Iwamoto ,  Hideo Todokoro ,  Tsutomu Komoda ,  Issei Tobita

Inventor： Tadashi Otaka ,  Akimitsu Okura ,  Hiroshi Iwamoto ,  Hideo Todokoro ,  Tsutomu Komoda ,  Issei Tobita

IPC: G01Q30/02 ,  H01J37/28 ,  H01J37/14

CPC classification number: H01J37/28 ,  H01J2237/2448 ,  H01J2237/281

Abstract: An electron beam apparatus comprises an electron beam source, a unit for irradiating an electron beam on a specimen, a detector for secondary electrons, an electrode for generating an electric field sufficient to draw out secondary electrons in a recess in the specimen from the recess, and a unit for generating a magnetic field for focusing secondary electrons drawn out of the recess. With this construction, the secondary electrons drawn out of the recess by the electric field reach the detector without being attracted by the electrode. By adopting this construction, a contact hole of high aspect ratio formed in a semiconductor device and having a small diameter and a large depth can be observed.

Abstract translation: 电子束装置包括电子束源，用于在试样上照射电子束的单元，用于二次电子的检测器，用于产生足以从所述凹部在所述试样中的凹陷中抽取二次电子的电场的电极， 以及用于产生用于聚焦从凹部拉出的二次电子的磁场的单元。 利用这种结构，通过电场从凹槽中拉出的二次电子到达检测器而不被电极吸引。 通过采用这种结构，可以观察到形成在半导体器件中并具有小直径和大深度的高纵横比的接触孔。