公开(公告)号：US20110114894A1

公开(公告)日：2011-05-19

申请号：US12766258

申请日：2010-04-23

Applicant: Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG ,  Byung-sung KIM

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG ,  Byung-sung KIM

IPC: H01B1/04 ,  H01B1/02 ,  B05D3/00

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/02554 ,  H01L21/02639 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/1606 ,  H01L51/0048

Abstract: A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

Abstract translation: 复合结构和复合结构的制造方法。 复合结构包括石墨烯片; 以及通过石墨烯片取向并具有基本上一维形状的纳米结构。

公开(公告)号：US07863628B2

公开(公告)日：2011-01-04

申请号：US12031287

申请日：2008-02-14

Applicant: Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

Inventor： Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

IPC: H01L27/15

CPC classification number: H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract translation: 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。

公开(公告)号：US20100327258A1

公开(公告)日：2010-12-30

申请号：US11932953

申请日：2007-10-31

Applicant: Eun Kyung LEE ,  Jai Yong HAN ,  Byoung Lyong CHOI ,  Kyung Sang CHO

Inventor： Eun Kyung LEE ,  Jai Yong HAN ,  Byoung Lyong CHOI ,  Kyung Sang CHO

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01L33/08 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02B2207/101 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02642 ,  H01L33/0012 ,  H01L33/24 ,  H01L33/507 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/936

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract translation: 公开了一种生产核 - 壳纳米线的方法，其中绝缘膜预先被图案化以阻挡纳米线芯和纳米线壳之间的接触。 根据该方法，可以以简单的方式生产其密度和位置可控制的核 - 壳纳米线。 进一步公开的是通过该方法生产的纳米线和包含纳米线的纳米线器件。 纳米线的使用导致器件的发光/接收面积的增加。 因此，该装置表现出高的亮度/效率特性。

公开(公告)号：US20100230663A1

公开(公告)日：2010-09-16

申请号：US12656831

申请日：2010-02-17

Applicant: Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

Inventor： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

IPC: H01L51/00

CPC classification number: H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

Abstract: A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

公开(公告)号：US07764344B2

公开(公告)日：2010-07-27

申请号：US11827625

申请日：2007-07-12

Applicant: Brian Yi ,  Eun Kyung Lee ,  Gene Huh

Inventor： Brian Yi ,  Eun Kyung Lee ,  Gene Huh

IPC: G02F1/1333 ,  G02F1/13

CPC classification number: G02F1/133308 ,  G02F2001/133302 ,  G02F2201/503 ,  G02F2202/28

Abstract: A ruggedized, high brightness, liquid crystal display (LCD) unit having a thin display panel, a front cover glass faceplate and an improved backlight assembly is disclosed. The faceplate is bonded to the panel using an improved process to minimize panel deformation and the backlight assembly is configured with an array of selectively spaced light emitting diodes (LED's) adapted to provide a uniform high brightness display with a minimal quantity of LED's.

Abstract translation: 公开了具有薄显示面板，前盖玻璃面板和改进的背光组件的坚固耐用的高亮度液晶显示器（LCD）单元。 面板使用改进的工艺结合到面板上以最小化面板变形，并且背光组件配置有适于提供具有最少量LED的均匀高亮度显示的选择性间隔开的发光二极管（LED）的阵列。

公开(公告)号：US20100084628A1

公开(公告)日：2010-04-08

申请号：US12401891

申请日：2009-03-11

Applicant: Eun Kyung LEE ,  Byoung Ryong CHOI ,  Sang Jin LEE

Inventor： Eun Kyung LEE ,  Byoung Ryong CHOI ,  Sang Jin LEE

IPC: H01L29/66 ,  B05D3/10 ,  C03C25/68 ,  C23C14/30

CPC classification number: H01L21/02521 ,  C30B11/12 ,  C30B25/005 ,  C30B25/20 ,  C30B29/06 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  Y10S977/762 ,  Y10S977/773 ,  Y10T428/2913 ,  Y10T428/2922 ,  Y10T428/2927

Abstract: Disclosed herein are a branched nanowire having parasitic nanowires grown at a surface of the branched nanowire, and a method for fabricating the same. The branched nanowire may be fabricated in a fractal form and seeds of the parasitic nanowires may be formed by thermal energy irradiation and/or a wet-etching process. The branched nanowire may effectively be used in a wide variety of applications such as, for example, sensors, photodetectors, light emitting elements, light receiving elements, and the like.

Abstract translation: 本文公开了具有在分支纳米线表面生长的寄生纳米线的支链纳米线及其制造方法。 分支纳米线可以以分形形式制造，并且寄生纳米线的种子可以通过热能照射和/或湿法蚀刻工艺形成。 分支纳米线可以有效地用于各种应用中，例如传感器，光电检测器，发光元件，光接收元件等。

公开(公告)号：USD596217S1

公开(公告)日：2009-07-14

申请号：US29310149

申请日：2008-07-29

Applicant: Tae-hwan Kim ,  Eun-kyung Lee

Designer： Tae-hwan Kim ,  Eun-kyung Lee

公开(公告)号：USD596214S1

公开(公告)日：2009-07-14

申请号：US29310174

申请日：2008-07-30

Applicant: Tae-hwan Kim ,  Eun-kyung Lee

Designer： Tae-hwan Kim ,  Eun-kyung Lee

公开(公告)号：US20090053126A1

公开(公告)日：2009-02-26

申请号：US11931991

申请日：2007-10-31

Applicant: Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

Inventor： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

IPC: H01L21/20 ,  C01B33/023

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/033 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665

Abstract: A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis.

Abstract translation: 提供了大量生产纳米结构的方法。 该方法包括将金属催化剂纳米颗粒引入中孔模板的多个均匀尺寸的孔中，以三维方式分布含有金属催化剂纳米颗粒的模板，并将纳米线源引入模板的孔中以将纳米线源生长成 沿着毛孔长度的纳米线。 还提供了通过该方法制备的纳米结构。 纳米结构具有均匀的厚度。 此外，纳米结构可以具有各种形状并且可以被可控地掺杂。 纳米结构可以应用于各种设备，包括电子设备，例如用于各种应用的场效应晶体管（FET）和发光二极管（LED），光电探测器，纳米分析仪和高灵敏度信号检测器， 癌症诊断。

公开(公告)号：US20090045720A1

公开(公告)日：2009-02-19

申请号：US11449230

申请日：2006-06-08

Applicant: Eun Kyung Lee ,  Byoung Lyong Choi ,  Jong Min Kim ,  Soon Jae Kwon ,  Kyung Sang Cho ,  Jae Ho Lee

Inventor： Eun Kyung Lee ,  Byoung Lyong Choi ,  Jong Min Kim ,  Soon Jae Kwon ,  Kyung Sang Cho ,  Jae Ho Lee

IPC: H01J1/62 ,  H01J1/02 ,  H01L21/28

CPC classification number: H01L29/0665 ,  H01J9/025 ,  H01J2329/0431 ,  H01J2329/0455 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/22

Abstract: Disclosed herein is a method for producing nanowires, which features the use of a porous glass template in combination with a solid-liquid-solid or vapor-liquid-solid process for growing nanowires which are highly straight and have nanoparticles precisely arranged therein. The nanowires can be grown into composite structures of superlattices and hybrids by modulating the composition of the materials provided thereto. Also disclosed is the use of the nanowires in multi-probes, field emission tips, and devices.

Abstract translation: 本文公开了一种用于生产纳米线的方法，其特征在于使用多孔玻璃模板与用于生长高度直线且具有精确排列的纳米线的固液固体或气液固化方法。 通过调节提供给其的材料的组成，纳米线可以生长成超晶格和杂化物的复合结构。 还公开了在多探针，场发射尖端和器件中使用纳米线。