公开(公告)号：US20070152589A1

公开(公告)日：2007-07-05

申请号：US11511297

申请日：2006-08-29

申请人： Hyun Kim ,  Kyoung-Doo Kang ,  Se-Jong Kim ,  Hyun Soh ,  Yun-Hee Kim ,  Jin-Won Han

发明人： Hyun Kim ,  Kyoung-Doo Kang ,  Se-Jong Kim ,  Hyun Soh ,  Yun-Hee Kim ,  Jin-Won Han

IPC分类号： H01J17/49

CPC分类号： H01J11/38 ,  H01J11/12 ,  H01J11/24 ,  H01J2211/245

摘要： A plasma display panel that reduces a discharge voltage and increases discharge stability, includes: a rear substrate; a front substrate disposed to oppose the rear substrate; barrier ribs disposed between the front substrate and the rear substrate and partitioning a plurality of discharge cells; pairs of sustain electrodes disposed on the front substrate opposing the rear substrate, and including bus electrodes disposed in a direction and a plurality of projection electrodes electrically connected to the bus electrodes in each of discharge cells and projected inward each of the discharge cells; a front dielectric layer covering the sustain electrodes and having grooves corresponding to each of the discharge cells; address electrodes extending to cross the sustain electrodes and disposed on the rear substrate opposing the front substrate; a rear dielectric layer disposed to cover the address electrodes; phosphor layers disposed in the discharge cells; and a discharge gas stored in the discharge cells, wherein the width of the projection electrodes opposing inward the discharge cells is wider than the width of the grooves.

摘要翻译： 一种降低放电电压并增加放电稳定性的等离子体显示面板包括：后基板; 设置成与所述后基板相对的前基板; 隔壁，设置在前基板和后基板之间并分隔多个放电单元; 成对的维持电极配置在与前基板相对的前基板上，并且包括沿着一个方向设置的总线电极和与放电单元中的每个放电单元中的总线电极电连接并向每个放电单元突出的多个突起电极; 覆盖所述维持电极并具有对应于每个所述放电单元的槽的前介电层; 寻址电极延伸以跨过维持电极并且设置在与前基板相对的后基板上; 设置成覆盖寻址电极的后部电介质层; 设置在放电单元中的荧光体层; 以及存储在放电单元中的放电气体，其中与放电单元相对内侧的突出电极的宽度比沟槽的宽度宽。

公开(公告)号：US20070152584A1

公开(公告)日：2007-07-05

申请号：US11646746

申请日：2006-12-27

申请人： Hyun Kim ,  Kyoung-Doo Kang ,  Se-Jong Kim ,  Yun-Hee Kim ,  Hyun Soh ,  Jin-Won Han

发明人： Hyun Kim ,  Kyoung-Doo Kang ,  Se-Jong Kim ,  Yun-Hee Kim ,  Hyun Soh ,  Jin-Won Han

IPC分类号： H01J17/49

CPC分类号： H01J11/32 ,  H01J11/12 ,  H01J11/38 ,  H01J2211/326

摘要： A plasma display panel includes barrier ribs disposed between a front substrate and a rear substrate and define discharge cells. Sustain electrode pairs are disposed on the front substrate. Address electrodes are disposed on the rear substrate in a direction to cross the length direction of the sustain electrode pairs. A front dielectric layer covers the sustain electrode pairs, and has grooves formed in a direction parallel to the length direction of the sustain electrode pairs such that the grooves have slopes in a direction from the rear substrate towards the front substrate with ends of the sustain electrode pairs being located on a lower surface of the front substrate where shadows of the slopes are cast. A rear dielectric layer covers the address electrodes. Phosphor layers are coated in the discharge cells and a discharge gas fills the discharge cells.

摘要翻译： 等离子体显示面板包括设置在前基板和后基板之间的阻挡肋，并且限定放电单元。 维持电极对设置在前基板上。 地址电极沿着与维持电极对的长度方向交叉的方向设置在后基板上。 前电介质层覆盖维持电极对，并且具有沿与维持电极对的长度方向平行的方向形成的槽，使得沟槽沿着从后基板朝向前基板的方向具有在维持电极的端部的斜面 对位于前基板的下斜面的阴影处。 后电介质层覆盖寻址电极。 荧光体层被涂覆在放电单元中，并且放电气体填充放电单元。

公开(公告)号：US20070122978A1

公开(公告)日：2007-05-31

申请号：US11604222

申请日：2006-11-27

申请人： Byoung Choi ,  Ki Lee ,  Ho Chung ,  Jun Yi ,  Sung Jung ,  Hyun Kim ,  Jun Kim

发明人： Byoung Choi ,  Ki Lee ,  Ho Chung ,  Jun Yi ,  Sung Jung ,  Hyun Kim ,  Jun Kim

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513

摘要： A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

摘要翻译： 非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物（SiON）层，所述SiON层上的第一绝缘体层，所述第一绝缘体上的氮化物膜，所述氮化物膜上的第二绝缘体层，所述第二绝缘体上的电极和源极 /漏极在多晶硅层。

公开(公告)号：US20070122053A1

公开(公告)日：2007-05-31

申请号：US11619926

申请日：2007-01-04

申请人： Hyun Kim ,  Jong Ra ,  Sung Kim ,  Young Lee

发明人： Hyun Kim ,  Jong Ra ,  Sung Kim ,  Young Lee

IPC分类号： G06K9/40

CPC分类号： H04N19/86 ,  H04N19/00 ,  H04N19/126 ,  H04N19/137 ,  H04N19/176 ,  H04N19/182 ,  H04N19/198 ,  H04N19/48 ,  H04N19/527 ,  H04N19/80 ,  H04N19/85

摘要： A method of coding a moving picture is provided that reduces blocking artifacts. The method can include defining a plurality of defining pixels S0, S1, and S2, which are centered around a block boundary. If a default mode is selected then frequency information of the surroundings of the block boundary is obtained. A magnitude of a discontinuous component in a frequency domain belonging to the block boundary is adjusted based on a magnitude of a corresponding discontinuous component selected from a pixel contained entirely within a block adjacent the block boundary. The frequency domain adjustment is then applied to a spatial domain. Or, a DC offset mode can be selected to reduce blocking artifacts in smooth regions where there is little motion.

公开(公告)号：US20070096115A1

公开(公告)日：2007-05-03

申请号：US11581757

申请日：2006-10-17

申请人： Hyuk Lee ,  In Pyeon ,  Hyun-Ju Park ,  Hyun Kim ,  Dong Kim ,  Hyoun Shin

发明人： Hyuk Lee ,  In Pyeon ,  Hyun-Ju Park ,  Hyun Kim ,  Dong Kim ,  Hyoun Shin

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极，p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极，n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间，并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。

公开(公告)号：US20070064795A1

公开(公告)日：2007-03-22

申请号：US11517267

申请日：2006-09-08

申请人： Daesung Cho ,  Hyun Kim ,  Wooshik Kim ,  Dmitri Birinov

发明人： Daesung Cho ,  Hyun Kim ,  Wooshik Kim ,  Dmitri Birinov

IPC分类号： H04N11/04 ,  H04B1/66

CPC分类号： H04N19/82 ,  H04N19/107 ,  H04N19/11 ,  H04N19/117 ,  H04N19/147 ,  H04N19/159 ,  H04N19/19 ,  H04N19/593 ,  H04N19/61

摘要： An apparatus and method for coding and decoding an image are provided. The apparatus for coding the image includes a spatio-temporal information prediction/compensation unit, a recovered image processor, a residue generator, a quantizer, and an entropy encoder. The spatio-temporal information prediction/compensation unit generates a predicted image by predicting and compensating spatio-temporal information including at least one of temporal prediction information from a current image and a recovered previous image, and spatial prediction information from a recovered current image. The recovered image processor performs a spatio-temporal noise removal process on the recovered current image using the spatio-temporal information, and stores the resulting noise-removed image. The residue generator generates a residue image obtained by subtracting the predicted image from the input image, and the quantizer outputs quantized coefficients by quantizing the residue image. The entropy encoder generates a bit stream by entropy coding the quantized coefficients.

摘要翻译： 提供了一种用于对图像进行编码和解码的装置和方法。 用于编码图像的装置包括时空信息预测/补偿单元，恢复的图像处理器，残差生成器，量化器和熵编码器。 时空信息预测/补偿单元通过预测和补偿包括来自当前图像的时间预测信息和恢复的先前图像中的至少一个以及来自恢复的当前图像的空间预测信息的时空信息来生成预测图像。 恢复的图像处理器使用时空信息对恢复的当前图像执行空间 - 时间噪声去除处理，并且存储所得到的噪声去除图像。 残差生成器生成通过从输入图像中减去预测图像而获得的残差图像，量化器通过量化残差图像来输出量化系数。 熵编码器通过对量化系数进行熵编码来生成比特流。

公开(公告)号：US20070057312A1

公开(公告)日：2007-03-15

申请号：US11450096

申请日：2006-06-09

申请人： Hyun Kim

发明人： Hyun Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/7831 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/10844 ,  H01L29/7851

摘要： A transistor of a semiconductor memory device including a semiconductor substrate having a plurality of active regions and a device isolation region, a plurality of first and second trench device isolation layers, which are arranged alternately with each other on the device isolation region of the semiconductor substrate, the first trench device isolation layers having a first thickness corresponding to a relatively high step height, and the second trench device isolation layers having a second thickness corresponding to a relatively low step height, a recess region formed in each of the active regions by a predetermined depth to have a stepped profile at a boundary portion thereof, the recess region having a height higher than that of the second trench device isolation layers to have an upwardly protruded portion between adjacent two second trench device isolation layers, a gate insulation layer, and a plurality of gate stacks formed on the gate insulation layer to overlap with the stepped profile of the respective active regions and the protruded portion of the relevant recess region.

摘要翻译： 一种半导体存储器件的晶体管，包括具有多个有源区和器件隔离区的半导体衬底，多个第一和第二沟槽器件隔离层，它们在半导体衬底的器件隔离区上相互交替布置 所述第一沟槽器件隔离层具有对应于较高台阶高度的第一厚度，并且所述第二沟槽器件隔离层具有对应于相对较低台阶高度的第二厚度，在每个所述有源区域中形成的凹陷区域由 预定深度在其边界部分处具有阶梯轮廓，所述凹陷区域的高度高于所述第二沟槽器件隔离层的高度，以在相邻的两个第二沟槽器件隔离层之间具有向上突出部分，栅极绝缘层和 形成在栅极绝缘层上的与栅极堆叠重叠的多个栅极堆叠 相应的活性区域的凸起轮廓和相关凹陷区域的突出部分。

公开(公告)号：US20070038438A1

公开(公告)日：2007-02-15

申请号：US11438855

申请日：2006-05-23

申请人： Joon Cho ,  Hyun Kim ,  Hyoung Kim ,  Joo Lee ,  Chung Hong ,  Jin Jung

发明人： Joon Cho ,  Hyun Kim ,  Hyoung Kim ,  Joo Lee ,  Chung Hong ,  Jin Jung

IPC分类号： G06F17/27

CPC分类号： G06F16/367

摘要： A context knowledge modeling method is provided. The context knowledge modeling method includes the steps of: a) defining a context knowledge space as a two-dimensional space based on an abstract level and an application domain of knowledge; b) locating a share ontology as a highest level of the abstract level for defining a common ontology concept at a plurality of applications and services performed in various environment and domains; c) locating at least one of domain ontologies as a lower abstract level than the share ontology by taking over the ontology concept defined at the share ontology and defining a class and an attribute specialized at a corresponding domain and a developing application; and d) locating one or more instance bases expressing knowledge about real objects to have a lower abstract level than the domain ontologies.

摘要翻译： 提供了上下文知识建模方法。 上下文知识建模方法包括以下步骤：a）基于知识的抽象层次和应用领域，将上下文知识空间定义为二维空间; b）将共享本体定位为在各种环境和域中执行的多个应用和服务中定义共同本体概念的抽象级别的最高级别; c）通过接管共享本体定义的本体概念并定义专门在相应域和开发应用的类和属性，将至少一个域本体定位为比共享本体更低的抽象级别; 以及d）找到一个或多个表示关于真实对象的知识的实例基础具有比领域本体更低的抽象级别。

公开(公告)号：US20060264047A1

公开(公告)日：2006-11-23

申请号：US11495437

申请日：2006-07-28

申请人： Hyun Kim ,  Byron Burgess

发明人： Hyun Kim ,  Byron Burgess

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/336

CPC分类号： H01L21/76897

摘要： Methods of forming a contact structure for semiconductor assemblies are described. One method provides process steps to create an inner dielectric isolation layer after the contact region is protected, which is followed by the formation of the self-aligned contact structures. A second method provides process steps to create an inner dielectric isolation layer after the self-aligned contact structures are formed.

公开(公告)号：US20060255714A1

公开(公告)日：2006-11-16

申请号：US11433204

申请日：2006-05-11

申请人： Ho Chun ,  Dai Jung ,  Kyeong Jung ,  Ki Lee ,  Hyun Kim ,  Dong Kang

发明人： Ho Chun ,  Dai Jung ,  Kyeong Jung ,  Ki Lee ,  Hyun Kim ,  Dong Kang

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J61/305 ,  H01J9/247 ,  H01J9/266 ,  H01J65/046

摘要： A flat fluorescent lamp includes two panels 110, 120, 210, 220 disposed at an upper position and a lower position respectively; barriers 130, 230 forming discharge spaces 160, 260 which are provided with discharge gas; first bonding parts 140, 240 partially formed on the barriers 130, 230 to bond the barriers partially to the panel 110, 120, 210, 220; a second bonding part 150, 250 wholly formed between the two panels 110, 120, 210, 220 along peripheries of the two panels 110, 120, 210, 220 to wholly bond the peripheries of the two panels 110, 120, 210, 220; and electrodes 170, 270 for applying discharge voltage to the discharge gas.

摘要翻译： 平面荧光灯包括分别设置在上部位置和下部位置的两个面板110,120,210,220; 形成放电空间160,260的阻挡层130,230，其设置有放电气体; 部分地形成在阻挡层130,230上的第一接合部分140,240将阻挡件部分地接合到面板110,120,210,220; 沿两个面板110,120,210,220的外围整体形成在两个面板110,120,210,220之间的第二接合部分150,250，以完全结合两个面板110,120,210,220的周边; 以及用于向放电气体施加放电电压的电极170,270。