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公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。
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122.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE READ HEAD WITH MULTIPLE SENSING ELEMENTS FOR PATTERNED-MEDIA 有权具有多种传感元件的电流 - 平面（CPP）磁性读取头公开(公告)号：US20110069413A1
公开(公告)日：2011-03-24
申请号：US12565721
申请日：2009-09-23
申请人： Stefan Maat , James Terrence Olson , Hal J. Rosen
发明人： Stefan Maat , James Terrence Olson , Hal J. Rosen
CPC分类号： G11B5/746 , B82Y10/00 , G11B5/02 , G11B5/3948 , G11B5/3977 , G11B5/4886 , G11B5/743 , G11B2005/0005
摘要： A magnetoresistive (MR) sensor or read head for a magnetic recording disk drive has multiple independent current-perpendicular-to-the-plane (CPP) MR sensing elements. The sensing elements are spaced-apart in the cross-track direction and separated by an insulating separation region so as to be capable of reading data from multiple data tracks on the disk. The sensing elements have independent CPP sense currents, each of which is directed to independent data detection electronics, respectively. Each sensing element comprises a stack of layers formed on a common electrically conducting base layer, which may be a bottom magnetic shield layer formed of electrically conducting magnetically permeable material. Each sensing element has a top electrical lead layer. A top magnetic shield layer is located above the sensing elements in contact with the top lead layers. The top shield layer is formed of soft magnetically permeable material, but is electrically insulating, so that the independent sense currents can be passed to the independent sensing elements.
摘要翻译： 用于磁记录磁盘驱动器的磁阻（MR）传感器或读头具有多个独立的电流垂直于平面（CPP）MR感测元件。 感测元件在交叉轨道方向上间隔开并且被绝缘分离区分开，以便能够从盘上的多个数据轨道读取数据。 感测元件具有独立的CPP感测电流，每个电流分别被引导到独立的数据检测电子器件。 每个感测元件包括形成在公共导电基底层上的一叠层，其可以是由导电的导磁材料形成的底部磁屏蔽层。 每个感测元件具有顶部电引线层。 顶部磁屏蔽层位于与顶部引线层接触的感测元件上方。 顶部屏蔽层由软磁导电材料形成，但是是电绝缘的，使得独立的感测电流可以传递到独立的感测元件。
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123.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS AND Ag OR AgCu SPACER LAYER 有权具有CoFeGe FERROMAGNETIC LAYERS和Ag或AgCu间隔层的电流 - 平面（CPP）磁感应传感器公开(公告)号：US20110026168A1
公开(公告)日：2011-02-03
申请号：US12904060
申请日：2010-10-13
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , G11B5/398 , G11B5/3983 , H01L43/10
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer and a spacer layer of Ag, Cu or a AgCu alloy between the free and pinned layers. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
摘要翻译： 电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或被钉扎层中具有包含Co，Fe和Ge的铁磁合金和Ag，Cu或 AgCu合金在自由和固定层之间。 传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。 或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁合金形成。 含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。 更具体地说，CoFeGe合金基本上仅由根据式（CoxFe（100-x））（100-y）的Co，Fe和Ge组成，其中下标表示原子百分比，x在约45和55之间， y在约23和37之间。
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124.发明授权Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction 有权具有具有正磁致伸缩性的磁稳定自由层的磁阻传感器公开(公告)号：US07791844B2
公开(公告)日：2010-09-07
申请号：US11737701
申请日：2007-04-19
IPC分类号： G11B5/39
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12
摘要： A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.
摘要翻译： 具有由具有正磁致伸缩性的材料制成的磁稳定自由层的磁阻传感器，例如Co-Fe-B合金。 尽管自由层由具有正磁致伸缩的材料制成，这通常会使自由层不稳定，但是由于具有易磁化轴平行于空气的诱导磁各向异性，自由层的磁化保持稳定 （ABS）。 自由层的磁各向异性由自由层表面的各向异性纹理引发。 产生的各向异性表面纹理是通过离子研磨工艺产生的，该离子铣削工艺利用相对于晶片表面法线的锐角定向的离子束，其中制造传感器，同时将晶片保持在静止卡盘上。 这种成角度的静态离子铣削产生自由层的各向异性表面纹理或粗糙度，这导致上述磁各向异性，并且在所需方向上具有容易的磁化轴。
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125.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性公开(公告)号：US07672090B2
公开(公告)日：2010-03-02
申请号：US11097920
申请日：2005-03-31
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。
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公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。
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127.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with high-resistivity amorphous ferromagnetic layers 失效具有高电阻非晶铁磁层的电流 - 垂直于平面（CPP）磁阻传感器公开(公告)号：US07599157B2
公开(公告)日：2009-10-06
申请号：US11356546
申请日：2006-02-16
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a high-resistivity amorphous ferromagnetic alloy in the free layer and/or the pinned layer. The sensor may have an antiparallel (AP)-pinned structure, in which case the AP2 layer may be formed of the high-resistivity amorphous ferromagnetic alloy. The amorphous alloy is an alloy of one or more elements selected from Co, Fe and Ni, and at least one nonmagnetic element X. The additive element or elements is present in an amount that renders the otherwise crystalline alloy amorphous and thus substantially increases the electrical resistivity of the layer. As a result the resistance of the active region of the sensor is increased. The amount of additive element or elements is chosen to be sufficient to render the alloy amorphous but not high enough to substantially reduce the magnetic moment M or bulk electron scattering parameter β.
摘要翻译： 电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在自由层和/或被钉扎层中具有高电阻率的非晶铁磁合金。 传感器可以具有反平行（AP）固定结构，在这种情况下，AP2层可以由高电阻率无定形铁磁合金形成。 非晶态合金是选自Co，Fe和Ni中的一种或多种元素的合金，以及至少一种非磁性元素X.添加元素或元素的存在量使得其它结晶合金为无定形的，因此基本上增加了电 层的电阻率。 结果，传感器的有源区的电阻增加。 添加元素或元素的量被选择为足以使合金无定形但不足以显着降低磁矩M或体电子散射参数β。
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128.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS 有权具有CoFeGe FERROMAGNETIC LAYERS的电流 - 平面（CPP）磁传感器公开(公告)号：US20090027813A1
公开(公告)日：2009-01-29
申请号：US11781576
申请日：2007-07-23
IPC分类号： G11B5/33
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (CoxFe(100-x))(100-y)Gey where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 23 and 37.
摘要翻译： 电流垂直于平面的自旋阀（CPP-SV）磁阻传感器在传感器的自由层和/或固定层中具有包含Co，Fe和Ge的铁磁合金。 传感器可以是简单的钉扎结构，在这种情况下，被钉扎层可以由CoFeGe铁磁合金形成。 或者，传感器可以具有AP钉扎层结构，在这种情况下，AP2层可以由CoFeGe铁磁合金形成。 含Ge合金包括Co，Fe和Ge，其中Ge在合金中以约20至40原子％的量存在，并且其中合金中Co与Fe的比率在约0.8和1.2之间。 更具体地说，CoFeGe合金基本上仅由根据式（CoxFe（100-x））（100-y）的Co，Fe和Ge组成，其中下标表示原子百分数，x在约45和55之间， y在约23和37之间。
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公开(公告)号：US07466515B2
公开(公告)日：2008-12-16
申请号：US11615885
申请日：2006-12-22
IPC分类号： G11B5/66
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49021 , Y10T29/49044 , Y10T29/49046
摘要： A magnetic medium for perpendicular magnetic data recording. The magnetic medium has a magnetically soft under-layer and a magnetically harder top layer. The magnetic under-layer has a magnetic anisotropy that is oriented in a radial direction relative to the magnetic medium. The magnetic anisotropy is induced by an anisotropic texture on the surface of the magnetic underlayer.
摘要翻译： 用于垂直磁数据记录的磁介质。 该磁性介质具有磁软的底层和磁性较硬的顶层。 磁性底层具有相对于磁性介质沿径向定向的磁各向异性。 磁各向异性由磁性底层表面上的各向异性结构引起。
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130.发明授权Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having segregated grains of a ferromagnetic material and additive Cu, Au or Ag 失效电流垂直于平面（CPP）磁阻传感器，具有反平行钉扎结构，具有铁磁材料和添加剂Cu，Au或Ag的分离晶粒公开(公告)号：US07450350B2
公开(公告)日：2008-11-11
申请号：US11216746
申请日：2005-08-30
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure, i.e., a structure with first (AP1) and second (AP2) ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer with the magnetization directions of AP1 and AP2 oriented substantially antiparallel. The AP2 ferromagnetic layer (the layer in contact with the SV spacer layer) is an alloy of a ferromagnetic material and one or more additive elements of Cu, Au and Ag. The additive elements reduce the magnetic moment of the AP2 layer, which enables its thickness to be increased so that its magnetic moment remains close to the magnetic moment of the AP1 ferromagnetic layer. The thicker AP2 layer allows for more bulk spin-dependent scattering of electrons which increases the magnetoresistance of the sensor. An annealed AP2 layer results in more segregation of the ferromagnetic material grains and the additive element grains, and thus a further improvement in magnetoresistance as a result of more interfacial scattering of electrons.
摘要翻译： 电流垂直于平面的自旋阀（CPP-SV）磁阻传感器具有改进的反平行（AP）钉扎结构，即，具有第一（AP 1）和第二（AP 2）铁磁层的结构，其被 具有AP 1和AP 2的磁化方向基本上反平行取向的非磁性反平行耦合（APC）层。 AP 2铁磁层（与SV间隔层接触的层）是铁磁材料和Cu，Au和Ag的一种或多种添加元素的合金。 添加元素降低了AP 2层的磁矩，使其厚度增加，使其磁矩保持接近AP 1铁磁层的磁矩。 较厚的AP 2层允许电子的更多的体自旋依赖性散射，这增加了传感器的磁阻。 退火的AP 2层导致铁磁材料晶粒和添加元素晶粒的更多偏析，并且因此由于电子的更多界面散射而导致的磁阻的进一步改善。
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