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公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。
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公开(公告)号：US06834026B2
公开(公告)日：2004-12-21
申请号：US10626362
申请日：2003-07-23
IPC分类号： G11B1100
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/0021 , Y10T428/24802
摘要： A magnetic recording medium for thermally-assisted recording is a bilayer of a high-coercivity, high-anisotropy ferromagnetic material like FePt and a switching material like FeRh or Fe(RhM) (where M is Ir, Pt, Ru, Re or Os) that exhibits a switch from antiferromagnetic to ferromagnetic at a transition temperature less than the Curie temperature of the high-coercivity material. The high-coercivity recording layer and the switching layer are exchange coupled ferromagnetically when the switching layer is in its ferromagnetic state. To write data the bilayer medium is heated above the transition temperature of the switching layer. When the switching layer becomes ferromagnetic, the total magnetization of the bilayer is increased, and consequently the switching field required to reverse a magnetized bit is decreased without lowering the anisotropy of the recording layer. The magnetic bit pattern is recorded in both the recording layer and the switching layer. When the media is cooled to below the transition temperature of the switching layer, the switching layer becomes antiferromagnetic and the bit pattern remains in the high-anisotropy recording layer.
摘要翻译： 用于热辅助记录的磁记录介质是诸如FePt的高矫顽力，高各向异性铁磁材料和诸如FeRh或Fe（RhM）（其中M是Ir，Pt，Ru，Re或Os）的开关材料的双层， 其在低于高矫顽力材料的居里温度的转变温度下表现出从反铁磁转变为铁磁。 当高矫顽力记录层和开关层在开关层处于其铁磁状态时，铁磁性交换耦合。 为了写入数据，双层介质被加热到开关层的转变温度之上。 当开关层成为铁磁性时，双层的总磁化强度增加，因此在不降低记录层的各向异性的情况下降低了使磁化位反转所需的切换场。 磁记录层记录在记录层和切换层中。 当介质冷却到切换层的转变温度以下时，开关层变为反铁磁性，并且位图形保留在高各向异性记录层中。
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3.发明申请Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh 有权利用FeRh中的反铁磁性铁磁转变，在MRAM单元中进行热辅助切换公开(公告)号：US20050281081A1
公开(公告)日：2005-12-22
申请号：US10869315
申请日：2004-06-16
申请人： Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。
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4.发明授权Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh 有权利用FeRh中的反铁磁性铁磁转变，在MRAM单元中进行热辅助切换公开(公告)号：US07372116B2
公开(公告)日：2008-05-13
申请号：US10869315
申请日：2004-06-16
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。
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公开(公告)号：US20070253243A1
公开(公告)日：2007-11-01
申请号：US11380498
申请日：2006-04-27
申请人： Robert Fontana , Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Robert Fontana , Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。
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6.发明申请MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER 审中-公开磁记录系统，具有与抗磁反应转移层交换耦合到记录层的介质公开(公告)号：US20080100964A1
公开(公告)日：2008-05-01
申请号：US11553215
申请日：2006-10-26
CPC分类号： G11B5/64 , G11B5/1278 , G11B5/3103
摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.
摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H
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公开(公告)号：US07633718B2
公开(公告)日：2009-12-15
申请号：US11168070
申请日：2005-06-27
摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.
摘要翻译： 公开了EMR元件和制造EMR元件的方法。 EMR结构包括形成有源区的一个或多个层，例如二维电子气（2DEG）。 EMR结构具有第一侧表面，具有从EMR结构的主体向外延伸的多个引线突起和相对的第二侧表面。 引线突起用于形成EMR元件的电流和电压引线。 有源区域延伸穿过每个引线突起，并且可沿着每个引线突起的周边被接近。 沿着每个引线突起的周边形成导电材料，并沿周边与EMR结构的有源区接触。 引线突起和与每个引线突起的有源区接触的相应的导电材料形成用于EMR元件的引线，例如电流引线和电压引线。
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![Narrow track extraordinary magneto resistive [EMR] device](/abs-image/US/2007/11/13/US07295406B2/abs.jpg.150x150.jpg)
公开(公告)号：US07295406B2
公开(公告)日：2007-11-13
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。
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公开(公告)号：US07203036B2
公开(公告)日：2007-04-10
申请号：US10909122
申请日：2004-07-30
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce A. Gurney , Stefan Maat , Ernesto E. Marinero
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/095
摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.
摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。
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公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。
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