Abstract:
A novel insulating apparatus for a conductive line is disclosed. The proposed insulating apparatus can be applied to various conductive lines with different shapes. The problem of short circuit can be solved by the present insulating apparatus with the novel connecting configuration. The present invention comprises a plurality of insulator rings worn on the conductive line in series, wherein the insulator rings are annular cylinders. Each of the annular cylinders has an outer diameter larger than the inner diameter of the ones next to it. In addition, each of the annular cylinders has a length sized according to the desired flexibility of the conductive line.
Abstract:
A method for controlling the implantation of ions into a target. An ion source chamber having a filament for causing evolution of the ions to be implanted is provided. An ion source reactant gas is provided for providing a source of the ion species to be implanted. A counteracting gas is provided to counter the chemical transport from or to the filament depending on the reaction between the ion source gas ions and the filament and to compensate for the reaction. The ion source reactant is introduced into the ion source chamber. Parameters regarding electrical or physical characteristics of the filament are measured. The counteracting gas is introduced based upon the measured parameters, wherein the counteracting gas forms ions to compensate for removal or deposition of material on the filament. The ions to be implanted are extracted from ion source chamber and directed to the target.
Abstract:
An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.
Abstract:
An improved ion source assembly in an ion implant machine is provided that can withstand thermal stress and remain gas leak proof. The ion source assembly is comprised of a vaporizer with a tubular conduit at one end, a fitting, and an arc chamber. The improvement being leak-proof connections: (1) between the conduit and the fitting and (2) between the fitting and an arc chamber. The fitting has a chamber through the center. The chamber has a larger diameter at the back end than at the front end and a central tapered portion connecting the front end and back end portions. The conduit is fit into the back end of the chamber thereby forming a first gas leak proof connection. The fitting has an outer tapered from end portion and the arc chamber has a tapered opening. The tapered front end of the fitting engages the tapered opening of the arc chamber forming a second gas leak proof connection thereby providing a gas leak proof ion source assembly.
Abstract:
A structure and method of accurately positioning and aligning an extraction member aperture (arc slit) and an extraction electrode gap with a predetermined beam line in an ion implantation apparatus is disclosed. The extraction member aperture is positioned with respect the ion beam source housing thereby eliminating cumulative tolerance errors which plague prior art ion implantation apparatuses. A removable alignment fixture is used in conjunction with a self-centering clamping assembly to accurately position the extraction member aperture in alignment with the predetermined beam line. The extraction member is secured to a support ring of the clamping assembly and the clamping assembly is mounted to the alignment fixture. The alignment fixture is mounted to the source housing precisely aligning the extraction member aperture with the predetermined beam line. The split ring of the clamping assembly is secured to a support tube surrounding the ion generating arc chamber. Since the clamping assembly is self centering, the alignment of the extraction member aperture is not compromised. The alignment fixture is then removed. After removal of the alignment fixture, a variable gap extraction electrode assembly is secured to the source housing. A machining fixture is used during fabrication and assembly of the extraction electrode assembly to insure that the electrode gap is aligned with the predetermined beam line when the extraction electrode assembly is mounted to the source housing.
Abstract:
Within an ion implanter, a source element or filament may be cured outside of the ion implanter. This may be accomplished within a vacuum chamber using the same source assembly or canister to hold the filament as is used within the ion implanter. The filament within the source canister is inserted into the vacuum chamber and a vacuum is produced at a first set point. Then, the current is gradually increased while monitoring the pressure compared to a second set point. The current is decreased where the second pressure set point is reached to prevent oxidation. Where the chamber pressure is below the second set point, the current is allowed to increase. The curing of the filament is indicated when the filament increases to the third set point, without chamber pressure exceeding the second set point.
Abstract:
A cooled plasma source for producing ions by electrical discharge. A cooled plate is positioned in the chamber of the plasma source for blocking thermal radiation from an electron-emitting cathode. The presence of the cooled plate results in significantly decreased substrate temperatures, as compared to use of conventional plasma source apparatus. As a result, the cooled plasma source may be used for treatment of heat-sensitive plastic substrates.
Abstract:
A grid assembly for ion beam sources includes grid structures that are etched from a semiconductor wafer using microelectronic fabrication techniques with the grid structures constrained in an aligned manner by a ceramic carrier having embedded electrically conductive pads for effecting electrical contact with the grid structures. The grid structures are fabricated by creating oxide and photoresist layers on a starting silicon wafer and exposing the photoresist through a mask carrying the aperture pattern. After the photoresist is developed, the oxide layer is etched to form openings therethrough and the silicon wafer is anisotropically etched from both sides with the etching proceeding anisotropically so that the {111} planes are etched to form the apertures in which the {111} planes face each other across the aperture with opposite {111} planes at a 90.degree. angle relative to one another to provide a plurality of apertures each defining a volume in the form of an inverted truncated 4-sided pyramid. The ceramic carrier is assembled as a preform from a flexible Al.sub.2 O.sub.3 /polymer dielectric tape and is initially fabricated by cutting the various laminae L.sub.1, L.sub.2, L.sub.n-1, . . . L.sub.n into the desired configuration and assembling the laminae in a stacked configuration for burnout and firing to form a unitary ceramic carrier. The etchant formed grids are cemented into place in the carrier with an electrically conductive high-temperature cement.
Abstract:
To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a predetermined criterion is met.
Abstract:
A vacuum is maintained inside a vacuum partition (1). The whole of the solid packed container (3) is disposed inside the vacuum partition (1). A heater (7) sublimates the aluminum chloride (8) packed in the solid packed container (3) to generate an aluminum chloride gas (9). An arc chamber (6) ionizes the aluminum chloride gas (9) and emits an ion beam (11) of the ionized aluminum chloride gas (9). A gas supply nozzle (10) leads the aluminum chloride gas (9) from the solid packed container (3) into the arc chamber (6). A supporting part (4) supports and fixes the solid packed container (3) on the vacuum partition (1). A thermal conductivity of the supporting part (4) is lower than thermal conductivities of the vacuum partition (1) and the solid packed container (3).