Insulating apparatus for a conductive line
    121.
    发明授权
    Insulating apparatus for a conductive line 失效
    导线绝缘装置

    公开(公告)号:US06291827B1

    公开(公告)日:2001-09-18

    申请号:US09276865

    申请日:1999-03-26

    CPC classification number: H01J37/3171 H01J2237/08

    Abstract: A novel insulating apparatus for a conductive line is disclosed. The proposed insulating apparatus can be applied to various conductive lines with different shapes. The problem of short circuit can be solved by the present insulating apparatus with the novel connecting configuration. The present invention comprises a plurality of insulator rings worn on the conductive line in series, wherein the insulator rings are annular cylinders. Each of the annular cylinders has an outer diameter larger than the inner diameter of the ones next to it. In addition, each of the annular cylinders has a length sized according to the desired flexibility of the conductive line.

    Abstract translation: 公开了一种用于导线的新型绝缘装置。 所提出的绝缘装置可以应用于具有不同形状的各种导线。 本发明的绝缘装置具有新颖的连接结构,可以解决短路问题。 本发明包括串联在导线上的多个绝缘体环,其中绝缘环是环形圆筒。 每个环形圆柱体的外径大于其旁边的内径。 此外,每个环形圆柱体具有根据导电线的期望的柔性来定尺寸的长度。

    Method for extended ion implanter source lifetime with control mechanism
    122.
    发明授权
    Method for extended ion implanter source lifetime with control mechanism 失效
    延长离子注入机源寿命与控制机制的方法

    公开(公告)号:US5943594A

    公开(公告)日:1999-08-24

    申请号:US915206

    申请日:1997-08-20

    CPC classification number: H01J27/08 H01J37/3171 H01J2237/08 Y10S438/919

    Abstract: A method for controlling the implantation of ions into a target. An ion source chamber having a filament for causing evolution of the ions to be implanted is provided. An ion source reactant gas is provided for providing a source of the ion species to be implanted. A counteracting gas is provided to counter the chemical transport from or to the filament depending on the reaction between the ion source gas ions and the filament and to compensate for the reaction. The ion source reactant is introduced into the ion source chamber. Parameters regarding electrical or physical characteristics of the filament are measured. The counteracting gas is introduced based upon the measured parameters, wherein the counteracting gas forms ions to compensate for removal or deposition of material on the filament. The ions to be implanted are extracted from ion source chamber and directed to the target.

    Abstract translation: 一种用于控制将离子注入到靶中的方法。 提供了具有用于使待离子离子注入的细丝的离子源室。 离子源反应气体被提供用于提供待植入的离子种类的源。 根据离子源气体离子和细丝之间的反应,提供反作用气体以抵抗或转移到细丝的化学传输并补偿反应。 将离子源反应物引入离子源室。 测量关于灯丝的电学或物理特性的参数。 基于测量的参数引入反作用气体,其中反作用气体形成离子以补偿细丝上的材料的去除或沉积。 待植入的离子从离子源室中提取并引导到靶。

    Fitting for an ion source assembly
    124.
    发明授权
    Fitting for an ion source assembly 失效
    适用于离子源组件

    公开(公告)号:US5604350A

    公开(公告)日:1997-02-18

    申请号:US558494

    申请日:1995-11-16

    Applicant: Chung-Hua Chu

    Inventor: Chung-Hua Chu

    CPC classification number: H01J27/022 H01J2237/08 H01J2237/31701

    Abstract: An improved ion source assembly in an ion implant machine is provided that can withstand thermal stress and remain gas leak proof. The ion source assembly is comprised of a vaporizer with a tubular conduit at one end, a fitting, and an arc chamber. The improvement being leak-proof connections: (1) between the conduit and the fitting and (2) between the fitting and an arc chamber. The fitting has a chamber through the center. The chamber has a larger diameter at the back end than at the front end and a central tapered portion connecting the front end and back end portions. The conduit is fit into the back end of the chamber thereby forming a first gas leak proof connection. The fitting has an outer tapered from end portion and the arc chamber has a tapered opening. The tapered front end of the fitting engages the tapered opening of the arc chamber forming a second gas leak proof connection thereby providing a gas leak proof ion source assembly.

    Abstract translation: 提供了一种离子注入机器中改进的离子源组件,可以承受热应力并保持防漏气。 离子源组件包括在一端具有管状导管的蒸发器,配件和电弧室。 改进是防漏连接:(1)导管和配件之间以及(2)配件和电弧室之间。 配件有通过中心的室。 该腔室在后端具有比前端更大的直径和连接前端部和后端部分的中心锥形部分。 导管配合到室的后端,从而形成第一气体泄漏连接。 配件具有从端部部分的外锥形,并且电弧室具有锥形开口。 配件的锥形前端接合电弧室的锥形开口形成第二气体泄漏连接,由此提供防气体泄漏离子源组件。

    Structure for alignment of an ion source aperture with a predetermined
ion beam path
    125.
    发明授权
    Structure for alignment of an ion source aperture with a predetermined ion beam path 失效
    离子源孔径与预定离子束路径对准的结构

    公开(公告)号:US5420415A

    公开(公告)日:1995-05-30

    申请号:US267437

    申请日:1994-06-29

    Inventor: Frank R. Trueira

    CPC classification number: H01J37/15 H01J2237/08 H01J2237/31701

    Abstract: A structure and method of accurately positioning and aligning an extraction member aperture (arc slit) and an extraction electrode gap with a predetermined beam line in an ion implantation apparatus is disclosed. The extraction member aperture is positioned with respect the ion beam source housing thereby eliminating cumulative tolerance errors which plague prior art ion implantation apparatuses. A removable alignment fixture is used in conjunction with a self-centering clamping assembly to accurately position the extraction member aperture in alignment with the predetermined beam line. The extraction member is secured to a support ring of the clamping assembly and the clamping assembly is mounted to the alignment fixture. The alignment fixture is mounted to the source housing precisely aligning the extraction member aperture with the predetermined beam line. The split ring of the clamping assembly is secured to a support tube surrounding the ion generating arc chamber. Since the clamping assembly is self centering, the alignment of the extraction member aperture is not compromised. The alignment fixture is then removed. After removal of the alignment fixture, a variable gap extraction electrode assembly is secured to the source housing. A machining fixture is used during fabrication and assembly of the extraction electrode assembly to insure that the electrode gap is aligned with the predetermined beam line when the extraction electrode assembly is mounted to the source housing.

    Abstract translation: 公开了一种在离子注入装置中精确地定位和对准提取构件孔(电弧狭缝)和预定束线的引出电极间隙的结构和方法。 提取构件孔相对于离子束源壳体定位,从而消除了与现有技术的离子注入装置相啮合的累积容错误差。 可拆卸对准夹具与自定心夹紧组件一起使用,以将抽出构件孔准确地定位成与预定束线对齐。 提取构件固定到夹紧组件的支撑环上,并且夹紧组件安装到对准夹具上。 对准夹具安装到源壳体上,使提取构件孔与预定的束线精确地对准。 夹紧组件的开口环固定到围绕离子产生电弧室的支撑管上。 由于夹紧组件是自对中的,所以提取构件孔的对准不受影响。 然后拆下对准夹具。 在移除对准夹具之后,可变间隙引出电极组件被固定到源壳体。 在提取电极组件的制造和组装期间使用加工夹具,以确保当提取电极组件安装到源壳体时电极间隙与预定的束线对准。

    Curing of a tungsten filament in an ion implanter
    126.
    发明授权
    Curing of a tungsten filament in an ion implanter 失效
    在离子注入机中固化钨丝

    公开(公告)号:US5370568A

    公开(公告)日:1994-12-06

    申请号:US030980

    申请日:1993-03-12

    CPC classification number: H01J27/022 H01J9/445 H01J2237/08 H01J2237/31701

    Abstract: Within an ion implanter, a source element or filament may be cured outside of the ion implanter. This may be accomplished within a vacuum chamber using the same source assembly or canister to hold the filament as is used within the ion implanter. The filament within the source canister is inserted into the vacuum chamber and a vacuum is produced at a first set point. Then, the current is gradually increased while monitoring the pressure compared to a second set point. The current is decreased where the second pressure set point is reached to prevent oxidation. Where the chamber pressure is below the second set point, the current is allowed to increase. The curing of the filament is indicated when the filament increases to the third set point, without chamber pressure exceeding the second set point.

    Abstract translation: 在离子注入机内,源元件或细丝可以在离子注入机的外部固化。 这可以在真空室内完成,使用相同的源组件或罐来保持细丝,如在离子注入机内使用的那样。 源筒内的细丝被插入真空室中,并且在第一设定点产生真空。 然后,当与第二设定点相比监测压力时,电流逐渐增加。 在达到第二压力设定点以防止氧化时,电流减小。 当室压力低于第二设定点时,允许电流增加。 当灯丝增加到第三设定点时,灯丝的固化指示,而室压力超过第二设定点。

    Cooled plasma source
    127.
    发明授权
    Cooled plasma source 失效
    冷却等离子体源

    公开(公告)号:US5256930A

    公开(公告)日:1993-10-26

    申请号:US833049

    申请日:1992-02-10

    CPC classification number: H05H1/24 H01J27/022 H01J2237/08 H01J2237/31

    Abstract: A cooled plasma source for producing ions by electrical discharge. A cooled plate is positioned in the chamber of the plasma source for blocking thermal radiation from an electron-emitting cathode. The presence of the cooled plate results in significantly decreased substrate temperatures, as compared to use of conventional plasma source apparatus. As a result, the cooled plasma source may be used for treatment of heat-sensitive plastic substrates.

    Abstract translation: 用于通过放电产生离子的冷却等离子体源。 冷却板位于等离子体源的腔室中,用于阻挡来自电子发射阴极的热辐射。 与使用常规等离子体源装置相比,冷却板的存在导致显着降低的基板温度。 结果,冷却的等离子体源可以用于热敏塑料基板的处理。

    Grid assembly for ion beam sources and method therefor
    128.
    发明授权
    Grid assembly for ion beam sources and method therefor 失效
    用于离子束源的栅组件及其方法

    公开(公告)号:US5177398A

    公开(公告)日:1993-01-05

    申请号:US530857

    申请日:1990-05-31

    Inventor: Jurgen Engemann

    CPC classification number: H01J9/14 H01J27/022 H01J37/09 H01J2237/08

    Abstract: A grid assembly for ion beam sources includes grid structures that are etched from a semiconductor wafer using microelectronic fabrication techniques with the grid structures constrained in an aligned manner by a ceramic carrier having embedded electrically conductive pads for effecting electrical contact with the grid structures. The grid structures are fabricated by creating oxide and photoresist layers on a starting silicon wafer and exposing the photoresist through a mask carrying the aperture pattern. After the photoresist is developed, the oxide layer is etched to form openings therethrough and the silicon wafer is anisotropically etched from both sides with the etching proceeding anisotropically so that the {111} planes are etched to form the apertures in which the {111} planes face each other across the aperture with opposite {111} planes at a 90.degree. angle relative to one another to provide a plurality of apertures each defining a volume in the form of an inverted truncated 4-sided pyramid. The ceramic carrier is assembled as a preform from a flexible Al.sub.2 O.sub.3 /polymer dielectric tape and is initially fabricated by cutting the various laminae L.sub.1, L.sub.2, L.sub.n-1, . . . L.sub.n into the desired configuration and assembling the laminae in a stacked configuration for burnout and firing to form a unitary ceramic carrier. The etchant formed grids are cemented into place in the carrier with an electrically conductive high-temperature cement.

    Abstract translation: 用于离子束源的栅格组件包括使用微电子制造技术从半导体晶片蚀刻的栅格结构,栅格结构通过具有嵌入的导电焊盘的陶瓷载体以对准的方式约束,以实现与栅格结构的电接触。 通过在起始硅晶片上产生氧化物和光致抗蚀剂层并通过携带孔径图案的掩模曝光光致抗蚀剂来制造栅格结构。 在光致抗蚀剂显影后,蚀刻氧化物层以形成开口,并且从各侧各向异性地蚀刻硅晶片,同时以各向异性进行蚀刻,使得{111}面被蚀刻以形成其中{111}面 相对于彼此以90度角相对地穿过具有相对的{111}平面的孔径彼此面对,以提供多个孔,每个孔限定呈倒截的四边形金字塔形式的体积。 陶瓷载体由柔性Al2O3 /聚合物电介质胶带组装成预成型体,最初通过切割各种薄片L1,L2,Ln-1来制造。 。 。 Ln进入所需的构造并将层组装成堆叠构造,用于烧尽和烧制以形成一体的陶瓷载体。 形成网格的蚀刻剂用导电高温水泥胶合到载体中。

    Ion implantation apparatus
    130.
    发明授权

    公开(公告)号:US10043635B2

    公开(公告)日:2018-08-07

    申请号:US15320104

    申请日:2014-09-25

    Inventor: Sunao Aya

    Abstract: A vacuum is maintained inside a vacuum partition (1). The whole of the solid packed container (3) is disposed inside the vacuum partition (1). A heater (7) sublimates the aluminum chloride (8) packed in the solid packed container (3) to generate an aluminum chloride gas (9). An arc chamber (6) ionizes the aluminum chloride gas (9) and emits an ion beam (11) of the ionized aluminum chloride gas (9). A gas supply nozzle (10) leads the aluminum chloride gas (9) from the solid packed container (3) into the arc chamber (6). A supporting part (4) supports and fixes the solid packed container (3) on the vacuum partition (1). A thermal conductivity of the supporting part (4) is lower than thermal conductivities of the vacuum partition (1) and the solid packed container (3).

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