公开(公告)号：US20250029816A1

公开(公告)日：2025-01-23

申请号：US18773859

申请日：2024-07-16

Applicant: Applied Materials, Inc.

Inventor： Douglas Long ,  Vinod Kumar Konda Purathe ,  Dien-Yeh Wu ,  Jallepally Ravi ,  Hideaki Goto ,  Manjunatha Koppa ,  Hiroyuki Takahama ,  Shih Yao Hsu ,  Sandesh Yadamane Dharmaiah

IPC: H01J37/32 ,  C23C16/455

Abstract: Gas distribution assemblies for a semiconductor manufacturing processing chamber comprising a first showerhead with a first flange and a second showerhead with a second flange. A first two-piece RF isolator comprises a first inner RF isolator spaced from a first outer RF isolator. The first inner RF isolator spaced from the first flange of the first showerhead to create a first flow path. A second two-piece RF isolator comprises a second inner RF isolator spaced from a second outer RF isolator. The second RF isolator spaced from the second flange of the second showerhead to create a second flow path. Processing chambers incorporating the gas distribution assemblies, and processing methods using the gas distribution assemblies are also described.

公开(公告)号：US20250027195A1

公开(公告)日：2025-01-23

申请号：US18223199

申请日：2023-07-18

Applicant: Applied Materials, Inc.

Inventor： Yogesh Tomar ,  Nikshep Patil ,  Kirubanandan Shanmugam Naina ,  Hanish Kumar Panavalappil Kumarankutty ,  Gayatri Natu ,  Mahesh Chelvaraj Arcot ,  Senthil Kumar Nattamai Subramanian ,  Hari Venkatesh Rajendran ,  Michael Rice ,  Christopher Laurent Beaudry

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

公开(公告)号：US12207458B2

公开(公告)日：2025-01-21

申请号：US17680993

申请日：2022-02-25

Applicant: Applied Materials, Inc.

Inventor： Fredrick David Fishburn

IPC: H10B12/00

Abstract: Methods for forming 3D DRAM leverage L-pad formations to increase memory density. Methods may include etching a substrate to form two Si walls oriented parallel to each other and forming a space therebetween, depositing a plurality of alternating Si layers and SiGe layers using epitaxial growth processes to form horizontal deposition layers on the space between the two Si walls and vertical deposition layers on sidewalls of the two Si walls, depositing a CMP stop layer on the substrate, planarizing the substrate to the CMP stop layer, removing a portion of a top of the two Si walls and forming an L-pad formation, deep etching a pattern of holes into the space between the two Si walls in horizontal portions of the plurality of alternating Si layers and SiGe layers, and forming vertical wordline structures from the pattern of holes in the horizontal portions.

公开(公告)号：US12205845B2

公开(公告)日：2025-01-21

申请号：US17078520

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Tsutomu Tanaka ,  Adam J. Fischbach ,  Abhijit A. Kangude ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/02 ,  H01L21/683

Abstract: Exemplary processing systems may include a chamber body. The systems may include a pedestal configured to support a semiconductor substrate. The systems may include a faceplate. The chamber body, the pedestal, and the faceplate may define a processing region. The faceplate may be coupled with an RF power source. The systems may include a remote plasma unit. The remote plasma unit may be coupled at electrical ground. The systems may include a discharge tube extending from the remote plasma unit towards the faceplate. The discharge tube may define a central aperture. The discharge tube may be electrically coupled with each of the faceplate and the remote plasma unit. The discharge tube may include ferrite extending about the central aperture of the discharge tube.

公开(公告)号：US12205818B2

公开(公告)日：2025-01-21

申请号：US18606060

申请日：2024-03-15

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US20250022709A1

公开(公告)日：2025-01-16

申请号：US18899930

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Bushra AFZAL ,  Sungwon HA ,  Vinay K. PRABHAKAR ,  Viren KALSEKAR ,  Satya THOKACHICHU ,  Edward P. HAMMOND, IV

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/46 ,  C23C16/505 ,  H01L21/02

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 Å/min, such as up to about 10,000 Å/min or faster.

公开(公告)号：US20250020921A1

公开(公告)日：2025-01-16

申请号：US18769069

申请日：2024-07-10

Applicant: Applied Materials, Inc.

Inventor： Jinxin FU ,  Sihui HE

IPC: G02B27/01

Abstract: Embodiments described herein relate to an augmented reality (AR) system. The AR system includes a projection system and an optical device. The projection system includes a backlight, a lens, and an illumination system. The illumination system is configured to receive light from the backlight and emit light having a first color trend. The light having a first color trend is emitted through the lens towards the optical device. The optical device is configured to form a second color trend. The second color trend is opposite the first color trend.

公开(公告)号：US20250019824A1

公开(公告)日：2025-01-16

申请号：US18717165

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Jong Yun Kim ,  William Nehrer ,  Sang Jeong Oh ,  Han Byoul Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/505

Abstract: Exemplary substrate processing chambers may include a chamber body defining a processing region. The chambers may include a backing plate disposed atop the chamber body, a diffuser above the processing region and supported by the backing plate, and a cooling frame disposed between the backing plate and the diffuser. The cooling frame may be coupled with the diffuser. The cooling frame may include a body having one or more fluid inlets and one or more fluid outlets. The body may define an opening. The fluid inlets may be in fluid communication with the one or more fluid outlets via one or more fluid lumens that each extend at least partially about a periphery of the opening. The fluid inlets may be in fluid communication with one or more fluid supply lumens. The fluid outlets may be in fluid communication with one or more fluid return lumens.

公开(公告)号：US12198951B2

公开(公告)日：2025-01-14

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Adib Khan ,  Venkata Ravishankar Kasibhotla ,  Sultan Malik ,  Sean S. Kang ,  Keith Tatseun Wong

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/687 ,  H01L21/768

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US12198925B2

公开(公告)日：2025-01-14

申请号：US18074849

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.