公开(公告)号：US07335960B2

公开(公告)日：2008-02-26

申请号：US11179252

申请日：2005-07-12

Applicant: Cherng-Chyi Han ,  Liubo Hong

Inventor： Cherng-Chyi Han ,  Liubo Hong

IPC: H01L43/00

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.

Abstract translation: 一种用于形成MRAM单元结构的方法，其中单元的形貌基本上是平坦的，并且位线和无磁性层，字线和无磁性层或字线以及位线和无磁层之间的距离 是精确和良好的控制。 该方法包括形成MTJ膜堆叠，在其上形成封盖层和牺牲层。 堆叠通过常规方式图案化，然后被由CMP稀疏以暴露牺牲层的剩余部分的绝缘层覆盖。 可以通过蚀刻工艺精确地去除牺牲层的剩余部分，仅留下孔尺寸的覆盖层以将位线与无磁性层和封盖层分离。 位线和绝缘层的绝缘层以同样精确和受控的方式将自由层与字线分开。

公开(公告)号：US07320168B2

公开(公告)日：2008-01-22

申请号：US10696431

申请日：2003-10-29

Applicant: Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

Inventor： Cherng-Chyi Han ,  Rod Lee ,  Mao-Min Chen ,  Pokang Wang

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3136 ,  G11B5/3133 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Problems such as thermal pole tip protrusion result from thermal mismatch between the alumina and pole material during the writing process. This, and similar problems due to inadequate heat dissipation, have been overcome by dividing the bottom shield into two pieces both of which sit on top of a non-magnetic heat sink. Heat generated by the coil during writing is transferred to the non-magnetic heat sink whence it gets transferred to the substrate. With this approach, the head not only benefits from less field disturbance due to the small shield but also improves heat dissipation from the additional heat sink.

Abstract translation: 在写入过程中，由于氧化铝和极材料之间的热失配，导致热极尖突出的问题。 通过将底部屏蔽分成两个位于非磁性散热器顶部的两个部件，已经克服了由于不充分散热引起的这种和类似的问题。 在写入期间由线圈产生的热量被传递到非磁性散热器，因为它被传送到基板。 采用这种方法，由于小屏蔽，头部不但受益于较少的场干扰，还可以改善附加散热器的散热。

公开(公告)号：US07047625B2

公开(公告)日：2006-05-23

申请号：US10647762

申请日：2003-08-25

Applicant: Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

Inventor： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/295 ,  G11B5/11 ,  G11B5/17 ,  G11B5/1871 ,  Y10T29/49002 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

Abstract translation: 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。 然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

公开(公告)号：US07035060B2

公开(公告)日：2006-04-25

申请号：US10091959

申请日：2002-03-06

Applicant: Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

Inventor： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

IPC: G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US07022383B2

公开(公告)日：2006-04-04

申请号：US10277477

申请日：2002-10-22

Applicant: Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

Inventor： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Mao-Min Chen

IPC: B05D3/06 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Although it is known that exchange bias can be utilized in abutted junctions for longitudinal stabilization, a relatively large moment is needed to pin down the sensor edges effectively. Due to the inverse dependence of the exchange bias on the magnetic layer thickness, a large exchange bias has been difficult to achieve by the prior art. This problem has been solved by introducing a structure in which the magnetic moment of the bias layer has been approximately doubled by pinning it from both above and below through exchange with antiferromagnetic layers. Additionally, since the antiferromagnetic layer is in direct abutted contact with the free layer, it acts directly to help stabilize the sensor edge, which is an advantage over the traditional magnetostatic pinning that had been used.

公开(公告)号：US20060007602A1

公开(公告)日：2006-01-12

申请号：US10886888

申请日：2004-07-08

Applicant: Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

Inventor： Cherng-Chyi Han ,  Laurie Lauchlan ,  Xiaomin Liu

IPC: G11B5/235 ,  G11B5/147 ,  G11B5/127 ,  G11B5/33

CPC classification number: G11B5/3163 ,  G11B5/1272 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: For high track density recording, tighter reader and writer track width control are essential. This has been achieved by using the write gap layer as the plating seed on which the upper pole is electro-formed. This allows the write gap layer to be deposited through a precisely controllable process such as sputtering. Since less material needs to be removed during pole trimming, a thinner layer of photoresist may be used. This, in turn, makes possible a lower CD for the structure.

Abstract translation: 对于高轨道密度记录，更紧密的读写器轨道宽度控制是至关重要的。 这是通过使用写间隙层作为上电极电镀的电镀种子来实现的。 这允许通过诸如溅射的精确控制的工艺来沉积写间隙层。 由于在极修整期间需要去除更少的材料，所以可以使用更薄的光致抗蚀剂层。 这反过来，使得结构的CD更低。

公开(公告)号：US20050264954A1

公开(公告)日：2005-12-01

申请号：US10854651

申请日：2004-05-26

Applicant: Min Li ,  Cheng Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

Inventor： Min Li ,  Cheng Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC: G11B5/39 ,  G11B5/127 ,  G11B5/33 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H04R31/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

Abstract translation: 通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US06969895B2

公开(公告)日：2005-11-29

申请号：US10732013

申请日：2003-12-10

Applicant: Cherng-Chyi Han ,  Liubo Hong

Inventor： Cherng-Chyi Han ,  Liubo Hong

IPC: H01F10/32 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.

公开(公告)号：US20050248980A1

公开(公告)日：2005-11-10

申请号：US11179252

申请日：2005-07-12

Applicant: Cherng-Chyi Han ,  Liubo Hong

Inventor： Cherng-Chyi Han ,  Liubo Hong

IPC: H01F10/32 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/12

Abstract: A method for forming MRAM cell structures wherein the topography of the cell is substantially flat and the distance between a bit line and a magnetic free layer, a word line and a magnetic free layer or a word line and a bit line and a magnetic free layer is precise and well controlled. The method includes the formation of an MTJ film stack over which is formed both a capping and sacrificial layer. The stack is patterned by conventional means, then is covered by a layer of insulation which is thinned by CMP to expose a remaining portion of the sacrificial layer. The remaining portion of the sacrificial layer can be precisely removed by an etching process, leaving only the well dimensioned capping layer to separate the bit line from the magnetic free layer and the capping layer. The bit line and an intervening layer of insulation separate the free layer from a word line in an equally precise and controlled manner.

Abstract translation: 一种用于形成MRAM单元结构的方法，其中单元的形貌基本上是平坦的，并且位线和无磁性层，字线和无磁性层或字线以及位线和无磁层之间的距离 是精确和良好的控制。 该方法包括形成MTJ膜堆叠，在其上形成封盖层和牺牲层。 堆叠通过常规方式图案化，然后被由CMP稀疏以暴露牺牲层的剩余部分的绝缘层覆盖。 可以通过蚀刻工艺精确地去除牺牲层的剩余部分，仅留下孔尺寸的覆盖层以将位线与无磁性层和封盖层分离。 位线和绝缘层的绝缘层以同样精确和受控的方式将自由层与字线分开。

公开(公告)号：US06960281B2

公开(公告)日：2005-11-01

申请号：US10394098

申请日：2003-03-21

Applicant: Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

Inventor： Cherng-Chyi Han ,  Mao-Min Chen ,  Po Kang Wang ,  Fenglin Liu

IPC: G11B5/31 ,  G11B5/39 ,  C23C14/34

CPC classification number: G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

Abstract: A method for forming a trimmed upper pole piece for a magnetic write head, said pole piece having a tapered profile that is widest at its trailing edge. Such a pole piece is capable of writing narrow tracks with sharply and well defined patterns and minimal overwriting of adjacent tracks. The present method produces the necessary taper by using NiCr, NiFeCr, Rh or Ru as write gap filling materials which have an etch rate which is substantially equal to the etch rate of the other layers forming the pole piece and are highly corrosion resistant. As a result, the write gap does not protrude to mask the effects of the ion-beam etch used to form the taper.

Abstract translation: 一种用于形成用于磁性写入头的修整的上极片的方法，所述极片具有在其后缘处最宽的锥形轮廓。 这样的极片能够以清晰明确的图案和相邻轨迹的最小重写来写入窄轨道。 本方法通过使用NiCr，NiFeCr，Rh或Ru作为写入间隙填充材料产生必要的锥度，其具有基本上等于形成极片的其它层的蚀刻速率的蚀刻速率，并且具有高耐腐蚀性。 结果，写入间隙不突出以掩盖用于形成锥形的离子束蚀刻的效果。