Non-volatile solid state resistive switching devices

    公开(公告)号:US10134985B2

    公开(公告)日:2018-11-20

    申请号:US11875541

    申请日:2007-10-19

    申请人: Wei Lu Sung Hyun Jo

    发明人: Wei Lu Sung Hyun Jo

    IPC分类号: H01L47/00 H01L45/00 H01L27/24

    摘要: Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer.

    INFORMATION NOTIFICATION DEVICE FOR VEHICLE
    132.
    发明申请

    公开(公告)号:US20180154827A1

    公开(公告)日:2018-06-07

    申请号:US15594069

    申请日:2017-05-12

    申请人: KWANG HYUN JO

    发明人: KWANG HYUN JO

    IPC分类号: B60Q1/52

    摘要: Disclosed herein is an information notification device for a vehicle. The information notification device for a vehicle is a vehicle-mounted safety product, and enables shapes and characters or the like, adapted to indicate a direction, to be displayed in various manners by opening the trunk of a vehicle when a breakdown or accident of the vehicle has occurred, and thus the driver of the following vehicle can be rapidly and accurately notified of the emergency situation and a traffic lane to and along which the following vehicle needs to switch its lane and to travel can be indicated by a directional sign, thereby enabling the driver of the following vehicle to more safely and rapidly deal with the emergency situation.

    Filamentary based non-volatile resistive memory device and method
    134.
    发明授权
    Filamentary based non-volatile resistive memory device and method 有权
    基于长丝的非易失性电阻式存储器件及方法

    公开(公告)号:US08796658B1

    公开(公告)日:2014-08-05

    申请号:US13466008

    申请日:2012-05-07

    IPC分类号: H01L47/00 H01L27/24 H01L45/00

    摘要: A resistive memory device includes a first metallic layer comprising a source of positive metallic ions, a switching media having an upper surface and a lower surface, wherein the upper surface is adjacent to the first metallic layer, wherein the switching media comprises conductive filaments comprising positive metallic ions from the source of positive metallic ions formed from the upper surface towards the lower surface, a semiconductor substrate, a second metallic layer disposed above the semiconductor substrate, a non-metallic conductive layer disposed above the second metallic layer, and an interface region between the non-metallic conductive layer and the switching media having a negative ionic charge.

    摘要翻译: 电阻式存储器件包括包含正金属离子源的第一金属层,具有上表面和下表面的开关介质,其中上表面与第一金属层相邻,其中开关介质包括包含正极的导电细丝 从上表面朝向下表面形成的正金属离子源的金属离子,半导体衬底,设置在半导体衬底上方的第二金属层,设置在第二金属层上方的非金属导电层,以及界面区域 在非金属导电层和具有负离子电荷的开关介质之间。

    Integration of an amorphous silicon resistive switching device
    135.
    发明授权
    Integration of an amorphous silicon resistive switching device 有权
    集成非晶硅电阻开关器件

    公开(公告)号:US08723154B2

    公开(公告)日:2014-05-13

    申请号:US12894057

    申请日:2010-09-29

    摘要: An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device.

    摘要翻译: 集成电路器件。 集成电路器件包括具有表面区域的半导体衬底。 栅极电介质层覆盖在衬底的表面区域上。 该器件包括具有p +有源区的MOS器件。 p +有源区形成用于电阻式开关器件的第一电极。 电阻开关器件包括覆盖p +有源区的非晶硅开关材料和覆盖在第一金属导体结构上的金属电极。 金属电极包括金属材料,当对金属电极施加正偏压时,在非晶硅开关材料中形成金属区域。 MOS器件为集成电路器件提供选择晶体管。

    Communication system and method of performing multi-cell common operation
    136.
    发明授权
    Communication system and method of performing multi-cell common operation 有权
    通信系统和执行多小区通用操作的方法

    公开(公告)号:US08504050B2

    公开(公告)日:2013-08-06

    申请号:US12850682

    申请日:2010-08-05

    IPC分类号: H04W72/00

    CPC分类号: H04W72/048 H04W36/0083

    摘要: A common operating set including a plurality of cells may be set, and common radio resources may be allocated to enable the plurality of cells to perform a multi-cell common operation. Unique uplink radio resources may be allocated to each of terminals in the common operating set within the common radio resources, and each of the terminals may transmit corresponding uplink feedback information to a plurality of base stations based on corresponding unique uplink radio resources. Accordingly, each of the base stations may recognize information associated with a wireless environment between each of terminals and a corresponding base station.

    摘要翻译: 可以设置包括多个小区的公共操作集合,并且可以分配公共无线电资源以使多个小区能够执行多小区公共操作。 唯一的上行链路无线电资源可以被分配给公共无线电资源中的公共操作集合中的每个终端,并且每个终端可以基于相应的唯一上行链路无线电资源向多个基站发送相应的上行链路反馈信息。 因此,每个基站可以识别与每个终端和对应的基站之间的无线环境相关联的信息。

    Hetero resistive switching material layer in RRAM device and method
    138.
    发明授权
    Hetero resistive switching material layer in RRAM device and method 有权
    RRAM装置和方法中的异质电阻开关材料层

    公开(公告)号:US08467227B1

    公开(公告)日:2013-06-18

    申请号:US13290024

    申请日:2011-11-04

    申请人: Sung Hyun Jo

    发明人: Sung Hyun Jo

    IPC分类号: G11C11/00

    摘要: A non-volatile memory device includes a first electrode, a resistive switching material stack overlying the first electrode. The resistive switching material stack comprising a first resistive switching material and a second resistive switching material. The second resistive switching material overlies the first electrode and the first resistive switching material overlying the second resistive switching material. The first resistive switching material is characterized by a first switching voltage having a first amplitude. The second resistive switching material is characterized by a second switching voltage having a second amplitude no greater than the first switching voltage. A second electrode comprising at least a metal material physically and electrically in contact with the first resistive switching material overlies the first resistive switching material.

    摘要翻译: 非易失性存储器件包括第一电极,覆盖第一电极的电阻开关材料堆叠。 电阻开关材料堆叠包括第一电阻开关材料和第二电阻开关材料。 第二电阻开关材料覆盖在第二电阻开关材料上的第一电极和第一电阻开关材料。 第一电阻开关材料的特征在于具有第一幅度的第一开关电压。 第二电阻开关材料的特征在于具有不大于第一开关电压的第二幅度的第二开关电压。 至少包括与第一电阻式开关材料物理和电接触的金属材料的第二电极覆盖在第一电阻开关材料上。

    System and method for information handling system storage device power consumption management
    140.
    发明授权
    System and method for information handling system storage device power consumption management 有权
    信息处理系统和方法存储设备功耗管理

    公开(公告)号:US08327177B2

    公开(公告)日:2012-12-04

    申请号:US12781090

    申请日:2010-05-17

    IPC分类号: G06F1/32

    CPC分类号: G06F1/3215

    摘要: A storage device, such as a hard disk drive or solid state drive, reduces energy consumption by entering a reduced power state after an inactivity time where the inactivity time is set based upon I/O commands received at the storage device. For example, where commands received at a storage device are characterized in a predetermined way in terms of read commands, such as a last received command as a read command or a ratio of read commands versus write commands, a first inactivity time is applied, while commands characterized in a predetermined way in terms of write commands have a second inactivity time applied. Using a greater inactivity time during read activities than during write activities provides improved performance with reduced power consumption.

    摘要翻译: 诸如硬盘驱动器或固态驱动器的存储装置通过在基于在存储装置处接收的I / O命令来设置不活动时间的不活动时间之后进入降低的功率状态来减少能量消耗。 例如,在存储装置处接收的命令以诸如作为读取命令的最后接收的命令或读取命令与写入命令的比率的读取命令的预定方式进行表征时,应用第一不活动时间,而 在写入命令方面以预定方式表征的命令具有应用第二不活动时间。 在读取活动期间使用更大的不活动时间比写入活动期间提供更好的性能,同时降低功耗。