公开(公告)号：US10153270B2

公开(公告)日：2018-12-11

申请号：US14599593

申请日：2015-01-19

申请人： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

发明人： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC分类号： H01L27/02 ,  H01L27/088 ,  H01L29/16 ,  H01L29/08

摘要： An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US10134985B2

公开(公告)日：2018-11-20

申请号：US11875541

申请日：2007-10-19

申请人： Wei Lu ,  Sung Hyun Jo

发明人： Wei Lu ,  Sung Hyun Jo

IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

摘要： Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer.

公开(公告)号：US20180154827A1

公开(公告)日：2018-06-07

申请号：US15594069

申请日：2017-05-12

申请人： KWANG HYUN JO

发明人： KWANG HYUN JO

IPC分类号： B60Q1/52

CPC分类号： B60Q1/52 ,  B60Q1/503 ,  B60Q9/00 ,  B60Y2302/03 ,  G08B5/36 ,  G08B25/10 ,  G08B27/008

摘要： Disclosed herein is an information notification device for a vehicle. The information notification device for a vehicle is a vehicle-mounted safety product, and enables shapes and characters or the like, adapted to indicate a direction, to be displayed in various manners by opening the trunk of a vehicle when a breakdown or accident of the vehicle has occurred, and thus the driver of the following vehicle can be rapidly and accurately notified of the emergency situation and a traffic lane to and along which the following vehicle needs to switch its lane and to travel can be indicated by a directional sign, thereby enabling the driver of the following vehicle to more safely and rapidly deal with the emergency situation.

公开(公告)号：US20160247876A1

公开(公告)日：2016-08-25

申请号：US14965982

申请日：2015-12-11

申请人： Jae-yup Chung ,  Yoon-seok LEE ,  Hyun-jo KIM ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Se-wan PARK ,  Bo-cheol JEONG

发明人： Jae-yup Chung ,  Yoon-seok LEE ,  Hyun-jo KIM ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Se-wan PARK ,  Bo-cheol JEONG

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823481 ,  H01L21/8232 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0843 ,  H01L29/1033 ,  H01L29/41791 ,  H01L29/785

摘要： An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

摘要翻译： 集成电路器件包括具有不同导电类型沟道区的第一和第二鳍式有源区，覆盖第一鳍式有源区的人行道的第一器件隔离层和覆盖第二鳍的两侧壁的第二器件隔离层 型活性区。 第一器件隔离层和第二器件隔离层具有不同的堆叠结构。 为了制造集成电路器件，覆盖第一鳍式有源区的两个侧壁的第一器件隔离层和覆盖第二鳍式有源区的人行道的第二器件隔离层在第​​一鳍式有源区 并形成第二鳍型有源区。 第一器件隔离层和第二器件隔离层形成为具有不同的堆叠结构。

公开(公告)号：US08796658B1

公开(公告)日：2014-08-05

申请号：US13466008

申请日：2012-05-07

申请人： Hagop Nazarian ,  Sung Hyun Jo

发明人： Hagop Nazarian ,  Sung Hyun Jo

IPC分类号： H01L47/00 ,  H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1641 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/165 ,  H01L45/1675

摘要： A resistive memory device includes a first metallic layer comprising a source of positive metallic ions, a switching media having an upper surface and a lower surface, wherein the upper surface is adjacent to the first metallic layer, wherein the switching media comprises conductive filaments comprising positive metallic ions from the source of positive metallic ions formed from the upper surface towards the lower surface, a semiconductor substrate, a second metallic layer disposed above the semiconductor substrate, a non-metallic conductive layer disposed above the second metallic layer, and an interface region between the non-metallic conductive layer and the switching media having a negative ionic charge.

摘要翻译： 电阻式存储器件包括包含正金属离子源的第一金属层，具有上表面和下表面的开关介质，其中上表面与第一金属层相邻，其中开关介质包括包含正极的导电细丝 从上表面朝向下表面形成的正金属离子源的金属离子，半导体衬底，设置在半导体衬底上方的第二金属层，设置在第二金属层上方的非金属导电层，以及界面区域 在非金属导电层和具有负离子电荷的开关介质之间。

公开(公告)号：US08723154B2

公开(公告)日：2014-05-13

申请号：US12894057

申请日：2010-09-29

申请人： Sung Hyun Jo ,  Hagop Nazarian

发明人： Sung Hyun Jo ,  Hagop Nazarian

IPC分类号： H01L29/12 ,  H01L29/8605 ,  H01L27/105 ,  H01L21/8239

CPC分类号： H01L45/1233 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

摘要： An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device.

摘要翻译： 集成电路器件。 集成电路器件包括具有表面区域的半导体衬底。 栅极电介质层覆盖在衬底的表面区域上。 该器件包括具有p +有源区的MOS器件。 p +有源区形成用于电阻式开关器件的第一电极。 电阻开关器件包括覆盖p +有源区的非晶硅开关材料和覆盖在第一金属导体结构上的金属电极。 金属电极包括金属材料，当对金属电极施加正偏压时，在非晶硅开关材料中形成金属区域。 MOS器件为集成电路器件提供选择晶体管。

公开(公告)号：US08504050B2

公开(公告)日：2013-08-06

申请号：US12850682

申请日：2010-08-05

申请人： Tae Soo Kwon ,  Jung Min Moon ,  Dong Ho Cho ,  O Hyun Jo

发明人： Tae Soo Kwon ,  Jung Min Moon ,  Dong Ho Cho ,  O Hyun Jo

IPC分类号： H04W72/00

CPC分类号： H04W72/048 ,  H04W36/0083

摘要： A common operating set including a plurality of cells may be set, and common radio resources may be allocated to enable the plurality of cells to perform a multi-cell common operation. Unique uplink radio resources may be allocated to each of terminals in the common operating set within the common radio resources, and each of the terminals may transmit corresponding uplink feedback information to a plurality of base stations based on corresponding unique uplink radio resources. Accordingly, each of the base stations may recognize information associated with a wireless environment between each of terminals and a corresponding base station.

摘要翻译： 可以设置包括多个小区的公共操作集合，并且可以分配公共无线电资源以使多个小区能够执行多小区公共操作。 唯一的上行链路无线电资源可以被分配给公共无线电资源中的公共操作集合中的每个终端，并且每个终端可以基于相应的唯一上行链路无线电资源向多个基站发送相应的上行链路反馈信息。 因此，每个基站可以识别与每个终端和对应的基站之间的无线环境相关联的信息。

公开(公告)号：US08502185B2

公开(公告)日：2013-08-06

申请号：US13149757

申请日：2011-05-31

申请人： Wei Lu ,  Sung Hyun Jo

发明人： Wei Lu ,  Sung Hyun Jo

IPC分类号： H01L47/00 ,  H01L27/10 ,  H01L45/00

CPC分类号： H01L27/2409 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/148

摘要： A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.

公开(公告)号：US08467227B1

公开(公告)日：2013-06-18

申请号：US13290024

申请日：2011-11-04

申请人： Sung Hyun Jo

发明人： Sung Hyun Jo

IPC分类号： G11C11/00

CPC分类号： G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/33 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1266 ,  H01L45/14

摘要： A non-volatile memory device includes a first electrode, a resistive switching material stack overlying the first electrode. The resistive switching material stack comprising a first resistive switching material and a second resistive switching material. The second resistive switching material overlies the first electrode and the first resistive switching material overlying the second resistive switching material. The first resistive switching material is characterized by a first switching voltage having a first amplitude. The second resistive switching material is characterized by a second switching voltage having a second amplitude no greater than the first switching voltage. A second electrode comprising at least a metal material physically and electrically in contact with the first resistive switching material overlies the first resistive switching material.

摘要翻译： 非易失性存储器件包括第一电极，覆盖第一电极的电阻开关材料堆叠。 电阻开关材料堆叠包括第一电阻开关材料和第二电阻开关材料。 第二电阻开关材料覆盖在第二电阻开关材料上的第一电极和第一电阻开关材料。 第一电阻开关材料的特征在于具有第一幅度的第一开关电压。 第二电阻开关材料的特征在于具有不大于第一开关电压的第二幅度的第二开关电压。 至少包括与第一电阻式开关材料物理和电接触的金属材料的第二电极覆盖在第一电阻开关材料上。

公开(公告)号：US20130078658A1

公开(公告)日：2013-03-28

申请号：US13491258

申请日：2012-06-07

申请人： Dong-hyun PARK ,  Hyun-jo KANG ,  Ko-bong CHOI ,  Myo-yong LEE

发明人： Dong-hyun PARK ,  Hyun-jo KANG ,  Ko-bong CHOI ,  Myo-yong LEE

IPC分类号： G01N21/76 ,  G01N21/64 ,  C12N9/96 ,  C12P21/00

CPC分类号： C07K14/705 ,  C07K14/70596 ,  C07K2319/60

摘要： A recombinant exosome comprising a fusion protein of a membrane protein and light-emitting protein, and a method of determining an exosome recovery rate by using the recombinant exosome are provided. Use of the method ensures accurate quantification of exosomes in a sample, and thus, improves the efficiency of an exosome-based diagnosis.

摘要翻译： 提供了包含膜蛋白和发光蛋白的融合蛋白的重组外来体，以及通过使用重组外来体确定外来体回收率的方法。 使用该方法确保样品中外来体的准确定量，从而提高基于外来体的诊断的效率。