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公开(公告)号：US20150321901A1
公开(公告)日：2015-11-12
申请号：US14798112
申请日：2015-07-13
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
IPC: B81B3/00
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：US20150289046A1
公开(公告)日：2015-10-08
申请号：US14275337
申请日：2014-05-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
IPC: H04R1/08
CPC classification number: H04R31/003 , B81B3/0021 , B81B3/0086 , B81B2201/0221 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C1/00158 , B81C2201/013 , H04R1/08 , H04R19/005 , H04R31/006 , H04R2201/003
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
Abstract translation: MEMS器件包括背板电极和与背板电极间隔开设置的膜。 膜包括可移位部分和固定部分。 背板电极和膜被布置成使得膜的固定部分与背板电极的重叠区域小于最大重叠。
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公开(公告)号：US20150255407A1
公开(公告)日：2015-09-10
申请号：US14201260
申请日：2014-03-07
Applicant: Infineon Technologies AG
Inventor： Christoph Glacer , Alfons Dehe , John Brueckner
CPC classification number: H01L22/12 , B81C99/004 , G01N3/02 , G01N3/08 , G01N2203/0017 , G01N2203/0286 , G01N2203/0298 , H01L21/0217 , H01L21/32055 , H01L22/32 , H01L23/564 , H01L2924/0002 , H01L2924/00
Abstract: According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a substrate. The structure is released from the substrate and includes a test layer mechanically coupled between the two rigid anchors. The test layer includes a first region having a first cross-sectional area and a constricted region having a second cross-sectional area smaller than the first cross-sectional area. The structure also includes a first tensile stressed layer disposed on a surface of the test layer adjacent the first region.
Abstract translation: 根据一个实施例，微型制造的测试结构包括机械耦合在两个刚性锚固件之间并且设置在基板上方的结构。 该结构从衬底上释放并且包括机械耦合在两个刚性锚固件之间的测试层。 测试层包括具有第一横截面积的第一区域和具有小于第一横截面积的第二横截面积的收缩区域。 该结构还包括设置在与第一区域相邻的测试层的表面上的第一拉伸应力层。
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公开(公告)号：US20150145079A1
公开(公告)日：2015-05-28
申请号：US14611953
申请日：2015-02-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
CPC classification number: H04R31/003 , B81B3/001 , B81B3/0072 , B81B2201/0257 , H04R7/14 , H04R19/005 , H04R19/04
Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
Abstract translation: 在一个实施例中，制造半导体器件的方法包括氧化衬底以形成在衬底的顶表面上方延伸的局部氧化物区域。 在局部氧化物区域和衬底的顶表面上形成膜层。 去除膜层下面的一部分基底。 去除膜层下面的局部氧化物区域。
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公开(公告)号：US20150101395A1
公开(公告)日：2015-04-16
申请号：US14052959
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
IPC: G01N29/24
CPC classification number: G01N29/2425 , G01N21/1702 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/021
Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
Abstract translation: 用于分析气体的光声气体传感器装置包括发射器模块和压敏模块。 发射器模块布置在载体衬底上并发射光脉冲。 压敏模块布置在载体基板上的参考气体体积内。 将参考气体体积与要被分析的气体填充的体积分离。 此外，压敏模块产生传感器信号，该传感器信号指示由与参考气体体积内的参考气体相互作用的发射器模块发射的光脉冲引起的声波信息。 此外，发射器模块被布置成使得发射器模块发射的光脉冲在穿过要被分析的气体填充的体积之后达到参考气体体积。
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Patent Agency Ranking
公开(公告)号：US20150061048A1
公开(公告)日：2015-03-05
申请号：US14011566
申请日：2013-08-27
Applicant: Infineon Technologies AG
Inventor： Irmgard Escher-Poeppel , Edward Fuergut , Alfons Dehe
CPC classification number: H04R1/021 , H04R1/086 , H04R19/005 , H04R31/006 , H04R2201/003 , H04R2201/02 , H04R2231/003
Abstract: A packaged MEMS device may include an embedding arrangement, a MEMS device disposed in the embedding arrangement, a sound port disposed in the embedding arrangement and acoustically coupled to the MEMS device, and a grille within the sound port. Some embodiments relate to a sound transducer component including an embedding material and a substrate-stripped MEMS die embedded into the embedding material. The MEMS die may comprise a diaphragm for sound transduction. The sound transducer component may further comprise a sound port within the embedding material in fluidic or acoustic contact with the diaphragm. Further embodiments relate to a method for packaging a MEMS device or to a method for manufacturing a sound transducer component.
Abstract translation: 封装的MEMS器件可以包括嵌入布置，布置在嵌入布置中的MEMS器件，布置在嵌入布置中并声耦合到MEMS器件的声音端口和声音端口内的格栅。 一些实施例涉及包括嵌入材料和嵌入到嵌入材料中的剥离衬底的MEMS芯片的声音传感器部件。 MEMS管芯可以包括用于声音传递的隔膜。 声音传感器部件还可以包括与隔膜流体或声学接触的嵌入材料内的声音端口。 另外的实施例涉及用于封装MEMS装置的方法或用于制造声换能器部件的方法。
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公开(公告)号：US08921956B2
公开(公告)日：2014-12-30
申请号：US13750941
申请日：2013-01-25
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe
IPC: H01L29/82
CPC classification number: B81C1/00269 , B81B3/001 , B81B3/007 , B81B2201/0257 , B81B2201/0264 , B81C1/00166 , B81C1/00658 , H04R19/005
Abstract: MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions.
Abstract translation: 公开了具有刚性背板的MEMS装置和制造具有刚性背板的MEMS装置的方法。 在一个实施例中，装置包括基板和由基板支撑的背板。 背板包括细长突起。
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138.发明申请MEMS Acoustic Transducer, MEMS Microphone, MEMS Microspeaker, Array of Speakers and Method for Manufacturing an Acoustic Transducer 有权MEMS声学传感器，MEMS麦克风，MEMS微型扬声器，扬声器阵列和制造声学传感器的方法公开(公告)号：US20140270271A1
公开(公告)日：2014-09-18
申请号：US13830111
申请日：2013-03-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Guenther Ruhl
CPC classification number: H04R23/00 , B81B3/0018 , B81C1/00158 , H04R7/04 , H04R19/005 , H04R31/00 , H04R31/006 , H04R2307/023
Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.
Abstract translation: MEMS声换能器包括具有穿过其中的腔的衬底，以及导电背板单元，其包括在衬底空腔上延伸的多个导电多孔背板部分。 布置在相邻的导电多孔背板部分之间的背板单元上的电介质隔离物和一个或多个石墨烯膜由介电间隔物支撑并在导电多孔背板部分上延伸。
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公开(公告)号：US20140264651A1
公开(公告)日：2014-09-18
申请号：US13804934
申请日：2013-03-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：US11630087B2
公开(公告)日：2023-04-18
申请号：US17591714
申请日：2022-02-03
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Juergen Woellenstein
Abstract: An apparatus for in-situ calibration of a photoacoustic sensor includes a measurement device configured to measure an electric signal at an IR emitter of the photoacoustic sensor, wherein the IR emitter generates an electromagnetic spectrum based on the electric signal; and a calibration unit including processing circuitry, configured to compare the electric signal with a comparison value to generate a comparison result used as calibration information. When performing the in-situ calibration, the calibration unit is configured to adjust the electric signal based on the calibration information, or the calibration unit is configured to process an output signal of the photoacoustic sensor based on the calibration information to obtain an adjusted output signal of the photoacoustic sensor.
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