公开(公告)号：US08962077B2

公开(公告)日：2015-02-24

申请号：US14004894

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC: C23C16/448 ,  C23C14/04 ,  C23C14/24 ,  H01L51/00 ,  H01L51/56

CPC classification number: C23C16/448 ,  C23C14/042 ,  C23C14/243 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle emitting device (30) includes a hollow rotor (40) provided with a first and a second nozzle sections (50 and 60), a rolling mechanism, and heat exchangers (52 and 62), and when the rolling mechanism causes the rotor (40) to rotate, the heat exchangers (52 and 62) switch between cooling and heating in accordance with placement of the nozzle section so that that one of the nozzle sections which faces outward has a temperature lower than a temperature at which vapor deposition material turns into gas and the other nozzle section has a temperature equal to or higher than the temperature at which the vapor deposition material turns into the gas.

Abstract translation: 气相沉积粒子发射装置（30）包括设置有第一和第二喷嘴部分（50和60），滚动机构和热交换器（52和62）的中空转子（40），并且当滚动机构引起 转子（40）旋转，热交换器（52和62）根据喷嘴部分的放置而在冷却和加热之间切换，使得面向外的喷嘴部分之一的温度低于蒸气 沉积材料变成气体，另一个喷嘴部分的温度等于或高于气相沉积材料变成气体的温度。

公开(公告)号：US08907445B2

公开(公告)日：2014-12-09

申请号：US13980563

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L27/32 ,  C23C14/12 ,  H05B33/10 ,  H01L51/00 ,  C23C14/04 ,  H01L51/56

CPC classification number: H01L27/3262 ,  C23C14/044 ,  C23C14/12 ,  H01L27/3211 ,  H01L51/0011 ,  H01L51/56 ,  H05B33/10

Abstract: A film formation substrate (200) is a film formation substrate having a plurality of vapor deposition regions (24R and 24G) (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films (23R and 23G) are provided. The vapor-deposited film (24R) has inclined side surfaces 23s which are inclined with respect to a direction normal to the film formation substrate (200). A width, in the predetermined direction, of the vapor-deposited film (23R) is larger than the sum of (i) a width, in the predetermined direction, of the vapor deposition region (24R) and (ii) a width, in the predetermined direction, of a region (29) between the vapor deposition region (24R) and the vapor deposition region (24G).

Abstract translation: 成膜基板（200）是具有沿着规定方向配置的多个蒸镀区域（24R，24G）（i）的成膜基板，（ii）各自的蒸镀膜（23R，23G） 被提供。 蒸镀膜（24R）具有相对于成膜基板（200）的垂直方向倾斜的倾斜侧面23s。 气相沉积膜（23R）的预定方向上的宽度大于（i）蒸镀区域（24R）的预定方向的宽度和（ii）宽度的总和， 在蒸镀区域（24R）和气相沉积区域（24G）之间的区域（29）的预定方向。

公开(公告)号：US08877419B2

公开(公告)日：2014-11-04

申请号：US11504685

申请日：2006-08-16

Applicant: Satoshi Inoue ,  Koutarou Yoshihara ,  Yosuke Tsurumi ,  Moegi Iguchi ,  Masahiro Takagi

Inventor： Satoshi Inoue ,  Koutarou Yoshihara ,  Yosuke Tsurumi ,  Moegi Iguchi ,  Masahiro Takagi

IPC: G03G13/14 ,  G03G9/113 ,  G03G15/01

CPC classification number: G03G15/0126 ,  G03G2215/0119 ,  G03G2215/0158

Abstract: The present invention provides a composite color image forming method. The method includes electrically charging a latent image-holding member; exposing the charged latent image-holding member to light to form an electrostatic latent image; developing the electrostatic latent image with a two-component developer containing toner particles of one color and a carrier to form a toner image on the latent image-holding member; primarily transferring the toner image from the latent image-holding member to an intermediate transfer member; repeating the electrically charging, the exposing, the developing, and the primarily transferring, while the toner particles are replaced with toner particles of different color, to form a composite color image on the intermediate transfer member; and secondarily transferring the composite color image from the intermediate transfer member to a recording medium. The carrier contains magnetic substance-dispersed core particles in which a magnetic substance is dispersed in a resin, and a coating layer that coats the surface of each of the magnetic substance-dispersed core particles at a covering rate of 95% or more. In addition, the carrier has a degree of circularity of 0.970 or more. The intermediate transfer member is a belt that has a substrate whose Young's modulus is in the range of 3,000 to 6,500 MPa. During the primary transferring, primary transfer nip pressure is in the range of 8 to 20 gf/cm, and a value (T/P) obtained by dividing a primary transfer current value T (μA) by a processing speed P (mm/sec) is from 0.08 to 0.18.

Abstract translation: 本发明提供一种复合彩色图像形成方法。 该方法包括对潜像保持部件进行充电; 将带电潜象保持部件曝光，形成静电潜像; 用含有一种颜色的调色剂颗粒和载体的双组分显影剂显影静电潜像，以在潜像保持构件上形成调色剂图像; 主要将调色剂图像从潜像保持部件转印到中间转印部件; 在调色剂颗粒被不同颜色的调色剂颗粒代替时，重复进行充电，曝光，显影和主要转印，以在中间转印部件上形成复合彩色图像; 然后将复合彩色图像从中间转印部件转印到记录介质上。 载体包含磁性物质分散的核心颗粒，其中磁性物质分散在树脂中，以及涂覆层以覆盖率95％或更高覆盖每个磁性物质分散的核心颗粒的表面。 此外，载体的圆形度为0.970以上。 中间转印部件是具有杨氏模量在3,000〜6,500MPa范围内的基板的带。 在一次转印期间，一次转印辊隙压力在8至20gf / cm的范围内，并且通过将一次转印电流值T（μA）除以处理速度P（mm / sec）而获得的值（T / P） ）为0.08〜0.18。

公开(公告)号：US08835189B2

公开(公告)日：2014-09-16

申请号：US13319072

申请日：2010-03-24

Applicant: Satoshi Inoue

Inventor： Satoshi Inoue

IPC: H01L21/00 ,  B41M5/382 ,  H01L51/56 ,  B41M5/26 ,  H01L27/32 ,  H05B33/10 ,  H01L51/00

CPC classification number: H01L51/56 ,  B41M5/265 ,  B41M5/38221 ,  H01L27/3211 ,  H01L27/3281 ,  H01L51/001 ,  H01L51/0013 ,  H05B33/10

Abstract: A donor film 40 including an organic donor layer 42 and a transfer target substrate 12 including a lower electrode 7 are prepared. The organic donor layer 42 is thermally transferred to the top of the lower electrode 7 of the transfer target substrate 12 to form an organic layer 17 by placing the donor film 40 between the transfer target substrate 12 and a thermal head 38 and bringing the transfer target substrate 12 and the thermal head 38 into close contact with each other by magnetic attraction of a magnetic body 4, and then an upper electrode is formed on the organic layer 17, to obtain an organic EL element. This provides an organic EL element with excellent quality free from unevenness in the transfer of the organic donor layer from the donor film even when the transfer target substrate is large in size.

Abstract translation: 制备包括有机施主层42的供体膜40和包括下电极7的转印靶基板12。 有机供体层42通过将施主膜40放置在转印靶基板12和热敏头38之间而将转印目标基板12的下部电极7的顶部热传递到有机层17，并将转印目标 基板12和热敏头38通过磁性体4的磁吸引而彼此紧密接触，然后在有机层17上形成上部电极，以获得有机EL元件。 这提供了有机EL元件，即使当转印目标基板尺寸较大时，也能够有效地提供有机供体层从施主膜的转印不均匀的质量。

公开(公告)号：US08796240B2

公开(公告)日：2014-08-05

申请号：US13636910

申请日：2011-03-25

Applicant: Satoshi Inoue ,  Kenichi Takayama

Inventor： Satoshi Inoue ,  Kenichi Takayama

IPC: A61K48/00 ,  A61K49/00 ,  C12N15/11

CPC classification number: C12N15/113 ,  A61K31/7088 ,  A61K31/713 ,  C12N15/1137 ,  C12N2310/11 ,  C12N2310/113 ,  C12N2310/351 ,  C12N2320/30 ,  C12Y101/01158 ,  G01N33/5041 ,  G01N33/57434

Abstract: An object is to provide a cell growth inhibitor also effective for androgen-independent prostate cancer. The present invention provides a cell growth inhibitor having, as an active ingredient, an expression inhibitor or function inhibitor of an antisense RNA (CTBP1-AS) expressed in the vicinity of an androgen receptor (AR) binding site of a C-terminal binding protein (CTBP1) gene.

Abstract translation: 目的是提供一种对雄激素依赖性前列腺癌有效的细胞生长抑制剂。 本发明提供一种细胞生长抑制剂，其具有作为活性成分的在C-末端结合蛋白的雄激素受体（AR）结合位点附近表达的反义RNA（CTBP1-AS）的表达抑制剂或功能抑制剂 （CTBP1）基因。

公开(公告)号：US08668956B2

公开(公告)日：2014-03-11

申请号：US13985281

申请日：2012-03-07

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda ,  Satoshi Hashimoto

IPC: C23C16/448 ,  C23C14/26

CPC classification number: H01L51/5012 ,  B05D1/60 ,  C23C14/042 ,  C23C14/243 ,  C23C14/542 ,  C23C14/564 ,  H01L51/0003 ,  H01L51/56

Abstract: A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).

Abstract translation: 气相沉积粒子注入装置（30）包括气相沉积粒子产生部分（41），由中间喷嘴部分（51），气相沉积粒子发射喷嘴部分（61）和热交换器 43，63，53）。 气相沉积粒子发射喷嘴部分（61）被控制在低于气相沉积材料变成气体的温度的温度。 同时，中间喷嘴部（51）由热交换器（53）控制，处于蒸镀微粒生成部（41）的温度与蒸镀微粒发射喷嘴部的温度 61）。

公开(公告)号：US08668157B2

公开(公告)日：2014-03-11

申请号：US13996515

申请日：2011-12-16

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: B02C19/00 ,  B24B1/00

CPC classification number: B03C1/005 ,  B03C1/30 ,  B03C2201/20 ,  C23C14/12 ,  C23C14/564 ,  H01L51/0016

Abstract: A layer (71), made from a material that is attracted by a magnet, is formed in at least part of a chamber component (70), which at least part makes in contact with a film forming material. A method for collecting a film forming material includes the steps of: (a) exfoliating an attachment (22) which has attached to a surface of the chamber component (70); and (b) collecting the attachment (22) by separating a fragment of the layer (71), which fragment has been exfoliated in the step (a), while causing the fragment to be attracted by a magnet (202a).

Abstract translation: 在由至少部分与成膜材料接触的室部件（70）的至少一部分中形成由被磁体吸引的材料制成的层（71）。 收集成膜材料的方法包括以下步骤：（a）剥离附着在室部件（70）的表面上的附件（22）; 和（b）通过在片段被磁体（202a）吸引的同时分离在步骤（a）中剥离的片段的片段（71）来收集附件（22）。

公开(公告)号：US08658545B2

公开(公告)日：2014-02-25

申请号：US13989704

申请日：2011-12-15

Applicant: Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

Inventor： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC: H01L21/31 ,  H01L21/469 ,  C23C16/00

CPC classification number: H01L51/56 ,  C23C14/044 ,  C23C14/12 ,  C23C14/562 ,  C23C16/45578 ,  H01L27/3244 ,  H01L51/0011

Abstract: A vapor deposition source (60), a limiting plate unit (80), and a vapor deposition mask (70) are disposed in this order. The limiting plate unit includes a plurality of limiting plates (81) disposed along a first direction. At least a portion of surfaces (83) defining a limiting space (82) of the limiting plate unit and surfaces (84) of the limiting plate unit opposing the vapor deposition source is constituted by at least one outer surface member (110, 120) capable of attaching to and detaching from a base portion (85). Accordingly, a vapor deposition device that is capable of forming a coating film in which edge blur is suppressed on a large-sized substrate and that has excellent maintenance performance can be obtained.

Abstract translation: 依次设置气相沉积源（60），限制板单元（80）和气相沉积掩模（70）。 限位板单元包括沿着第一方向设置的多个限位板（81）。 限定板单元的限制空间（82）的表面的至少一部分和与气相沉积源相对的限制板单元的表面（84）由至少一个外表面构件（110,120）构成， 能够附接到基部（85）并从基部（85）脱离。 因此，可以获得能够形成在大尺寸基板上抑制边缘模糊并且具有优异的维护性能的涂膜的蒸镀装置。

公开(公告)号：US08609442B2

公开(公告)日：2013-12-17

申请号：US13824859

申请日：2011-10-11

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC: H01L21/00 ,  G01R31/26 ,  H01L29/08 ,  H01L23/58 ,  C23C16/00 ,  B05C11/00

CPC classification number: H01L22/20 ,  C23C14/042 ,  C23C14/24 ,  C23C14/54 ,  H01L27/3211 ,  H01L51/001 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space between a plurality of control plates (81) of a control plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate, while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. A difference in the amount of thermal expansion between the vapor deposition source and the control plate unit is detected and corrected. It is thereby possible to form, at a desired position on a large-sized substrate, the coating film in which edge blur and variations in the edge blur are suppressed.

Abstract translation: 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个控制板（81）之间的空间，形成涂膜（90） 控制板单元（80）和气相沉积掩模的掩模开口（71），并且在基板（10）相对于蒸镀掩模（70）移动的同时粘附到基板上， 衬底（10）和气相沉积掩模（70）以固定的间隔隔开。 检测并校正蒸镀源与控制板单元之间的热膨胀量的差异。 因此，可以在大尺寸基板的期望位置形成抑制边缘模糊和边缘模糊变化的涂膜。

公开(公告)号：US20130292666A1

公开(公告)日：2013-11-07

申请号：US13980873

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L27/32

CPC classification number: H01L27/3295 ,  C23C14/042 ,  C23C14/56 ,  H01L27/3211 ,  H01L27/3276 ,  H01L27/3283 ,  H01L51/56 ,  H01L2227/323

Abstract: Provided is a TFT substrate (10) on which vapor-deposited sections are to be formed by use of a vapor deposition device (50) which includes a vapor deposition source (85) having injection holes (86); and a vapor deposition mask (81) having opening (82) through which vapor deposition particles are deposited to form the vapor-deposited sections. The TFT substrate (10) includes pixels two-dimensionally arranged in a pixel region (AG); and wires (14) electrically connected to the respective pixels. The vapor-deposited sections (Q) are formed with gaps (X) therebetween, and the wires (14) having respective terminals that are disposed in the gaps (X).

Abstract translation: 提供了通过使用包括具有喷射孔（86）的气相沉积源（85）的蒸镀装置（50）形成蒸镀部的TFT基板（10）。 和具有开口（82）的气相沉积掩模（81），通过蒸镀掩模沉积气相沉积颗粒以形成气相沉积部分。 TFT基板（10）包括像素区域（AG）二维排列的像素。 以及电连接到各个像素的导线（14）。 气相沉积部分（Q）在它们之间形成有间隙（X），并且具有设置在间隙（X）中的各个端子的导线（14）。