公开(公告)号：US20060260660A1

公开(公告)日：2006-11-23

申请号：US11496937

申请日：2006-07-31

Applicant: Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

Inventor： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC: B08B3/12 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060042651A1

公开(公告)日：2006-03-02

申请号：US10931093

申请日：2004-08-30

Applicant: Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James Papanu ,  Dennis Yost

Inventor： Steven Verhaverbeke ,  Jianshe Tang ,  Roman Gouk ,  Brian Brown ,  Han-Wen Chen ,  Ching-Hwa Weng ,  James Papanu ,  Dennis Yost

IPC: B08B3/12

CPC classification number: H01L21/02074 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/67051 ,  H01L21/76808 ,  H01L21/76814

Abstract: Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

Abstract translation: 描述了针对半导体制造中的特定衬底和结构的清洁溶液和清洁方法。 描述了一种使用表面张力小于水的溶剂形成的清洁溶液清洁尺寸小于0.15μm的脆弱结构的方法，同时向其上形成结构的基底施加声能。 此外，还描述了用几种不同的清洁溶液，特别是硫酸水溶液和HF清洗溶液清洗铜的方法。 此外，还描述了使用不同的清洁溶液同时清洁基板的两侧的方法，所述清洗溶液应用于顶部和底部。

公开(公告)号：US07000621B1

公开(公告)日：2006-02-21

申请号：US11009267

申请日：2004-12-10

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B3/00

CPC classification number: H01L21/67167 ,  B08B3/12 ,  H01L21/67034 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67207 ,  Y10S134/902

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

公开(公告)号：US20050227888A1

公开(公告)日：2005-10-13

申请号：US11145304

申请日：2005-06-03

Applicant: Steven Verhaverbeke ,  J. Truman

Inventor： Steven Verhaverbeke ,  J. Truman

IPC: C11D1/29 ,  C11D1/72 ,  C11D3/02 ,  C11D3/04 ,  C11D3/30 ,  C11D3/32 ,  C11D3/33 ,  C11D3/39 ,  C11D7/06 ,  C11D7/18 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  B08B3/12 ,  C11D1/00

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

Abstract: The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

公开(公告)号：US20050191861A1

公开(公告)日：2005-09-01

申请号：US11038456

申请日：2005-01-18

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  C23F1/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/02093 ,  B08B3/12 ,  B08B7/0021 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

Abstract: Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids in semiconductor applications. In one embodiment, a substrate structure is dried by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a substrate structure is cleaned by applying a supercritical fluid, a dense fluid, or combinations thereof. In still another embodiment, a low-k material layer is repaired by applying a supercritical fluid, a dense fluid, or combinations thereof. In yet another embodiment, a photoresist layer is stripped by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a porous low-k material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof.

Abstract translation: 本发明的实施例一般涉及在半导体应用中使用超临界流体和/或致密流体的方法和装置。 在一个实施方案中，通过施加超临界流体，致密流体或其组合来干燥基底结构。 在另一个实施方案中，通过施加超临界流体，致密流体或其组合来清洁基底结构。 在又一实施例中，通过施加超临界流体，致密流体或其组合来修复低k材料层。 在另一个实施例中，通过施加超临界流体，致密流体或其组合来剥离光致抗蚀剂层。 在另一个实施方案中，通过施加超临界流体，致密流体或其组合来沉积多孔低k材料层。

公开(公告)号：US06807972B2

公开(公告)日：2004-10-26

申请号：US10113495

申请日：2002-03-29

Applicant: Ho-Man Rodney Chiu ,  Eugene Smargiassi ,  Steven Verhaverbeke ,  Brian H. Burrows

Inventor： Ho-Man Rodney Chiu ,  Eugene Smargiassi ,  Steven Verhaverbeke ,  Brian H. Burrows

IPC: B08B302

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B17/00 ,  Y10S134/902

Abstract: A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper end of the catch cup positioned at a height equal to or higher than the gutter.

Abstract translation: 单晶片清洗室，其包括可旋转支架，其可在晶片清洁过程中将晶片放置在捕捉杯的上端下方，位于晶片转移狭缝上方的沟槽; 捕捉杯可以与沟槽匹配以产生间隙，并且捕捉杯的上端位于等于或高于沟槽的高度。

公开(公告)号：US06261845B1

公开(公告)日：2001-07-17

申请号：US09257488

申请日：1999-02-25

Applicant: Steven Verhaverbeke ,  Gerald N. DiBello ,  Christopher F. McConnell

Inventor： Steven Verhaverbeke ,  Gerald N. DiBello ,  Christopher F. McConnell

IPC: G01N3508

CPC classification number: H01L21/67248 ,  G01N35/08 ,  G01N2033/0095 ,  H01L21/67057 ,  H01L21/67086 ,  Y10T436/12

Abstract: The present invention provides systems and methods of determining the concentration of chemicals in a wet processing stream where the wet processing stream is formed from two or more liquid streams having known chemical concentrations. The concentration of chemicals in the wet processing stream are monitored by measuring the flow rates of the liquid streams during combination to form the wet processing stream, and calculating the concentrations of chemicals in the wet processing stream based on the flow rates and known chemical concentrations of the liquid streams. The present invention also provides systems and methods for controlling the wet processing of semiconductor substrates using the calculated concentrations in the wet processing stream. The methods and systems of the present invention are particularly useful when the semiconductor substrates are contacted with the wet processing stream in a single pass.

Abstract translation: 本发明提供了确定湿处理流中化学品浓度的系统和方法，其中湿处理流由具有已知化学浓度的两个或多个液体流形成。 通过在组合期间测量液体流的流量以形成湿处理流来监测湿处理流中的化学品浓度，并且基于流速和已知化学浓度计算湿处理流中化学品的浓度 液体流。 本发明还提供了使用湿处理流中计算的浓度来控制半导体衬底的湿法处理的系统和方法。 当半导体衬底在一次通过湿式处理流体接触时，本发明的方法和系统特别有用。

公开(公告)号：US6032682A

公开(公告)日：2000-03-07

申请号：US881267

申请日：1997-06-24

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: B08B3/08 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311 ,  B08B6/00 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D11/0047 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133

Abstract: The present invention provides methods for efficiently cleaning semiconductor wafers, and particularly for removing photoresist material from the surfaces of semiconductor wafers, using a mixture of sulfuric acid and hydrogen peroxide. In accordance with the present invention, an initial sulfuric acid-based photoresist stripping bath, either being pure sulfuric acid or a sulfuric acid:hydrogen peroxide mixture with a ratio of at least 15:0.3, based on the anhydrous chemical substances, is prepared for processing an initial batch of wafers. During the processing of the semiconductor wafers, hydrogen peroxide is added to the bath solution at a controlled rate of between about 0.015-1.5 g H.sub.2 O.sub.2 (anhydrous basis)/min./liter of photoresist bath solution. In such a way, the conversion of hydrogen peroxide to Caro's acid is optimized resulting in an extended bath life and conservation of hydrogen peroxide.

Abstract translation: 本发明提供了使用硫酸和过氧化氢的混合物有效地清洁半导体晶片，特别是用于从半导体晶片的表面去除光致抗蚀剂材料的方法。 根据本发明，制备基于无水化学物质的初始硫酸类光致抗蚀剂剥离浴，其为纯硫酸或比例至少为15:0.3的硫酸：过氧化氢混合物，用于 处理初始批次的晶圆。 在半导体晶片的加工期间，过氧化氢以约0.015-1.5g H 2 O 2（无水基）/分/分光刻胶浴溶液的控制速率加入到浴溶液中。 以这种方式，过氧化氢向卡罗酸的转化被优化，导致延长的浴寿命和过氧化氢的保存。