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    Cleaning liquid composition for semiconductor substrate
    3.
    发明申请
    Cleaning liquid composition for semiconductor substrate 失效
    半导体衬底清洗液组合物

    公开(公告)号：US20040204329A1

    公开(公告)日：2004-10-14

    申请号：US10818033

    申请日：2004-04-05

    发明人： Yumiko Abe ,  Norio Ishikawa

    IPC分类号： C11D001/00

    CPC分类号： C11D7/5022 ,  C11D7/263 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02093

    摘要： A cleaning liquid composition used for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees is provided, the cleaning liquid composition including an aliphatic polycarboxylic acid and an organic solvent having a hydroxyl group and/or an ether group, and the cleaning liquid composition having a contact angle of at most 40 degrees when dropped on the semiconductor substrate. Also provided is a method for cleaning a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees by means of the above cleaning liquid composition.

    摘要翻译： 提供了一种用于清洁其表面与其下降到其上的水的接触角的半导体衬底的清洁液体组合物，所述清洗液组合物包含脂族多元羧酸和具有羟基的有机溶剂和/或 醚基，并且当滴在半导体衬底上时具有至多40度的接触角的清洁液组合物。 还提供了一种通过上述清洗液组合物清洗其表面与其下落的水的接触角至少为70度的半导体衬底的方法。

    Liquid Chemical for Forming Water Repellent Protecting Film, and Process for Cleaning Wafers Using the Same
    5.
    发明申请
    Liquid Chemical for Forming Water Repellent Protecting Film, and Process for Cleaning Wafers Using the Same 审中-公开
    用于防水防水膜的液体化学品，以及使用其的清洗晶片的方法

    公开(公告)号：US20160230016A1

    公开(公告)日：2016-08-11

    申请号：US15130250

    申请日：2016-04-15

    申请人： Central Glass Company, Limited

    发明人： Soichi KUMON ,  Takashi SAIO ,  Masanori SAITO ,  Shinobu ARATA

    IPC分类号： C09D5/00 ,  H01L21/02

    CPC分类号： C09D5/00 ,  C11D1/004 ,  C11D1/006 ,  C11D1/04 ,  C11D1/342 ,  C11D1/40 ,  C11D1/58 ,  C11D3/2079 ,  C11D3/28 ,  C11D3/3427 ,  C11D3/361 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/02068 ,  H01L21/02093 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/321

    摘要： A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.

    摘要翻译： 一种用于在晶片上形成防水保护膜的液体化学品，其表面具有不均匀图案，并且含有选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素。 凹凸图案的凹部，防水保护膜至少形成在凹部的表面上。 液体化学品的特征在于包括：防水保护膜形成剂; 和水，其特征在于防水保护膜形成剂为选自下列通式[1]表示的化合物及其盐化合物中的至少一种，并且水相对于所含溶剂总量的浓度 在液体化学品中不低于50质量％。

    Method and composition for restoring dielectric properties of porous dielectric materials
    7.
    发明授权
    Method and composition for restoring dielectric properties of porous dielectric materials 失效
    用于恢复多孔介电材料介电性能的方法和组合物

    公开(公告)号：US07977121B2

    公开(公告)日：2011-07-12

    申请号：US11601486

    申请日：2006-11-17

    申请人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

    发明人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3105 ,  H01L21/0206 ,  H01L21/02093

    摘要： The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.

    摘要翻译： 本发明提供一种恢复多孔介电材料的介电性能的方法。 该方法包括提供包含至少一层多孔电介质材料的基底，该多孔电介质材料包括含有至少一种具有表面张力的截留液体的污染物，其中包含至少一种污染物的多孔电介质材料具有第一介电常数。 衬底与包含水和至少一种表面张力小于多孔介电材料的至少一层中的至少一个截留液体的表面张力的化合物接触。 在干燥时，多孔电介质材料具有低于第一介电常数的第二介电常数，并且在干燥时除去恢复流体的所有组分。

    Method and composition for restoring dielectric properties of porous dielectric materials
    8.
    发明申请
    Method and composition for restoring dielectric properties of porous dielectric materials 失效
    用于恢复多孔介电材料介电性能的方法和组合物

    公开(公告)号：US20080118995A1

    公开(公告)日：2008-05-22

    申请号：US11601486

    申请日：2006-11-17

    申请人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

    发明人： Dnyanesh Chandrakant Tamboli ,  Madhukar Bhaskara Rao ,  Mark Leonard O'Neill

    IPC分类号： H01L21/71

    CPC分类号： H01L21/3105 ,  H01L21/0206 ,  H01L21/02093

    摘要： The present invention provides a method for restoring the dielectric properties of a porous dielectric material. The method comprises providing a substrate comprising at least one layer of a porous dielectric material comprising a contaminant comprising at least one entrapped liquid having a surface tension, wherein the porous dielectric material comprising the at least one contaminant has a first dielectric constant. The substrate is contacted with a restoration fluid comprising water and at least one compound having a surface tension that is less than the surface tension of the at least one entrapped liquid in the at least one layer of a porous dielectric material. Upon drying, the porous dielectric material has a second dielectric constant that is lower than the first dielectric constant and all constituents of the restoration fluid are removed upon drying.

    摘要翻译： 本发明提供一种恢复多孔介电材料的介电性能的方法。 该方法包括提供包含至少一层多孔电介质材料的基底，该多孔电介质材料包括含有至少一种具有表面张力的截留液体的污染物，其中包含至少一种污染物的多孔电介质材料具有第一介电常数。 衬底与包含水和至少一种表面张力小于多孔介电材料的至少一层中的至少一个截留液体的表面张力的化合物接触。 在干燥时，多孔电介质材料具有低于第一介电常数的第二介电常数，并且在干燥时除去恢复流体的所有组分。

    Using supercritical fluids and/or dense fluids in semiconductor applications
    9.
    发明申请
    Using supercritical fluids and/or dense fluids in semiconductor applications 审中-公开
    在半导体应用中使用超临界流体和/或致密流体

    公开(公告)号：US20040198066A1

    公开(公告)日：2004-10-07

    申请号：US10394465

    申请日：2003-03-21

    申请人： Applied Materials, Inc.

    发明人： Steven Verhaverbeke

    IPC分类号： H01L021/302

    CPC分类号： H01L21/02093 ,  B08B3/12 ,  B08B7/0021 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

    摘要： Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids in semiconductor applications. In one embodiment, a substrate structure is dried by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a substrate structure is cleaned by applying a supercritical fluid, a dense fluid, or combinations thereof. In still another embodiment, a low-k material layer is repaired by applying a supercritical fluid, a dense fluid, or combinations thereof. In yet another embodiment, a photoresist layer is stripped by applying a supercritical fluid, a dense fluid, or combinations thereof. In another embodiment, a porous low-k material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof.

    摘要翻译： 本发明的实施例一般涉及在半导体应用中使用超临界流体和/或致密流体的方法和装置。 在一个实施方案中，通过施加超临界流体，致密流体或其组合来干燥基底结构。 在另一个实施方案中，通过施加超临界流体，致密流体或其组合来清洁基底结构。 在又一实施例中，通过施加超临界流体，致密流体或其组合来修复低k材料层。 在另一个实施例中，通过施加超临界流体，致密流体或其组合来剥离光致抗蚀剂层。 在另一个实施方案中，通过施加超临界流体，致密流体或其组合来沉积多孔低k材料层。