公开(公告)号：US07781564B2

公开(公告)日：2010-08-24

申请号：US11565751

申请日：2006-12-01

Applicant: Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

Inventor： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

IPC: C08G75/06 ,  H01L35/24 ,  H01L51/40

CPC classification number: H01B1/127 ,  C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.

Abstract translation: 聚噻吩，其中单体链段含有其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5， 并且二价键D的数目为0或1。

公开(公告)号：US20100184595A1

公开(公告)日：2010-07-22

申请号：US12690326

申请日：2010-01-20

Applicant: John J. Vajo ,  Wen Li ,  Ping Liu ,  Tina T. Salguero

Inventor： John J. Vajo ,  Wen Li ,  Ping Liu ,  Tina T. Salguero

IPC: B01J20/04

CPC classification number: C01B3/0078 ,  C01B3/0042 ,  C01B6/15 ,  Y02E60/327

Abstract: An exemplary embodiment and associated method of use discloses a hydrogen storage system that liberates hydrogen and includes a combination of at least one complex hydride containing a cation and a complex hydride anion based on boron, aluminum or nitrogen, together with an approximately stoichiometric or chemically equivalent amount of at least one other complex hydride containing a cation and a complex hydride anion based on a transition metal.

Abstract translation: 示例性实施方案和相关使用方法公开了一种氢存储系统，其释放氢并且包括至少一种含有阳离子和基于硼，铝或氮的复合氢化物阴离子的复合氢化物与大约化学计量或化学当量的组合 至少一种含有阳离子和基于过渡金属的复合氢化物阴离子的其它复合氢化物的量。

公开(公告)号：US20100121004A1

公开(公告)日：2010-05-13

申请号：US12270088

申请日：2008-11-13

Applicant: Yuning Li ,  Ping Liu ,  Yiliang Wu

Inventor： Yuning Li ,  Ping Liu ,  Yiliang Wu

IPC: C08F4/26 ,  C07D333/50 ,  C08F28/06

CPC classification number: C07D333/50 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1424 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/43 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0025

Abstract: Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R′ is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.

Abstract translation: 公开了一种纯化式（II）单体的方法：其中R 1和R 2独立地选自烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素; 并且R'选自氢，烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素。 合成单体后，通过柱色谱纯化，使用中性氧化铝和己烷作为洗脱剂。 所得产物还可以使用异丙醇，己烷，庚烷或甲苯进一步重结晶。 由纯化单体形成的聚合物表现出更高的迁移率和增加迁移率的再现性。

公开(公告)号：US20100090200A1

公开(公告)日：2010-04-15

申请号：US12250691

申请日：2008-10-14

Applicant: Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

Inventor： Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

IPC: H01L51/05

CPC classification number: H01L51/0529 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (1): where R′ is alkyl having from about 1 to about 24 carbon atoms; R″ is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

Abstract translation: 公开了具有改进的移动性的有机薄膜晶体管。 晶体管在介电层和半导体层之间包含两个界面层。 一个界面层由硅氧烷聚合物或倍半硅氧烷聚合物形成。 另一界面层由式（1）的含烷基的硅烷形成：其中R'为具有约1至约24个碳原子的烷基; R“是具有约1至约24个碳原子的烷基，卤素，烷氧基，羟基或氨基; L是卤素，氧，烷氧基，羟基或氨基; k为1或2; m为1或2。

公开(公告)号：US07654944B1

公开(公告)日：2010-02-02

申请号：US12231106

申请日：2008-08-29

Applicant: Ping Liu

Inventor： Ping Liu

IPC: A63B26/00

CPC classification number: A63B21/078 ,  A63B21/4029 ,  A63B2210/50

Abstract: A base has a primary leg with a rear cross bar positionable on the ground. The primary leg has a raised forward end. The base has a secondary leg with a front cross bar positionable on the ground. The secondary leg is pivotably coupled to the primary leg. A seat rest is secured to the upper surface of the primary leg. A back rest is secured to the upper surface of the primary leg. A rearward adjustment assembly includes a pair of parallel adjustment bars with an upper pivot tube. The upper pivot tube pivotally couples the upper ends of the adjustment bars to the back rest. A slider is slidable along the primary leg. The adjustment bars are coupled to the slider beneath the primary tube. The adjustment bars couple the adjustment bars to the slider. In this manner pivoting of the back rest is allowed.

Abstract translation: 基座有一个主腿，后横杆可以在地面上定位。 主要的腿有一个提高的前端。 底座有一个辅助脚，前横杆定位在地面上。 辅助腿可枢转地联接到主腿。 座椅固定在主支腿的上表面。 靠背固定到主支腿的上表面。 后向调整组件包括具有上枢轴管的一对平行调节杆。 上枢轴管将调节杆的上端枢转地连接到靠背。 滑块可沿着主腿滑动。 调节杆联接到主管下方的滑块。 调节杆将调节杆连接到滑块。 以这种方式允许靠背的枢转。

公开(公告)号：US20100003415A1

公开(公告)日：2010-01-07

申请号：US11909862

申请日：2006-03-30

Applicant: Xianzhi Fu ,  Wenlin Zong ,  Ping Liu ,  Qian Shi ,  Wenxin Dai ,  Fuwang Liao ,  Xun Chen ,  Han Lin ,  Xuxu Wang ,  Wenxuan Wu ,  Yu Shao ,  Xueyong Li ,  Lixin Sun ,  Hongxian Chai

Inventor： Xianzhi Fu ,  Wenlin Zong ,  Ping Liu ,  Qian Shi ,  Wenxin Dai ,  Fuwang Liao ,  Xun Chen ,  Han Lin ,  Xuxu Wang ,  Wenxuan Wu ,  Yu Shao ,  Xueyong Li ,  Lixin Sun ,  Hongxian Chai

IPC: B05D3/02

CPC classification number: H01B3/08 ,  C04B41/009 ,  C04B41/5024 ,  C04B41/5041 ,  C04B41/87 ,  C04B2111/2061 ,  C04B2111/92 ,  C04B41/4537 ,  C04B2103/40 ,  C04B35/00

Abstract: A high voltage ceramic and glass insulator with a function film is provided to resist pollution flashover and a preparation method is provided to produce the high voltage insulators. It is a common high voltage insulator covered with a layer of nano meter level inorganic film with the function of raising pollution flashover resisting, and the film is formed on the high voltage ceramic and glass insulator surface and made of a solution containing the titanium dioxide base, and the solution containing the titanium dioxide base includes a pure titanium dioxide solution or a binary compound oxide solution containing the titanium dioxide. The invention is suitably used for the power transmission and the transform line in the areas with the circumstance seriously polluted or in the remote mountainous areas.

Abstract translation: 提供具有功能膜的高压陶瓷和玻璃绝缘子，以抵抗污染闪络，并提供制备高压绝缘子的制备方法。 它是一种普通的高压绝缘体，覆盖有一层纳米级无机膜，具有提高污染闪络电阻的功能，该膜形成在高压陶瓷和玻璃绝缘子表面上，由含有二氧化钛基底的溶液 ，含有二氧化钛基底的溶液包括纯二氧化钛溶液或含有二氧化钛的二元复合氧化物溶液。 本发明适用于在严重污染地区或偏远山区的输电和变电线路。

公开(公告)号：US20090256138A1

公开(公告)日：2009-10-15

申请号：US12101942

申请日：2008-04-11

Applicant: Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

Inventor： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

IPC: H01L51/30 ,  H01L51/40

CPC classification number: H01L21/02126 ,  H01L21/02282 ,  H01L21/3125 ,  H01L51/0036 ,  H01L51/0533

Abstract: Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

Abstract translation: 公开了具有改进的移动性的有机薄膜晶体管。 半导体层包含式（I）的半导体材料：其中R1和R2独立地选自烷基，取代的烷基，芳基和取代的芳基; 并且R 3和R 4独立地选自氢，烷基，取代的烷基，芳基和取代的芳基。 还存在硅烷化界面层，其具有从其表面朝向半导体层延伸的烷基侧链。

公开(公告)号：US20090140236A1

公开(公告)日：2009-06-04

申请号：US11946953

申请日：2007-11-29

Applicant: Yiliang Wu ,  Yuning Li ,  Ping Liu ,  Paul F. Smith ,  Hadi K. Mahabadi

Inventor： Yiliang Wu ,  Yuning Li ,  Ping Liu ,  Paul F. Smith ,  Hadi K. Mahabadi

IPC: H01L51/05 ,  H01L29/786

CPC classification number: H01L51/0049 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

Abstract: A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.

Abstract translation: 薄膜晶体管具有包含半导体和表面改性的碳纳米管的半导体层。 半导电层具有改善的电荷载流子迁移率。

公开(公告)号：US20090042700A1

公开(公告)日：2009-02-12

申请号：US12228335

申请日：2008-08-12

Applicant: Ping Liu

Inventor： Ping Liu

IPC: A63B21/075

CPC classification number: A63B21/0728 ,  A63B21/00065 ,  A63B21/075

Abstract: A handle has opposed ends and a central extent. A grip rotationally receives the central extent of the handle. An adjustment wheel is secured to each end of the handle. A side cover is fixedly secured to each end of the grip. A dowel disk is on the handle adjacent to one side cover with fingers and spaces. A plurality of cam bits are supported on the handle. A safety lock is within the side cover adjacent to the dowel disk. The safety lock has a first end extent and a second end extent with a radial recess and a central extent with an axial projection. A coil spring within the radial recess urges the safety lock radially outwardly.

公开(公告)号：US07449715B2

公开(公告)日：2008-11-11

申请号：US11399231

申请日：2006-04-06

Applicant: Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

Inventor： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

IPC: H01L29/08

CPC classification number: H01L51/0074 ,  H01L51/0036 ,  H01L51/0073 ,  H01L51/0545

Abstract: An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Abstract translation: 一种包含式或其结构（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R 2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地是合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。