公开(公告)号：US07002439B2

公开(公告)日：2006-02-21

申请号：US10663340

申请日：2003-09-15

Applicant: Xavier Rottenberg ,  Henri Jansen ,  Hendrikus Tilmans ,  Walter De Raedt

Inventor： Xavier Rottenberg ,  Henri Jansen ,  Hendrikus Tilmans ,  Walter De Raedt

IPC: H01G23/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

Abstract translation: 公开了一种微机电可切换电容器，包括衬底，底电极，沉积在所述底电极的至少一部分上的电介质层，沉积在所述介电层的至少一部分上的导电浮动电极，位于浮动 电极和第一致动区域，以便稳定电枢的向下状态位置。 该装置还可以包括第二致动区域。 本发明提供了分流开关和串联开关，其在附接到浮动电极区域的区域中具有致动，或者具有继电器致动。

公开(公告)号：US06875936B1

公开(公告)日：2005-04-05

申请号：US09869107

申请日：1999-12-20

Applicant: Kenichiro Suzuki ,  Tsunehisa Marumoto

Inventor： Kenichiro Suzuki ,  Tsunehisa Marumoto

IPC: H01H11/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  H01H1/20 ,  H01H11/06 ,  H01H59/00 ,  H01H57/00

CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2201/016 ,  B81C1/0015 ,  B81C2201/0133 ,  H01H1/20

Abstract: A micro-machine switch in accordance with the present invention includes a supporter having a predetermined height relative to a surface of a substrate, a flexible cantilever projecting from the supporter in parallel with a surface of the substrate, and having a distal end facing a gap formed between two signal lines, a contact electrode formed on the cantilever, facing the gap, a lower electrode formed on the substrate in facing relation with a part of the cantilever, and an intermediate electrode formed on the cantilever in facing relation with the lower electrode. The micro-machine switch can operate at a lower drive voltage than a voltage at which a conventional micro-machine switch operates, and can enhance a resistance of an insulating film against a voltage.

Abstract translation: 根据本发明的微型机器开关包括：相对于基板的表面具有预定高度的支撑件，从支撑件平行于基板的表面突出的柔性悬臂，并且具有面向间隙的远端 形成在两个信号线之间，形成在悬臂上的接触电极，面向间隙，形成在基板上的与电极的一部分相对的底电极，以及形成在悬臂上的中间电极，与下电极 。 微机开关可以在比常规微机开关操作的电压低的驱动电压下工作，并且可以增强绝缘膜对电压的电阻。

公开(公告)号：US20040262645A1

公开(公告)日：2004-12-30

申请号：US10835590

申请日：2004-04-30

Applicant: Corporation for National Research Initiatives

Inventor： Michael A. Huff ,  Mehmet Ozgur

IPC: H01L029/40

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (nullMEMSnull) and low-temperature co-fired ceramic (nullLTCCnull) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract translation: 使用微机电开关（“MEMS”）和低温共烧陶瓷（“LTCC”）技术的相控阵天线系统和其它类型的射频（RF）装置和系统以及制造这种相控阵天线的方法 系统和其他类型的射频（RF）设备。 每个天线或其他类型的装置包括至少两个多层陶瓷模块和在其中一个模块上制造的MEMS装置。 一旦完成了MEMS器件的制造，就将两个陶瓷模块结合在一起，密封MEMS器件，并允许所有器件层之间的电连接。 底部陶瓷模块在背面还具有用于安装集成电路的空腔。 内部层使用标准LTCC制造和低损耗介电LTCC带材料中可用的导电，电阻和高k电介质浆料形成。

公开(公告)号：US06815739B2

公开(公告)日：2004-11-09

申请号：US10147907

申请日：2002-05-20

Applicant: Michael A. Huff ,  Mehmet Ozgur

Inventor： Michael A. Huff ,  Mehmet Ozgur

IPC: H01L2980

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

公开(公告)号：US06812820B1

公开(公告)日：2004-11-02

申请号：US09554272

申请日：2000-06-06

Applicant: Yves Fouillet

Inventor： Yves Fouillet

IPC: H01H3732

CPC classification number: H01H1/0036 ,  B81B3/0024 ,  B81B2201/016 ,  B81B2201/032 ,  H01G5/16 ,  H01H2001/0042 ,  H01H2037/008 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: The invention concerns a microsystem, in particular for producing microswitches or microvalves, constituted on a substrate (50) and used for producing a shift between a first operating state and a second operating state by means of a heat actuated device with bi-metal switch effect. The heat-actuated device comprises a deformable element (51) connected, by opposite ends, to the substrate (50) so as to present naturally a deflection without stress relative to the substrate surface which faces it, said natural deflection determining the first operating state, the second operating state being produced by the heat-actuated device which induces, by the effect of temperature variation, a deformation of the deformable element (51) tending to reduce its deflection and submitting it to a compressive stress by buckling effect in a direction opposite to its natural deflection.

Abstract translation: 本发明涉及一种微系统，特别是用于制造微型开关或微型阀，其构造在基板（50）上并用于通过具有双金属开关效应的热致动装置在第一操作状态和第二操作状态之间产生换档 。 热致动装置包括通过相对端连接到基板（50）的可变形元件（51），以便相对于面向其的基板表面自然地呈现不受应力的偏转，所述自然偏转确定第一操作状态 所述第二操作状态由所述热驱动装置产生，所述热致动装置通过温度变化而引起所述可变形元件（51）的变形，所述变形元件倾向于减小其偏转，并且通过在方向上的屈曲效应使其变形为压缩应力 与其自然变形相反。

公开(公告)号：US06803534B1

公开(公告)日：2004-10-12

申请号：US09866205

申请日：2001-05-25

Applicant: Shea Chen ,  Brandon W. Pillans ,  John C. Ehmke ,  Zhimin Jamie Yao

Inventor： Shea Chen ,  Brandon W. Pillans ,  John C. Ehmke ,  Zhimin Jamie Yao

IPC: B81B300

CPC classification number: B81B3/0008 ,  B81B2201/016 ,  H01G5/16 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0084

Abstract: A micro-electro-mechanical (MEMS) switch (10, 110) has an electrode (22, 122) covered by a dielectric layer (23, 123), and has a flexible conductive membrane (31, 131) which moves between positions spaced from and engaging the dielectric layer. At least one of the membrane and dielectric layer has a textured surface (138) that engages the other thereof in the actuated position. The textured surface reduces the area of physical contact through which electric charge from the membrane can tunnel into and become trapped within the dielectric layer. This reduces the amount of trapped charge that could act to latch the membrane in its actuated position, which in turn effects a significant increase in the operational lifetime of the switch.

Abstract translation: 微机电开关（10,110,120）被称为MEMS，并且包括具有两个间隔开的导电柱（17,18）的基部（13,14,17-18）。导电部分（22 ）被提供在柱之间并被介电层（23）覆盖。膜（31,131,231）在柱之间延伸并且具有间隔开的膨胀部分（41-42,141-142,241-242），其有助于纵向膨胀 膜在其中心部分分别与电介质层间隔开并与其接合的位置之间弯曲。 一种制造开关的方法包括：提供具有对应于膨胀部分的槽或脊的顶表面的间隔材料（76,171,177,178），将膜沉积在间隔物的顶表面上，然后移除间隔物材料。

公开(公告)号：US20040124497A1

公开(公告)日：2004-07-01

申请号：US10663340

申请日：2003-09-15

Inventor： Xavier Rottenberg ,  Henri Jansen ,  Hendrikus Tilmans ,  Walter De Raedt

IPC: H01L029/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

Abstract translation: 公开了一种微机电可切换电容器，包括衬底，底电极，沉积在所述底电极的至少一部分上的电介质层，沉积在所述介电层的至少一部分上的导电浮动电极，位于浮动 电极和第一致动区域，以便稳定电枢的向下状态位置。 该装置还可以包括第二致动区域。 本发明提供了分流开关和串联开关，其在附接到浮动电极区域的区域中具有致动，或者具有继电器致动。

公开(公告)号：US06635506B2

公开(公告)日：2003-10-21

申请号：US10014660

申请日：2001-11-07

Applicant: Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

IPC: H01L2100

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

公开(公告)号：US06603238B2

公开(公告)日：2003-08-05

申请号：US10128542

申请日：2002-04-24

Applicant: Minoru Sakata ,  Takuya Nakajima ,  Tomonori Seki ,  Teruhiko Fujiwara ,  Masashi Takeuchi

Inventor： Minoru Sakata ,  Takuya Nakajima ,  Tomonori Seki ,  Teruhiko Fujiwara ,  Masashi Takeuchi

IPC: H01L3700

CPC classification number: H01H1/0036 ,  B81B7/0077 ,  B81B2201/016 ,  B81B2207/095 ,  B81C2203/0118 ,  H01H1/20 ,  H01H9/52 ,  H01H57/00 ,  H01H59/0009 ,  H01H61/02 ,  H01H67/22 ,  H01H2001/0042 ,  H01H2001/0084 ,  H01H2057/006 ,  H01H2061/006

Abstract: A thin plate-shaped substrate 21 comprised of a monocrystal is provided with a piezoelectric element 24, and both ends of a movable piece 20 whose one surface is provided with a movable contact 25 are fixed and supported to a base 11. Then, by curving the movable piece 20 via the piezoelectric element 24, the movable contact 25 is brought in and out of contact with a pair of fixed contacts 38 and 39 that face the movable contact. With this arrangement, a subminiature micro-relay having a mechanical contact mechanism that has a small resistance in turning on the contact and the desired vibration resistance, frequency characteristic and insulating property can be obtained.

公开(公告)号：US20030029705A1

公开(公告)日：2003-02-13

申请号：US10052667

申请日：2002-01-18

Applicant: Massachusetts Institute of Technology

Inventor： Jin Qiu ,  Alexander H. Slocum ,  Jeffrey H. Lang ,  Ralf Struempler ,  Michael P. Brenner ,  Jian Li

IPC: H01H057/00

CPC classification number: B81B3/0051 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/016 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H1/0036 ,  H01H1/24 ,  H01H50/005 ,  H01H59/0009 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2061/006

Abstract: A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about null of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the two stable positions.

Abstract translation: 由本发明提供的双稳态结构的特征在于包括一个偏转元件，该偏转元件具有机械约束的端点和端点之间的顺应跨度，当在沿跨度的点施加力时，基本上自由地在两个稳定位置之间偏转。 偏转元件跨度设置成沿着跨度的长度在两个稳定位置中的一个中并且以机械无应力状态弯曲。 偏转元件跨度的制造曲线包括沿着跨度长度的点处的曲线最大值，其距离跨度端点的跨度长度的至少约1/4。 偏转元件跨度被限制为基本上禁止当元件在两个稳定位置之间偏转时跨度的特征的第二弯曲模式的发展。