Abstract:
In order to cause a multi-electron source having electron emitters wired in the form of a matrix to emit electrons without any variations, there is provided an electron generating device including a multi-electron source (601) having a plurality of electron emitters (1002) wired in the form of a matrix through a plurality of data wiring layers (1004) and a plurality of scanning wiring layers (1003), and a driving circuit for driving the multi-electron source (601), the driving circuit including a first driving means (603) for applying a first voltage (Vs) to a scanning wiring layer to which an electron emitter which is to emit electrons is connected, and applying a second voltage (Vns) to a scanning wiring layer to which an electron emitter which is not to emit electrons is connected, and a second driving means (602) for applying a third voltage (Ve) to a data wiring layer to which an electron emitter which is to emit electrons is connected, and applying a fourth voltage (Vg) to a data wiring layer to which an electron emitter which is not to emit electrons is connected, wherein the second voltage (Vns) is substantially equal to the third voltage (Ve).
Abstract:
A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a row metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form row metal gives row metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.
Abstract:
A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.
Abstract:
A cold electron emission device including an emitter having a protrusion having a sharp tip and disposed at a first end of a semiconductor thin film formed on an insulation substrate; a cathode electrode disposed at a second end of the semiconductor thin film; at least one gate electrode disposed between the emitter and the cathode electrode for controlling a current flowing through the semiconductor thin film; an insulating layer arranged to cover the semiconductor thin film, cathode electrode and gate electrode, except for the emitter; and a lead electrode arranged on the insulating layer such that it surrounds the tip of the emitter, thereby making it possible to achieve a cold electron emission device with reliable current stability.
Abstract:
A process is provided for forming sharp asperities, useful as field emitters. The process comprises: patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy, and the resulting oxide is removed.
Abstract:
According to the invention, a process is provided for controlling illumination of a pixel in a field emission display. In one embodiment, the process includes the steps of providing a first voltage to the first tip array, providing a second voltage to the second tip array in which the second voltage is different than the first voltage. In another embodiment of the invention, a field emission display is provided which has a plurality of pixels, each pixel having at least a first tip array and a second tip array, a column conductor, or electrode, an electrical communication with the first tip array.
Abstract:
A process for producing a field emitter flat display includes providing a supported porous layer of a non-evaporable getter material by depositing the non-evaporable getter material on a substrate followed by sintering the deposited material. The substrate having the porous layer of non-evaporable getter material thereon is then housed in an inner space defined by opposing plates. The inner space is then evacuated and hermetically sealed. The non-evaporable getter material is preferably deposited by preparing a suspension of non-evaporable getter material particles in a suspending medium, coating a surface of a substrate with the suspension by, e.g., spraying, and sintering the coating.
Abstract:
A flat display screen includes a cathode (1) with microtips (2) for the electron bombardment of the anode (5) having phosphor elements (7r, 7g, 7b), the cathode (1) and the anode (5) separated by a vacuum space (12) containing a progressive hydrogen release source comprised of a thin layer of hydrogenated material. The progressive hydrogen release source may comprise a resistive layer (11) of the cathode (1) on which the microtips (2) are arranged. The progressive hydrogen release source provides the microtips (2) with a substantially constant emitting power.
Abstract:
MUX and DEMUX circuits using a photo gate transistor having a pair of thin film electrodes respectively serving as emission and collector electrodes. When photons with at least critical energy are irradiated onto the emission electrode, electrons are emitted from the emission electrode, so that the associated photo gate transistor can carry out a gating operation. The MUX circuit divides a plurality of electrical signals in a time division manner so that the transmission of those signals can be carried out through a single transmission line. The DEMUX circuit recovers an original signal from signals transmitted in a time division manner via a single transmission line. Input signals are received to emission electrodes while being limited in voltage level by input resistor pairs. An optical source irradiates photons to an emission electrode in sync with the application of an input signal. By the irradiation of photons, the emission electrode emits electrons which are transmitted to a collector electrode. As a result, output voltage is output. The output voltage corresponds to the quantity of current of the transmitted signal which is determined by an output resistor in accordance with voltage from a voltage source and the intensity of the irradiated photons.
Abstract:
A getter device capable of being re-activated as required and arranged in a narrow space in an envelope. The getter is arranged in a layer-like manner in an envelope of an electronic element to provide, in the envelope, a film-like getter for keeping an interior of the envelope at a vacuum. Electrons emitted from an electron feed section are impinged on the getter to activate it. The getter activated adsorbs thereon gas in an envelope of an image display device.