公开(公告)号：US5507676A

公开(公告)日：1996-04-16

申请号：US488232

申请日：1995-06-07

Applicant: Robert H. Taylor ,  Jules D. Levine

Inventor： Robert H. Taylor ,  Jules D. Levine

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90. Also disclosed is an arrangement of emitter clusters comprising conductive plates 102 having a plurality of microtip emitters 104 formed thereon, each cluster adjacent and laterally spaced from a stripe conductor 100 by a region 106 of a resistive material. The conductive stripes 100 are substantially parallel to each other, are spaced from one another by two conductive plates 102, and are joined by bus regions 110 outside the active area of the display.

公开(公告)号：US5448132A

公开(公告)日：1995-09-05

申请号：US129991

申请日：1993-09-30

Applicant: Hiroshi Komatsu

Inventor： Hiroshi Komatsu

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01L23/544 ,  H03F3/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J21/105 ,  H01J3/022 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

Abstract: An array field emitter device utilizes field emission devices disposed in a matrix or array each comprising an opening in an insulating layer with an upwardly extended cathode with a tip disposed centrally within the opening and a gate electrode substantially concentric with each the cathode tip and having a lip extending into the opening forming a downwardly descending lip projection. Such an array display device can be of the multiplex driven type or can be of the active matrix type.

Abstract translation: 阵列场发射器件利用放置在矩阵或阵列中的场致发射器件，每个阵列或阵列包括绝缘层中的开口，具有向上延伸的阴极，顶端设置在开口内的中心，以及与每个阴极尖端基本同心的栅电极， 唇部延伸到开口中，形成向下的下降的唇突起。 这种阵列显示装置可以是多路驱动型或可以是有源矩阵型。

公开(公告)号：US5410158A

公开(公告)日：1995-04-25

申请号：US007229

申请日：1993-01-22

Applicant: Robert C. Kane ,  James E. Jaskie

Inventor： Robert C. Kane ,  James E. Jaskie

IPC: H01J31/12 ,  H01L29/08 ,  H01L29/16 ,  H01L27/12 ,  H01L45/00 ,  H01L49/02

CPC classification number: H01L29/1602 ,  H01J31/127 ,  H01L29/0821 ,  H01J2201/319

Abstract: Apparatus including a diamond semiconductor material bipolar transistor having associated therewith a distally disposed iso-collector. The iso-collector, when operated with a suitable voltage, provides a communicating electric field to the bipolar transistor collector which, in concert with a voltage coupled to the transistor base places the apparatus in an ON mode to induce electrons to be emitted from the collector and to be subsequently collected at the iso-collector. An iso-base is optionally, distally disposed relative to the base of the bipolar transistor.

Abstract translation: 包括金刚石半导体材料双极晶体管的装置，其具有与其远端配置的等收集器相关联。 等离子体收集器当以合适的电压操作时，向双极晶体管集电极提供通信电场，该耦合电极与耦合到晶体管基极的电压一起使得该装置处于导通模式，以诱发电子从集电极发射 并随后在等收集器处收集。 任选地，相对于双极晶体管的基极远离地设置等基极。

公开(公告)号：US5404074A

公开(公告)日：1995-04-04

申请号：US77321

申请日：1993-06-16

Applicant: Hidetoshi Watanabe ,  Toshio Ohoshi

Inventor： Hidetoshi Watanabe ,  Toshio Ohoshi

IPC: G09F9/30 ,  G09G3/22 ,  H01J29/48 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J29/481 ,  G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/319

Abstract: An image display comprises a plurality of picture elements arranged in a matrix and each connected to a switching thin film transistor and a capacitor. The switching thin film transistor is controlled to drive the corresponding picture element. The image display is capable of areal luminance and of displaying images in a satisfactorily high brightness.

Abstract translation: 图像显示器包括以矩阵形式排列并分别连接到开关薄膜晶体管和电容器的多个像素。 控制开关薄膜晶体管驱动相应的像素。 图像显示器能够具有面部亮度并以令人满意的高亮度显示图像。

公开(公告)号：US5173634A

公开(公告)日：1992-12-22

申请号：US621199

申请日：1990-11-30

Applicant: Robert C. Kane

Inventor： Robert C. Kane

IPC: H01J3/02 ,  H01J21/10

CPC classification number: H01J3/022 ,  H01J21/105 ,  H01J2201/319

Abstract: A field emission device is set forth for providing a current-regulating and potential equilibrium function.

Abstract translation: 阐述了用于提供电流调节和电位平衡功能的场致发射器件。

公开(公告)号：US5075595A

公开(公告)日：1991-12-24

申请号：US645523

申请日：1991-01-24

Applicant: Robert C. Kane

Inventor： Robert C. Kane

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/319

Abstract: An electronic device employing controlled cold-cathode field-induced electron emission device(s) is set forth wherein controlling sources, drivers, select logic, and interconnecting lines and paths are integrated directly within a single structure.

公开(公告)号：US08390538B2

公开(公告)日：2013-03-05

申请号：US13244078

申请日：2011-09-23

Applicant: Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

Inventor： Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

IPC: G09G5/00

CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connected to a current source in response to a scan signal, a gate receiving a data signal, and a drain connected to the field emitter. The field emitter is made of carbon material such as diamond, diamond like carbon, carbon nanotube or carbon nanofiber. The cathode may include multiple field emitters, and the TFT may include multiple transistors having gates to which the same signal is applied, sources to which the same signal is applied, and drains respectively connected to the field emitters. An active layer of the TFT is made of a semiconductor film such as amorphous silicon, micro-crystalline silicon, polycrystalline silicon, wide-band gap material like ZnO, or an organic semiconductor.

Abstract translation: 场发射像素包括其上形成有发射电子的场致发射体的阴极，形成从场致发射体吸收电子的荧光体的阳极以及响应于电流源的源极的薄膜晶体管（TFT） 扫描信号，接收数据信号的栅极和连接到场发射器的漏极。 场发射体由诸如金刚石，类金刚石碳，碳纳米管或碳​​纳米纤维的碳材料制成。 阴极可以包括多个场发射器，并且TFT可以包括多个晶体管，其具有施加相同信号的栅极，施加相同信号的源极以及分别连接到场发射极的漏极。 TFT的有源层由诸如非晶硅，微晶硅，多晶硅，宽带隙材料如ZnO的半导体膜或有机半导体制成。

公开(公告)号：US07671525B2

公开(公告)日：2010-03-02

申请号：US11584128

申请日：2006-10-20

Applicant: Si-Myeong Kim

Inventor： Si-Myeong Kim

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J1/304 ,  H01J31/127 ,  H01J2201/319

Abstract: An electron emission device and display including the same include a substrate; a cathode electrode including a first electrode portion formed on the substrate and having opening portions, and second electrode portions placed within respective ones of the opening portions such that the second electrodes are separated from the first electrode; a resistance layer electrically interconnecting the first electrode portion and the second electrode portions of the cathode electrode; and electron emission regions electrically connected to the second electrode portions. A width of the second electrode portions or of the resistance layer between the first and second electrode portions varies along a longitudinal direction of the cathode electrode.

Abstract translation: 包括其的电子发射装置和显示器包括基板; 阴极，其包括形成在所述基板上并具有开口部的第一电极部，以及设置在所述开口部的各个开口部内的第二电极部，使得所述第二电极与所述第一电极分离; 使第一电极部和阴极的第二电极部电连接的电阻层; 以及与第二电极部电连接的电子发射区域。 第一电极部分或第二电极部分之间的电阻层的宽度沿着阴极电极的长度方向变化。

公开(公告)号：US20090185661A1

公开(公告)日：2009-07-23

申请号：US12113726

申请日：2008-05-01

Applicant: Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

Inventor： Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

IPC: H01J35/06 ,  H05B37/02

CPC classification number: H01J3/021 ,  H01J1/30 ,  H01J1/3048 ,  H01J3/027 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/319 ,  H01J2203/0204 ,  H01J2235/062 ,  H01J2235/068

Abstract: A system and method for addressing individual electron emitters in an emitter array is disclosed. The system includes an emitter array comprising a plurality of emitter elements arranged in a non-rectangular layout and configured to generate at least one electron beam and a plurality of extraction grids positioned adjacent to the emitter array, each extraction grid being associated with at least one emitter element to extract the at least one electron beam therefrom. The field emitter array system also includes a plurality of voltage control channels connected to the plurality of emitter elements and the plurality of extraction grids such that each of the emitter elements and each of the extraction grids is individually addressable. In the field emitter array system, the number of voltage control channels is equal to the sum of a pair of integers closest in value whose product equals the number of emitter elements.

Abstract translation: 公开了一种用于寻址发射极阵列中的各个电子发射体的系统和方法。 该系统包括发射器阵列，其包括以非矩形布局布置的多个发射体元件，并且被配置为产生至少一个电子束和邻近发射器阵列定位的多个提取栅格，每个提取栅格与至少一个 发射极元件从其中提取至少一个电子束。 场发射器阵列系统还包括连接到多个发射体元件和多个提取栅格的多个电压控制通道，使得每个发射极元件和每个提取栅格可单独寻址。 在场发射极阵列系统中，电压控制通道的数量等于产品等于发射极元件数量的最接近值的一对整数之和。

公开(公告)号：US20090072750A1

公开(公告)日：2009-03-19

申请号：US12233859

申请日：2008-09-19

Applicant: Akintunde I. Akinwande ,  Luis Fernando Velasquez-Garcia

Inventor： Akintunde I. Akinwande ,  Luis Fernando Velasquez-Garcia

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.

Abstract translation: 提供场发射器阵列结构。 场发射极阵列结构包括形成在半导体衬底上的多个垂直未门控晶体管结构。 半导体衬底包括多个垂直柱结构，以限定所述未门控晶体管结构。 在所述垂直非门控晶体管结构上形成多个发射极结构。 所述发射极结构中的每一个以压载方式定位在所述垂直非门控晶体管结构中的一个上，以便允许所述垂直非门控晶体管结构有效地提供具有较大饱和电流的高动态电阻。