公开(公告)号：US12198922B2

公开(公告)日：2025-01-14

申请号：US17947819

申请日：2022-09-19

Applicant: Applied Materials, Inc.

Inventor： Vilen K. Nestorov

IPC: G01N21/88 ,  C23C16/48 ,  F27B17/00 ,  G01N21/66 ,  H01K1/14 ,  H01K1/16 ,  H01K3/02 ,  H01K7/00 ,  H05B3/00

Abstract: Examples disclosed herein relate to a to a pitch gradient in a lamp filament, and a method of making. In one implementation, a lamp has a bulb filled with a gas. A filament is disposed within the bulb. The filament has a plurality of coils that include a first coil having a first point. The plurality of coils includes a second coil having a second point, and a third coil having a third point. The pitch gradient is defined by a first pitch between the second point and the first point, and a second pitch between the third point and the second point. The second pitch is greater than the first pitch. The second point is 360 degrees away from the first point. The third point is 360 degrees from the second point. A terminal coil is electrically coupled to at least the first coil, the second coil, and the third coil.

公开(公告)号：US12195867B2

公开(公告)日：2025-01-14

申请号：US17538245

申请日：2021-11-30

Applicant: Applied Materials, Inc.

Inventor： Kwan Wook Roh ,  Xundong Dai ,  Keith Edward Ypma ,  Scott A. Wehrmann

IPC: C25D21/14 ,  C25D3/38 ,  C25D7/12 ,  C25D17/00 ,  C25D21/02

Abstract: Electrochemical deposition systems and methods are described that have enhanced crystallization prevention features. The systems may include a bath vessel operable to hold an electrochemical deposition fluid having a metal salt dissolved in water. The systems may also include sensors including a thermometer and concentration sensor operable to measure characteristics of the electrochemical deposition fluid. The systems further include a computer configured to perform operations that include receiving system data from the electrochemical system and generating a control signal to change a characteristic of the electrochemical deposition fluid to prevent crystallization of a metal salt in the fluid. The computer generates the control signal based on processing that may include comparing an actual metal salt concentration in the electrochemical deposition fluid to a theoretical solubility limit for the metal salt in the fluid.

公开(公告)号：US12195635B1

公开(公告)日：2025-01-14

申请号：US18417560

申请日：2024-01-19

Applicant: Applied Materials, Inc.

Inventor： Kulandaivelu Sivanandan ,  Sivapackia Ganapathiappan ,  Nag Bhushanam Patibandla

IPC: C09D11/00 ,  C09D11/101 ,  C09D11/322 ,  C09D11/52 ,  H10K50/115

Abstract: Liquid dispersions of quantum dot particles include an acrylic medium having a boiling point in a range of from greater than or equal to 100° C. to less than or equal to 500° C., quantum dot particles dispersed in the acrylic medium, a photo-initiator, and a surface additive. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and ink-jet printing of color conversion layers in the manufacture of LED and micro-LED panels for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are also disclosed.

公开(公告)号：US20250012960A1

公开(公告)日：2025-01-09

申请号：US18746195

申请日：2024-06-18

Applicant: Applied Materials, Inc.

Inventor： Kunal SHASTRI ,  Evan WANG ,  Simon LORENZO ,  David Alexander SELL ,  Kevin MESSER ,  Samarth BHARGAVA

IPC: F21V8/00 ,  G02B1/11

Abstract: Embodiments of the disclosure provided herein include waveguide combiners. More specifically, embodiments described herein provide for waveguide combiners with a waveguide layer and a coating having a tapered portion disposed thereover. The waveguide includes one or more gratings, the one or more gratings including a plurality of grating structures disposed over a waveguide substrate, wherein the grating structures include a waveguide material, and the plurality of grating structures include exterior grating structures at outer edges of the one or more gratings. A waveguide layer is disposed over the waveguide substrate between the exterior grating structures and an edge of the waveguide substrate, the waveguide layer including the waveguide material, and a coating disposed over the waveguide layer, the coating having a tapered portion that is tapered from at least one of the exterior grating structures to a planar portion of the coating.

公开(公告)号：US12191113B2

公开(公告)日：2025-01-07

申请号：US17827204

申请日：2022-05-27

Applicant: Applied Materials, Inc.

Inventor： Tyler Wills ,  George M. Gammel ,  Eric Donald Wilson ,  Jay T. Scheuer ,  Xiangdong He ,  Shardul Patel ,  Robert C. Lindberg

IPC: H01J37/304 ,  H01J37/317

Abstract: Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.

公开(公告)号：US20250006563A1

公开(公告)日：2025-01-02

申请号：US18882362

申请日：2024-09-11

Applicant: Applied Materials, Inc.

Inventor： Milan Pesic

IPC: H01L21/66 ,  H01L29/24

Abstract: A method of characterizing defects in semiconductor layers may include forming a first electrode, a first barrier layer, a semiconductor layer, and a second electrode, where the first barrier layer is between the first electrode and the semiconductor layer, and the semiconductor layer is between the first barrier layer and the second electrode. The method may also include causing current to flow through the semiconductor layer, where the first barrier layer prevents the current from entering a conduction band of the semiconductor layer and instead causes current to flow through defects in the semiconductor layer. The method may also include characterizing the defects in the semiconductor layer based on the current flowing through the defects in the semiconductor layer.

公开(公告)号：US20250003806A1

公开(公告)日：2025-01-02

申请号：US18215040

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Khokan C. PAUL ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Vinh N. TRAN

IPC: G01J5/80 ,  C30B25/10 ,  C30B25/12

Abstract: The present disclosure relates to chamber kits, systems, and methods for calibrating temperature sensors for semiconductor manufacturing. In one or more embodiments, a chamber kit for processing chambers applicable for semiconductor manufacturing includes a plate formed of a transparent material. The plate includes an opening formed in an outer face of the plate. The chamber kit includes a first calibration substrate positioned at least partially in the opening of the plate, and the first calibration substrate is formed of a first material. The chamber kit includes a second calibration substrate positioned at least partially in the opening of the plate, and the second calibration substrate is formed of a second material that is different than the first material.

公开(公告)号：US20250001547A1

公开(公告)日：2025-01-02

申请号：US18883149

申请日：2024-09-12

Applicant: Applied Materials, Inc.

Inventor： Kevin H. Song ,  Benedict W. Pang

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/3105 ,  H01L21/321

Abstract: Exemplary substrate electrochemical planarization apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include a retaining wall extending from the chuck body. The apparatuses may include an electrolyte delivery port disposed radially inward of the retaining wall. The apparatuses may include a spindle that is positionable over the chuck body. The apparatuses may include an end effector coupled with a lower end of the spindle. The end effector may be conductive. The apparatuses may include an electric contact extending from the chuck body or retaining wall. The apparatuses may include a current source. The current source may be configured to provide an electric current to an electrolyte within an open interior defined by the retaining wall.

公开(公告)号：US12185643B2

公开(公告)日：2024-12-31

申请号：US18177096

申请日：2023-03-01

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Shriram Mangipudi ,  Mohammad Kamruzzaman Chowdhury ,  Shane Lavan ,  Zhebo Chen ,  Yong Cao ,  Nag B. Patibandla

IPC: H10N60/85 ,  G02B6/12 ,  H10N60/12

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

公开(公告)号：US12183631B2

公开(公告)日：2024-12-31

申请号：US17839817

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Suketu Parikh ,  Alexander Jansen ,  Joung Joo Lee ,  Lequn Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/532

Abstract: Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first copper layer, depositing a second copper layer with the dopant with a second dopant content of zero percent to 0.5 percent by sputtering a second copper-based target at the first temperature of zero degrees Celsius to 200 degrees Celsius, and annealing the substrate at a third temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the second copper layer.