公开(公告)号：US10910226B2

公开(公告)日：2021-02-02

申请号：US16335968

申请日：2017-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.

公开(公告)号：US10854784B2

公开(公告)日：2020-12-01

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/40

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

公开(公告)号：US10852182B2

公开(公告)日：2020-12-01

申请号：US16024437

申请日：2018-06-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hoa Vu ,  Andrey Lysov

IPC: G01J1/42 ,  H05B47/11 ,  G01J1/32 ,  G01J1/44

Abstract: An ambient light detector, a detector array and a method are disclosed. In an embodiment an ambient light sensor includes a first plurality of sensor elements, each sensor element configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, wherein the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and wherein a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

公开(公告)号：US20200370953A1

公开(公告)日：2020-11-26

申请号：US16990536

申请日：2020-08-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hoa Vu ,  Andrey Lysov

IPC: G01J1/42 ,  H05B47/11 ,  G01J1/32 ,  G01J1/44

Abstract: An ambient light detector, a detector array and a method are disclosed. An ambient light sensor includes a first plurality of sensor elements, where each sensor element is configured to provide a signal in response to a level of illumination and a second plurality of reference elements, each reference element configured to provide a reference signal and each including a blocking element configured to shield the respective reference element from being illuminated, where the first plurality is larger than the second plurality and the first plurality of sensor elements and the second plurality of reference elements are arranged in an array, and where a sensor element and a reference element are laterally arranged on or in a common layer substrate sharing at least one common first contact.

公开(公告)号：US20200345238A1

公开(公告)日：2020-11-05

申请号：US16479667

申请日：2018-01-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Mikko Perälä ,  Désirée QUEREN ,  Hubert HALBRITTER

IPC: A61B5/0205 ,  A61B5/1455 ,  A61B5/00

Abstract: A sensor that detects a heart rate and/or a blood oxygen content includes a radiation source and a photodetector, wherein the radiation source includes a light-emitting diode array, the light-emitting diode array includes a plurality of emission regions, the emission regions each include a first light-emitting diode and a second light-emitting diode, the first light-emitting diode includes a first wavelength, the second light-emitting diode includes a second wavelength, and a distance between the first light-emitting diode and the second light-emitting diode within the emission regions is 100 micrometers or less.

公开(公告)号：US10826276B2

公开(公告)日：2020-11-03

申请号：US16347026

申请日：2017-11-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Lauer ,  Tomasz Swietlik

IPC: H01S5/32 ,  H01S5/10 ,  H01S5/22 ,  H01S5/323

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

公开(公告)号：US10825961B2

公开(公告)日：2020-11-03

申请号：US16205412

申请日：2018-11-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Richter ,  Christian Gatzhammer

IPC: H01L33/48 ,  H01L31/18 ,  H01L31/0203 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L29/66 ,  H01L29/417 ,  H01L33/50 ,  H01L33/62

Abstract: A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip.

公开(公告)号：US20200332182A1

公开(公告)日：2020-10-22

申请号：US16911050

申请日：2020-06-24

Applicant: OSRAM Opto Semiconductors GmbH ,  OSRAM GmbH

Inventor： Tim Fiedler ,  Sonja Tragl ,  Stefan Lange

IPC: C09K11/02 ,  C09K11/77 ,  C09K11/08

Abstract: Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.

公开(公告)号：US10804332B2

公开(公告)日：2020-10-13

申请号：US16194238

申请日：2018-11-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Anant Aggarwal ,  Alireza Safaee

IPC: H01L27/32 ,  H01L27/15 ,  G09G3/3283 ,  G09G3/3216

Abstract: A display, a circuit arrangement for a display and a method of operating a display are disclosed. In an embodiment a display includes a voltage supply and a plurality of pixels. Each pixel includes a given number of light emitters, the light emitters being arranged in parallel electric lines with a light emitter per electric line, wherein the voltage supply is adapted to provide an electric voltage to each of the parallel electric lines. Each electric line comprises a current control element, wherein the current control element of an electric line is configured to control an electric current flowing through the light emitter arranged in the electric line.

公开(公告)号：US20200321496A1

公开(公告)日：2020-10-08

申请号：US16909685

申请日：2020-06-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan PIQUETTE ,  Adam SCOTCH ,  Maxim N. TCHOUL ,  Gertrud KRAEUTER

IPC: H01L33/50 ,  H01L33/56

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.