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1.发明公开公开(公告)号：US20230283040A1
公开(公告)日：2023-09-07
申请号：US18006077
申请日：2021-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Jan Wagner , Lars Naehle , Sven Gerhard , Alfred Lell , Harald Koenig , Christoph Eichler , Georg Brüderl , Martin Rudolf Behringer
CPC classification number: H01S5/0207 , H01S5/4087 , H01S5/22 , H01S5/4031 , H01S5/026 , H01L33/0075 , H01L33/32 , H01S5/34
Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation. The invention also relates to a radiation-emitting semiconductor body.
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公开(公告)号：US10910226B2
公开(公告)日：2021-02-02
申请号：US16335968
申请日：2017-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad Ali , Thomas Adlhoch
IPC: H01L21/285 , H01S5/042 , H01L33/00 , H01L21/268
Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
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公开(公告)号：US20150255956A1
公开(公告)日：2015-09-10
申请号：US14430685
申请日：2013-09-03
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Uwe Strauß , Teresa Wurm , Adrian Stefan Avramescu , Georg Brüderl , Christoph Eichler , Sven Gerhard
CPC classification number: H01S5/2031 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S5/4031
Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.
Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。
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Patent Agency Ranking
公开(公告)号：US12021350B2
公开(公告)日：2024-06-25
申请号：US17289124
申请日：2019-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jan Wagner , Werner Bergbauer , Christoph Eichler , Alfred Lell , Georg Brüderl , Matthias Peter
CPC classification number: H01S5/4031 , H01S5/34333
Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y
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公开(公告)号：US09373937B2
公开(公告)日：2016-06-21
申请号：US14430685
申请日：2013-09-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauβ , Teresa Wurm , Adrian Stefan Avramescu , Georg Brüderl , Christoph Eichler , Sven Gerhard
CPC classification number: H01S5/2031 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S5/4031
Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.
Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。
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公开(公告)号：US20220013990A1
公开(公告)日：2022-01-13
申请号：US17289124
申请日：2019-11-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jan Wagner , Werner Bergbauer , Christoph Eichler , Alfred Lell , Georg Brüderl , Matthias Peter
Abstract: In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlxInyGa1-x-yN with 0≤x≤1, 0≤y
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公开(公告)号：US20200028024A1
公开(公告)日：2020-01-23
申请号：US16335968
申请日：2017-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad All , Thomas Adlhoch
Abstract: A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.
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公开(公告)号：US20190173264A1
公开(公告)日：2019-06-06
申请号：US16092495
申请日：2017-03-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Georg Brüderl
Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
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