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    Driving method of liquid crystal display device
    144.
    发明授权
    Driving method of liquid crystal display device 有权

    公开(公告)号：US09448451B2

    公开(公告)日：2016-09-20

    申请号：US14749686

    申请日：2015-06-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka ,  Koji Kusunoki

    IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368

    CPC classification number: G02F1/136213 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3648 ,  G09G2330/021 ,  G09G2330/027

    Abstract: It is an object to provide a liquid crystal display device and a driving method of a liquid crystal display device in each of which deterioration of an image display function can be suppressed and power consumption can be sufficiently reduced. In the liquid crystal display device, a fixed potential is input to a capacitor before a power source is turned off, so that a potential difference between electrodes of the capacitor disappears (capacitance becomes almost zero) such that electric field is not applied to liquid crystals, whereby the liquid crystals are in an initial state. When the supply of the power source is stopped after an initial-state image is displayed, unnecessary electric field is not continuously applied to the liquid crystals in an off state, whereby the liquid crystals can be in the stable initial state; therefore, the liquid crystals can be prevented from deteriorating.

    Semiconductor device, image display device, storage device, and electronic device
    145.
    发明授权
    Semiconductor device, image display device, storage device, and electronic device 有权
    半导体装置，图像显示装置，存储装置以及电子装置

    公开(公告)号：US08994439B2

    公开(公告)日：2015-03-31

    申请号：US13862932

    申请日：2013-04-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Makoto Kaneyasu ,  Kouhei Toyotaka

    IPC: H03K17/16 ,  G09G3/36 ,  G09G3/32 ,  H03K3/012

    CPC classification number: H03K3/012 ,  G09G3/3266 ,  G09G3/3677 ,  G09G2300/0842 ,  G09G2310/0291 ,  G09G2330/021

    Abstract: A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.

    Abstract translation: 提供具有降低的功耗并且包括选择晶体管的半导体器件。 提供了一种半导体装置，其中用于输入电源电位的布线和端子的数量减少并且以高速运行。 连接到与选择晶体管的栅极连接的栅极线的缓冲电路具有通过使用高电源电位产生高于高电源电位的电位并根据选择信号输出电位的功能。 自举电路提高输入到包括在缓冲电路中的多个逆变器中最靠近输出侧的逆变器的高电源电位。 此外，通过在缓冲电路中设置延迟电路，自举电路在比选择信号的输入更晚的定时开始提高电位。

    SEMICONDUCTOR CIRCUIT
    146.
    发明申请
    SEMICONDUCTOR CIRCUIT 有权
    半导体电路

    公开(公告)号：US20140347129A1

    公开(公告)日：2014-11-27

    申请号：US14454791

    申请日：2014-08-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka

    IPC: H03F3/45

    CPC classification number: H03F3/45071 ,  H03F3/005 ,  H03F3/45 ,  H03F3/45475 ,  H03F2203/45551

    Abstract: A semiconductor circuit which can have stable input output characteristics is provided. Specifically, a semiconductor circuit in which problems caused by the leakage current of a switching element are suppressed is provided. A field-effect transistor in which a wide band gap semiconductor, such as an oxide semiconductor, is used in a semiconductor layer where a channel is formed is used for a switching element included in a switched capacitor circuit. Such a transistor has a small leakage current in an off state. When the transistor is used as a switching element, a semiconductor circuit which has stable input output characteristics and in which problems caused by the leakage current are suppressed can be fabricated.

    Abstract translation: 提供了可以具有稳定的输入输出特性的半导体电路。 具体地说，提供了抑制由开关元件的漏电流引起的问题的半导体电路。 在形成沟道的半导体层中使用诸如氧化物半导体的宽带隙半导体的场效应晶体管用于开关电容电路中所包含的开关元件。 这种晶体管在断开状态下具有小的漏电流。 当晶体管用作开关元件时，可以制造出具有稳定的输入输出特性并且由漏电流引起的问题被抑制的半导体电路。

    SEMICONDUCTOR DEVICE
    147.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140337603A1

    公开(公告)日：2014-11-13

    申请号：US14336142

    申请日：2014-07-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

    IPC: H01L27/108 ,  G06F15/76 ,  H01L29/24

    CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

    Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

    Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

    Display device
    148.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US08884302B2

    公开(公告)日：2014-11-11

    申请号：US13777106

    申请日：2013-02-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiko Inoue ,  Hiroyuki Miyake ,  Kouhei Toyotaka

    IPC: H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1251

    Abstract: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

    Abstract translation: 一种半导体器件，包括在绝缘表面上彼此分开形成的第一栅电极和第二栅电极，包括与第一栅极重叠的区域的氧化物半导体膜，其间插入有栅极绝缘膜，与第二栅极重叠的区域 栅极电极，其间插入有栅极绝缘膜，以及与第一栅极电极和第二栅极电极都不重叠的区域，以及覆盖栅极绝缘膜，第一栅极电极，第二栅极电极和氧化物半导体的绝缘膜 膜，并且与氧化物半导体膜直接接触。

    Pulse signal output circuit and shift register
    149.
    发明授权
    Pulse signal output circuit and shift register 有权
    脉冲信号输出电路和移位寄存器

    公开(公告)号：US08693617B2

    公开(公告)日：2014-04-08

    申请号：US13891364

    申请日：2013-05-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiko Amano ,  Kouhei Toyotaka ,  Hiroyuki Miyake ,  Aya Miyazaki ,  Hideaki Shishido ,  Koji Kusunoki

    IPC: G11C19/00

    CPC classification number: G11C19/28 ,  G09G3/3677 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/0286 ,  G11C19/184 ,  H01L25/03 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L2924/0002 ,  H03K19/0013 ,  H05K7/02 ,  H01L2924/00

    Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.

    Abstract translation: 目的在于提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。 根据所公开的发明的一个实施例的脉冲信号输出电路包括第一至第十晶体管。 沟道宽度W与第一晶体管的沟道长度L和第三晶体管的W / L的比率W / L都大于第六晶体管的W / L。 第五晶体管的W / L大于第六晶体管的W / L。 第五晶体管的W / L等于第七晶体管的W / L。 第三晶体管的W / L大于第四晶体管的W / L。 通过这样的结构，可以提供能够稳定运行的脉冲信号输出电路和包括脉冲信号输出电路的移位寄存器。

    SEMICONDUCTOR DEVICE
    150.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130193435A1

    公开(公告)日：2013-08-01

    申请号：US13799483

    申请日：2013-03-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L21/84 ,  H01L23/552 ,  H01L23/60 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0222 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/20 ,  H01L28/60 ,  H01L29/78609 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

    Abstract translation: 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

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