公开(公告)号：US09978800B2

公开(公告)日：2018-05-22

申请号：US15293220

申请日：2016-10-13

Applicant: Sony Corporation

Inventor： Yukihiro Kiyota ,  Keiji Mabuchi

IPC: H04N5/76 ,  H01L27/146 ,  H04N5/369 ,  H04N5/378

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/369 ,  H04N5/378

Abstract: Provided is a solid-state image pickup device including: a plurality of pixels, each of which includes a photoelectric conversion portion and a pixel transistor formed in a front surface side of a substrate, wherein a rear surface side of the substrate is set as a light receiving plane of the photoelectric conversion portion; and an element, which becomes a passive element or an active element, which is disposed in the front surface side of the substrate so as to be superimposed on the photoelectric conversion portion.

公开(公告)号：US20180122849A1

公开(公告)日：2018-05-03

申请号：US15858204

申请日：2017-12-29

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216 ,  H01L23/544

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US20180108690A1

公开(公告)日：2018-04-19

申请号：US15845694

申请日：2017-12-18

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/1469 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

公开(公告)号：US09859324B2

公开(公告)日：2018-01-02

申请号：US15225303

申请日：2016-08-01

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L27/146 ,  H01L23/544 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US09712767B2

公开(公告)日：2017-07-18

申请号：US15205464

申请日：2016-07-08

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/365 ,  H01L27/146 ,  H04N5/357 ,  H04N5/378 ,  H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/365 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3575 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device includes a pixel unit in which a plurality of pixels converting physical quantities into electric signals are arranged in a two-dimensional shape, a vertical signal line for reading signals from the pixels, and column circuits arranged corresponding to columns of the pixel unit and collecting the signals from the vertical signal line at the inside of the pixel unit.

公开(公告)号：US20170062499A1

公开(公告)日：2017-03-02

申请号：US15348556

申请日：2016-11-10

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/1469 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

Abstract translation: 本文描述了固态成像装置和制造固态成像装置的方法。 作为示例，固态成像装置包括形成在传感器基板上的第一布线层和形成在电路基板上的第二布线层。 传感器基板耦合到电路基板，第一布线层和第二布线层位于传感器基板和电路基板之间。 第一电极形成在第一布线层的表面上，第二电极形成在第二布线层的表面上。 第一电极与第二电极电接触。

公开(公告)号：US09531972B2

公开(公告)日：2016-12-27

申请号：US14593702

申请日：2015-01-09

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/355 ,  H04N5/359 ,  H04N5/378 ,  H04N5/374 ,  H01L27/146 ,  H04N5/345 ,  H04N5/353

CPC classification number: H01L27/14654 ,  H04N5/3452 ,  H04N5/3535 ,  H04N5/35581 ,  H04N5/3591 ,  H04N5/374 ,  H04N5/378

Abstract: a CMOS image sensor including a pixel array unit having pixels arranged in even-numbered pixel rows and odd-numbered pixel rows. A reading operation performed such that a first signal of a first pixel group is read in a first accumulation time, and a second signal of a second pixel group is read in a second accumulation time shorter than said first accumulation time.

Abstract translation: CMOS图像传感器包括具有排列在偶数像素行和奇数像素行中的像素的像素阵列单元。 执行读取操作，使得在第一累积时间中读取第一像素组的第一信号，并且在比所述第一累积时间短的第二累积时间中读取第二像素组的第二信号。

公开(公告)号：US20160255287A1

公开(公告)日：2016-09-01

申请号：US15152349

申请日：2016-05-11

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/347 ,  H04N5/372 ,  H04N5/353

CPC classification number: H04N5/347 ,  H04N5/343 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/37213 ,  H04N5/37457 ,  H04N9/045

Abstract: An electronic apparatus includes: a pixel array section in which pixels including photoelectric conversion sections that generate signal charges corresponding to amounts of light, charge accumulation sections that receive the signal charges from the corresponding photoelectric conversion sections and that are shared thereby, and pixel transistors that read out the signal charges generated by the corresponding photoelectric conversion sections and that are shared thereby are two-dimensionally arranged in a matrix; a solid-state image capture device including a scanner that can drive the pixels so that exposure periods of all of the pixels are simultaneously started, that can drive the pixels so that the exposure periods of all of the pixels are simultaneously ended, and that sequentially selects and scans the pixels in readout periods; and a mechanical shutter that determines an end of the exposure periods for still-image shooting.

Abstract translation: 电子设备包括：像素阵列部分，其中包括产生对应于光量的信号电荷的光电转换部分的像素，从相应的光电转换部分接收信号电荷并由其共享的电荷累积部分，以及像素晶体管， 读取由相应的光电转换部产生的信号电荷，并且共享的信号电荷被二维排列成矩阵; 一种固态图像捕获装置，包括可以驱动像素的扫描器，使得所有像素的曝光周期同时开始，这可以驱动像素，使得所有像素的曝光周期同时结束，并且依次 在读出期间选择和扫描像素; 以及确定静止图像拍摄的曝光期间的结束的机械快门。

公开(公告)号：US20160198106A1

公开(公告)日：2016-07-07

申请号：US15070081

申请日：2016-03-15

Applicant: Sony Corporation

Inventor： Toshifumi Wakano ,  Keiji Mabuchi

IPC: H04N5/357 ,  H04N5/3745 ,  H04N5/372 ,  H04N5/378

CPC classification number: H04N5/3575 ,  H04N5/372 ,  H04N5/37455 ,  H04N5/378

Abstract: A solid state image pickup device is provided that includes a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the plurality of pixels. The capacitor is operatively configured as a stacked capacitor or a trench capacitor.

公开(公告)号：US09386250B2

公开(公告)日：2016-07-05

申请号：US14701972

申请日：2015-05-01

Applicant: Sony Corporation

Inventor： Toshifumi Wakano ,  Keiji Mabuchi

IPC: H04N5/3745 ,  H04N5/372 ,  H04N5/357 ,  H04N5/378

CPC classification number: H04N5/3575 ,  H04N5/372 ,  H04N5/37455 ,  H04N5/378

Abstract: A solid state image pickup device is provided that includes a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the plurality of pixels. The capacitor is operatively configured as a stacked capacitor or a trench capacitor.