公开(公告)号：US20220344383A1

公开(公告)日：2022-10-27

申请号：US17384956

申请日：2021-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Shih-Han Huang

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor having an image sensing element surrounded by a BDTI structure, and an associated method of formation. In some embodiments, a first image sensing element and a second image sensing element are arranged next to one another within an image sensing die. A pixel dielectric stack is disposed along a back of the image sensing die overlying the image sensing elements. The pixel dielectric stack includes a first high-k dielectric layer and a second high-k dielectric layer. The BDTI structure is disposed between the first image sensing element and the second image sensing element and extends from the back of the image sensor die to a position within the image sensor die. The BDTI structure includes a trench filling layer surrounded by an isolation dielectric stack. The pixel dielectric stack has a composition different from that of the isolation dielectric stack.

公开(公告)号：US20220231058A1

公开(公告)日：2022-07-21

申请号：US17327996

申请日：2021-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-Chang Kuo ,  Sheng-Chau Chen ,  Feng-Chi Hung ,  Sheng-Chan Li

IPC: H01L27/146

Abstract: An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.

公开(公告)号：US20220223635A1

公开(公告)日：2022-07-14

申请号：US17321909

申请日：2021-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsing-Chih Lin ,  Feng-Chi Hung ,  Shyh-Fann Ting

IPC: H01L27/146

Abstract: A semiconductor device includes a substrate having a front side and a back side opposite to each other. A plurality of photodetectors is disposed in the substrate within a pixel region. An isolation structure is disposed within the pixel region and between the photodetectors. The isolation structure includes a back side isolation structure extending from the back side of the substrate to a position in the substrate. A conductive plug structure is disposed in the substrate within a periphery region. A conductive cap is disposed on the back side of the substrate and extends from the pixel region to the periphery region and electrically connects the back side isolation structure to the conductive plug structure. A conductive contact lands on the conductive plug structure, and is electrically connected to the back side isolation structure through the conductive plug structure and the conductive cap.

公开(公告)号：US20220223498A1

公开(公告)日：2022-07-14

申请号：US17144717

申请日：2021-01-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zheng-Xun Li ,  Min-Feng Kao ,  Hsing-Chih Lin ,  Jen-Cheng Liu ,  Dun-Nian Yaung

IPC: H01L23/48 ,  H01L21/768

Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.

公开(公告)号：US11342374B2

公开(公告)日：2022-05-24

申请号：US16889161

申请日：2020-06-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung

IPC: H01L27/146 ,  H01L31/18

Abstract: An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.

公开(公告)号：US11244925B2

公开(公告)日：2022-02-08

申请号：US17007233

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Hsun-Ying Huang

IPC: H01L21/768 ,  H01L21/324 ,  H01L21/265 ,  H01L25/065 ,  H01L23/48 ,  H01L29/10

Abstract: The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate.

公开(公告)号：US20210391302A1

公开(公告)日：2021-12-16

申请号：US16898613

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Hsing-Chih Lin ,  Jen-Cheng Liu ,  Yi-Shin Chu ,  Ping-Tzu Chen ,  Che-Wei Chen

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L23/532 ,  H01L21/768

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.

公开(公告)号：US20210391237A1

公开(公告)日：2021-12-16

申请号：US16898647

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Hsing-Chih Lin ,  Jen-Cheng Liu ,  Yi-Shin Chu ,  Ping-Tzu Chen

IPC: H01L23/48 ,  H01L25/065 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard via disposed on a first side of a substrate. An oversized via is disposed on the first side of the substrate and is laterally separated from the standard via. The oversized via has a larger width than the standard via. An interconnect wire vertically contacting the oversized via. A through-substrate via (TSV) extends from a second side of the substrate, and through the substrate, to physically contact the oversized via or the interconnect wire. The TSV has a minimum width that is smaller than a width of the oversized via.

公开(公告)号：US11004880B2

公开(公告)日：2021-05-11

申请号：US17022456

申请日：2020-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Seiji Takahashi ,  Chen-Jong Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Feng-Jia Shiu ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Chun-Wei Chang ,  Wei-Cheng Hsu ,  Wei Chuang Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

公开(公告)号：US20200381512A1

公开(公告)日：2020-12-03

申请号：US16553222

申请日：2019-08-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Hsing-Chih Lin ,  Jen-Cheng Liu ,  Wei-Tao Tsai

IPC: H01L29/06 ,  H01L25/065 ,  H01L23/00 ,  H01L21/768 ,  H01L21/762 ,  H01L23/48 ,  H01L23/522

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a shield structure blocks the migration of charge to a semiconductor device from proximate a through substrate via (TSV). In some embodiments, the IC comprises a substrate, an interconnect structure, the semiconductor device, the TSV, and the shield structure. The interconnect structure is on a frontside of the substrate and comprises a wire. The semiconductor device is on the frontside of the substrate, between the substrate and the interconnect structure. The TSV extends completely through the substrate, from a backside of the substrate to the wire, and comprises metal. The shield structure comprises a PN junction extending completely through the substrate and directly between the semiconductor device and the TSV.