公开(公告)号：US09502380B2

公开(公告)日：2016-11-22

申请号：US14959094

申请日：2015-12-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing-Cheng Lin ,  Shang-Yun Hou

IPC: H01L21/50 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L25/00 ,  H01L21/683 ,  H01L21/60

CPC classification number: H01L25/0652 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2021/6006 ,  H01L2021/6024 ,  H01L2224/02331 ,  H01L2224/0237 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05024 ,  H01L2224/05541 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32227 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor package and a method of forming a semiconductor package with one or more dies over an interposer are provided. In some embodiments, the method is performed by placing an interposer with one or more through-substrate-vias (TSVs) on a first adhesive layer overlying a first carrier substrate. Connection structures are arranged along a first surface of the interposer facing the first adhesive layer. A first molding compound is formed over the first adhesive layer and surrounding the interposer. The first molding compound is arranged to expose the TSVs along a second surface of the interposer. A first redistribution structure is formed over the second surface of the interposer and the first molding compound, and conductive bump structures are formed over the first redistribution structure. A first packaged die is bonded to the conductive bump structures.

Abstract translation: 提供一种半导体封装以及通过中介层形成具有一个或多个管芯的半导体封装的方法。 在一些实施例中，通过将具有一个或多个贯穿衬底通孔（TSV）的插入件放置在覆盖在第一载体衬底上的第一粘合剂层上来执行该方法。 连接结构沿着面向第一粘合剂层的中介层的第一表面布置。 在第一粘合剂层上形成第一模塑料并围绕插入件。 第一模塑料被布置成沿着插入件的第二表面暴露TSV。 第一再分配结构形成在插入件的第二表面和第一模塑料上，并且在第一再分配结构上形成导电凸块结构。 第一封装管芯结合到导电凸块结构。