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    End-pumped vertical external cavity surface emitting laser
    152.
    发明授权
    End-pumped vertical external cavity surface emitting laser 有权
    端泵浦垂直外腔表面发射激光

    公开(公告)号：US07526009B2

    公开(公告)日：2009-04-28

    申请号：US11399391

    申请日：2006-04-07

    Applicant: Jun-ho Lee

    Inventor： Jun-ho Lee

    IPC: H01S3/091

    CPC classification number: H01S5/183 ,  H01S3/109 ,  H01S5/02 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/024 ,  H01S5/041 ,  H01S5/14

    Abstract: There is provided an end-pumped vertical external cavity surface emitting laser (VECSEL) in which a pump laser beam is incident on a laser chip at a right angle. In the external cavity surface emitting laser, a laser chip package is provided with a laser chip emitting light at a first wavelength by optical pumping, an external mirror is spaced apart from a top surface of the laser chip package to transmit a portion of the light emitted from the laser chip to the outside and to reflect the remainder to the laser chip, a heat sink is coupled to the bottom surface of the laser chip package to discharge heat generated by the laser chip, and a pump laser faces a bottom surface of the heat sink to emit pump light at a second wavelength perpendicular to the laser chip.

    Abstract translation: 提供了一种端泵浦垂直外腔表面发射激光器（VECSEL），其中泵激光束以直角入射在激光芯片上。 在外腔表面发射激光器中，激光芯片封装设置有通过光泵浦发射第一波长的光的激光芯片，外部反射镜与激光芯片封装的顶表面间隔开以传输光的一部分 从激光芯片发射到外部并将剩余部分反射到激光芯片，散热器耦合到激光芯片封装的底表面，以排放由激光芯片产生的热量，并且泵激光器面向 散热器以垂直于激光芯片的第二波长发射泵浦光。

    BURNING APPARATUS FOR FLUORESCENT LAMP
    153.
    发明申请
    BURNING APPARATUS FOR FLUORESCENT LAMP 审中-公开
    用于荧光灯的燃烧装置

    公开(公告)号：US20090081915A1

    公开(公告)日：2009-03-26

    申请号：US12132117

    申请日：2008-06-03

    Applicant: Jun Ho LEE

    Inventor： Jun Ho LEE

    IPC: H01J9/00

    CPC classification number: H01J9/48

    Abstract: A burning apparatus comprises at least one furnace, at least one conveyor to transfer a quartz tube containing at least one fluorescent bulb near the furnace, and a quartz tube holder for holding the quartz tube on the conveyor. The apparatus may further include a rotating device for rotating the quartz tube held by the quartz tube holder. The rotating device may include at least one roller that is in rolling contact with the quartz tube.

    Abstract translation: 燃烧装置包括至少一个炉，至少一个输送机，用于将在炉附近包含至少一个荧光灯泡的石英管转移，以及用于将石英管保持在输送机上的石英管保持器。 该装置还可以包括用于旋转由石英管保持器保持的石英管的旋转装置。 旋转装置可以包括与石英管滚动接触的至少一个辊。

    ADHESIVE FILM FOR STACKING SEMICONDUCTOR CHIPS
    155.
    发明申请
    ADHESIVE FILM FOR STACKING SEMICONDUCTOR CHIPS 有权
    用于堆叠半导体芯片的粘合膜

    公开(公告)号：US20080226884A1

    公开(公告)日：2008-09-18

    申请号：US11950470

    申请日：2007-12-05

    Applicant: Chang-Hoon SIM ,  Ki-Jeong Moon ,  Hae-Sang Jun ,  Jun-Ho Lee ,  Yun-Min Park

    Inventor： Chang-Hoon SIM ,  Ki-Jeong Moon ,  Hae-Sang Jun ,  Jun-Ho Lee ,  Yun-Min Park

    IPC: B32B7/02 ,  B32B27/38

    CPC classification number: H01L24/83 ,  C09J7/10 ,  C09J2201/36 ,  C09J2461/00 ,  C09J2463/00 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/29083 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T428/24975 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

    Abstract: The invention concerns an adhesive film for stacking chips which enables chips to be stacked in layers without using a separate spacer usually provided to keep a given distance between wires of an upper chip and a lower chip to have the same area. The adhesive film of the invention has an intermediate adhesive layer of thermoplastic phenoxy resin on both side of which a thermosetting adhesive layer of epoxy resin is placed, respectively, to make a three-layer structure, the thermoplastic phenoxy resin comprising UV curable small molecule compounds. The adhesive film of the invention is a multi-layered adhesive film produced by a method of comprising the steps of achieving compatibility on an interface between the thermosetting epoxy resin and thermoplastic phenoxy resin and then directly forming a phenoxy film of a high elastic modulus through UV curing in an adhesive film. With such a configuration, the adhesive film for stacking semiconductor chips according to the invention enables the semiconductor silicone chips to be stacked in 3 or more layers without using a separate spacer between chips in order to keep a wire distance between upper and lower chips in stacking the chips. With the configuration, it is advantageous that reliability of semiconductors is not lowered because adhesiveness is kept despite of a repeated process of stacking chips subject to high temperature.

    Abstract translation: 本发明涉及一种用于堆叠芯片的粘合膜，其使得芯片能够层叠而不使用通常设置用于保持上芯片和下芯片的导线之间的给定距离的单独间隔件具有相同的面积。 本发明的粘合膜具有热塑性苯氧基树脂的中间粘合剂层，其两侧分别放置环氧树脂的热固性粘合剂层以制成三层结构，所述热塑性苯氧基树脂包含可UV固化的小分子化合物 。 本发明的粘合膜是通过以下方法制造的多层粘合膜，该粘合膜包括以下步骤：在热固性环氧树脂和热塑性苯氧基树脂之间的界面上实现相容性，然后通过UV直接形成具有高弹性模量的苯氧基膜 在粘合膜中固化。 通过这样的结构，根据本发明的用于堆叠半导体芯片的粘合膜能够使半导体硅芯片层叠成3层以上，而不需要在芯片之间使用单独的间隔物，以便在堆叠中保持上下芯片之间的线间距 芯片。 通过该结构，由于尽管重叠堆叠处于高温的芯片的过程，因此保持了粘附性，因此有利的是半导体的可靠性不降低。

    DEVELOPING UNIT HAVING DEVELOPER FEEDING PLATE AND IMAGE FORMING APPARATUS HAVING THE SAME
    156.
    发明申请
    DEVELOPING UNIT HAVING DEVELOPER FEEDING PLATE AND IMAGE FORMING APPARATUS HAVING THE SAME 有权
    具有开发者进料板和图像形成装置的开发单元

    公开(公告)号：US20080193170A1

    公开(公告)日：2008-08-14

    申请号：US11964981

    申请日：2007-12-27

    Applicant: Jun-ho LEE ,  Dong-hoon Park

    Inventor： Jun-ho LEE ,  Dong-hoon Park

    IPC: G03G15/08

    CPC classification number: G03G15/0887 ,  G03G15/0877 ,  G03G2215/0841

    Abstract: A developing unit includes a developer feeding unit which feeds developer to an image receptor, a casing which supports the developer feeding unit and includes a developer storing part provided in an area to face the developer feeding unit and to store the developer, and a developer feeding plate which is formed with a developer flowing hole through which the developer flows, and is provided to move between the developer storing part and the developer feeding unit.

    Abstract translation: 显影单元包括将显影剂供给到图像接收器的显影剂供给单元，支撑显影剂供给单元的壳体，并且包括设置在面向显影剂供给单元的区域中并且存储显影剂的显影剂储存部分，以及显影剂供给 板形成有显影剂流动孔，显影剂流过该显影剂流动孔，并被设置成在显影剂储存部分和显影剂供给单元之间移动。

    PLASMA DISPLAY AND DRIVING METHOD THEREOF
    157.
    发明申请
    PLASMA DISPLAY AND DRIVING METHOD THEREOF 审中-公开
    等离子体显示及其驱动方法

    公开(公告)号：US20080191971A1

    公开(公告)日：2008-08-14

    申请号：US11967752

    申请日：2007-12-31

    Applicant: Seung-Min Kim ,  Woo-Joon Chung ,  Seung-Won Choi ,  Tae-Seong Kim ,  Jun-Ho Lee

    Inventor： Seung-Min Kim ,  Woo-Joon Chung ,  Seung-Won Choi ,  Tae-Seong Kim ,  Jun-Ho Lee

    IPC: G09G3/28

    CPC classification number: G09G3/2925 ,  G09G3/2927 ,  G09G3/296 ,  G09G2310/066 ,  G09G2330/028

    Abstract: In a plasma display device and a driving method thereof, a switch for applying a voltage rising waveform to a scan electrode during an idle period and a first period is coupled between the scan electrode and a power source. The switch applies the voltage rising waveform having a first slope by being repeatedly turned on/off according to a first control signal during the idle period, and/or the switch applies the voltage rising waveform having a second slope (having a higher gradient than the first slope) by being repeatedly turned on/off according to a second control signal during the first period. As such, the scan electrode voltage is increased with the first slope during the idle period to perform a more stable reset operation. Also, when the idle period does not exist, the voltage of the scan electrode is increased within the first period to enable a normal reset operation.

    Abstract translation: 在等离子体显示装置及其驱动方法中，在扫描电极和电源之间耦合用于在空闲周期和第一周期期间向扫描电极施加升压波形的开关。 开关通过在空闲期间根据第一控制信号重复接通/断开，施加具有第一斜率的升压波形，和/或开关施加具有第二斜率（比梯形图 第一斜坡），通过在第一时段期间根据第二控制信号重复地接通/断开。 这样，在空闲期间，扫描电极电压随着第一斜率增加，以执行更稳定的复位操作。 此外，当空闲时段不存在时，扫描电极的电压在第一时间段内增加，以使得能够进行正常的复位操作。

    Vertical external cavity surface emitting laser (VECSEL)
    158.
    发明授权
    Vertical external cavity surface emitting laser (VECSEL) 有权
    垂直外腔表面发射激光（VECSEL）

    公开(公告)号：US07406108B2

    公开(公告)日：2008-07-29

    申请号：US11500916

    申请日：2006-08-09

    Applicant: Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

    Inventor： Jun-ho Lee ,  Taek Kim ,  Sang-moon Lee

    IPC: H01S3/10

    CPC classification number: H01S5/18383 ,  H01S3/08072 ,  H01S3/109 ,  H01S5/0213 ,  H01S5/024 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18305

    Abstract: The VECSEL includes: a heat spreader dissipating generated heat; a laser chip that is disposed on the heat spreader and is excited by a pump beam of a predetermined wavelength to emit a beam of a first wavelength; a Second Harmonic Generation (SHG) crystal that is disposed on the laser chip or the heat spreader and converts the laser beam of the first wavelength emitted from the laser chip into a beam having a second wavelength that is one-half the first wavelength; and a planar external cavity mirror that is directly formed on the SHG crystal and has a predetermined transmittance with respect to the beam of the second wavelength.

    Abstract translation: VECSEL包括：散热器散热产生的热量; 激光芯片，其布置在散热器上并被预定波长的泵浦光束激发以发射第一波长的光束; 第二谐波产生（SHG）晶体，其设置在激光芯片或散热器上，并将从激光芯片发射的第一波长的激光束转换成具有第二波长的第二波长的第一波长的一半的光束; 以及直接形成在SHG晶体上并且相对于第二波长的光束具有预定透射率的平面外腔镜。

    Semiconductor device and methods thereof
    160.
    发明申请
    Semiconductor device and methods thereof 有权
    半导体器件及其方法

    公开(公告)号：US20070246802A1

    公开(公告)日：2007-10-25

    申请号：US11702624

    申请日：2007-02-06

    Applicant: Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    Inventor： Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    IPC: H01L23/58 ,  H01L21/469

    CPC classification number: H01L21/02609 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02532

    Abstract: A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.

    Abstract translation: 半导体器件及其方法。 示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层 ，第一层，第二层和第三层各自相对于多个晶面之一高度取向。 示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层 第三层各自相对于多个晶面之一高度取向。

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