公开(公告)号：US20170222028A1

公开(公告)日：2017-08-03

申请号：US15493215

申请日：2017-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Suzunosuke HIRAISHI

IPC: H01L29/66 ,  H01L21/385 ,  H01L21/4757 ,  H01L29/786 ,  H01L21/441

CPC classification number: H01L27/1225 ,  H01L21/385 ,  H01L21/441 ,  H01L21/47573 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

公开(公告)号：US20170207247A1

公开(公告)日：2017-07-20

申请号：US15477646

申请日：2017-04-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/36 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

公开(公告)号：US20170104089A1

公开(公告)日：2017-04-13

申请号：US15286892

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L23/31 ,  H01L23/29 ,  H01L29/40 ,  H01L29/49

CPC classification number: H01L29/66969 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/383 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/408 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L29/78696

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.

公开(公告)号：US20170104013A1

公开(公告)日：2017-04-13

申请号：US15385157

申请日：2016-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Shunpei YAMAZAKI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

公开(公告)号：US20170053950A1

公开(公告)日：2017-02-23

申请号：US15346173

申请日：2016-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

Abstract translation: 提供了包括其中导通电流高的氧化物半导体的半导体器件。 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 设置在驱动电路部分的第一晶体管包括设置氧化物半导体膜的两个栅电极。

公开(公告)号：US20160343868A1

公开(公告)日：2016-11-24

申请号：US15160059

申请日：2016-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region and a drain region each in contact with the second insulating film. The channel region includes a first layer and a second layer in contact with a top surface of the first layer and covering a side surface of the first layer in the channel width direction. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

Abstract translation: 提高了包括氧化物半导体的晶体管的可靠性。 半导体器件中的晶体管包括第一绝缘膜上的第一氧化物半导体膜，第一氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的第二氧化物半导体膜，以及第一氧化物半导体上的第二绝缘膜 膜和第二氧化物半导体膜。 第一氧化物半导体膜包括与第二氧化物半导体膜重叠的沟道区，与第二绝缘膜接触的源极区和漏极区。 沟道区域包括与第一层的顶表面接触并在沟道宽度方向覆盖第一层的侧表面的第一层和第二层。 第二氧化物半导体膜具有比第一氧化物半导体膜更高的载流子密度。

公开(公告)号：US20160299601A1

公开(公告)日：2016-10-13

申请号：US15091295

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/044 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L29/786

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/323 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

Abstract translation: 提供了包括具有导电性的氧化物半导体膜的触摸面板。 触摸面板包括晶体管，第二绝缘膜和触摸传感器。 晶体管包括栅电极; 栅极绝缘膜; 第一氧化物半导体膜; 源电极和漏电极; 第一绝缘膜; 和第二氧化物半导体膜。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。 触摸传感器包括第一电极和第二电极。 第一和第二电极中的一个包括第二氧化物半导体膜。

公开(公告)号：US20160268441A1

公开(公告)日：2016-09-15

申请号：US15161329

申请日：2016-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1339 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1335

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US20160260751A1

公开(公告)日：2016-09-08

申请号：US15058354

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

Abstract translation: 提供了开口率增加时具有高电容的半导体器件或制造成本低的半导体器件。 半导体器件包括晶体管，第一绝缘膜和在一对电极之间包括第二绝缘膜的电容器。 晶体管包括栅电极，与栅电极接触的栅极绝缘膜，与栅电极重叠的第一氧化物半导体膜，以及与第一氧化物半导体膜电连接的源电极和漏电极。 电容器的一对电极之一包括第二氧化物半导体膜。 第一绝缘膜在第一氧化物半导体膜上。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。

公开(公告)号：US20160240566A1

公开(公告)日：2016-08-18

申请号：US15140837

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Masami JINTYOU ,  Takumi SHIGENOBU ,  Naoto GOTO

IPC: H01L27/12 ,  H01L29/24 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/044 ,  G06F3/041 ,  G02F1/1335 ,  H01L29/786 ,  G02F1/1343

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.