摘要:
As each of sampling switch elements turns on in response to a scanning signal, a signal voltage from a signal wire is held on and written into a sampling capacitor. At this time, the signal voltage is held on the sampling capacitor on the basis of a common electrode. As the scanning signal transitions from high level to low level, each of the sampling switch elements turns off and changes into a floating state in which the sampling capacitor is electrically insulated from the signal wire and a driving TFT. As the scanning signal changes from high level to low level, each of the driving switches becomes conductive so that the signal voltage held on the sampling capacitor is applied as it is between the source and gate of the driving TFT as a bias voltage to make the driving TFT conductive, causing an organic LED to emit light.
摘要:
Each pixel of an image display device has pixel switch that is a poly-Si TFT of a first type structure, a pixel electrode for applying an electric field to an electro-optical material, gate lines connected to the pixel switches, signal lines connected to the pixel electrodes via the pixel switches, and a display signal voltage applying circuit containing a poly-Si TFT of a second type structure for applying display signal voltages to the signal lines. Gates of the first type TFTs, connected to the gate lines, oppose a first side of a first poly-Si thin film for forming a channel of these TFTs, with a first gate insulating film interposed therebetween. Gates of the second type TFTs oppose a first side of a second poly-Si thin film for forming a channel of these TFTs, with a second gate insulating film interposed therebetween. Sources and drains of the TFTs of the first and second type structures are disposed approximately in one plane on a substrate of the image display device, and the first side of the first poly-Si thin film and the first side of the second poly-Si thin film are on opposite sides of the one plane.
摘要:
There is provided a customized personal terminal device capable of operating in response to input data peculiar to the operator, comprising a speech recognition unit for recognizing inputted speech, an image recognition unit for recognizing inputted image, and an instruction recognition unit for recognizing an inputted instruction. Neural networks are provided in at least two of the speech, image and instruction recognition units, a bus operatively connected to the respective recognition units, a processor operatively connected to the bus to perform processing upon the speech, and image and instruction recognized by the recognition units. Also, memory is operatively connected to the bus, and a control unit exercises control over information exchange between respective recognition units and the memory under the control of the processor.
摘要:
The present invention relates to an improved solid-state imaging device having pixel amplifiers. The higher definition of the device results in the increase in number of pixels as large as not less than two million. When a solid-state imaging device having such a large number of pixels is provided with pixel amplifiers, there arise various problems associated with a power source and a power supply line as well as a problem inherent to the pixel amplifier type of solid-state imaging device. The present invention provides a solid-state imaging device in which noises or the like are prevented and a picture or image quality having high definition can be obtained, by suppressing a voltage drop of the power supply line and by compensating fluctuations in outputs of the pixel amplifiers.
摘要:
A solid-state imaging device has a plurality of light receiving elements formed in a semiconductor substrate. Signal electric charges generated by light incident upon the light receiving elements and stored in the individual light receiving elements are sequentially read out through signal lines by scanning a plurality of switches. Each of the switches includes a series connection of a first MOS transistor switching element formed in the semiconductor substrate and a second MOS transistor formed in a semiconductor provided above the semiconductor substrate through an insulator. The first switching element is disposed on the side of the light receiving element and the second switching element is disposed on the side of the signal output terminal.
摘要:
A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.
摘要:
A display device with a touch pad function is provided which reduces the elements required to form a photo sensor while still accurately detecting input coordinate positions. The display device includes a display part on which a plurality of pixels are arranged in a matrix array, a plurality of photo detection circuits which are arranged in a matrix array in the inside of the display part, wherein each photo detection circuit of the plurality of photo detection circuits includes: a photo sensor which converts an incident light into a optical current corresponding to intensity of the incident light, an integral capacitance which integrates the optical current converted by the photo sensor, and a comparator to which a voltage of the integral capacitance is inputted, and the comparator includes a transistor of an open drain output type with a grounded source.
摘要:
A display apparatus comprises a self-luminous device display having a plurality of light emitting elements arranged in a matrix, a drive voltage generation circuit to generate a drive voltage signal for driving light emitting elements, a blanking period control-included data line drive circuit which controls the drive voltage either according to or irrelevantly to the display data, a scan line drive circuit to determine which light emitting elements to drive, and a pixel control circuit to control voltage written to pixels.
摘要:
A self-emission type display device is disclosed. A current comparator circuit (47) in a data line drive circuit having a current compensating function (2) detects only the result of size comparison between the current amount due to the degeneration of a self-emission element and a reference value. The reduction of the current amount below the reference value is stored by being added to the least significant bits of a display data storage circuit (30). In accordance with the display data read from the storage circuit (30), a D/A conversion circuit (41) generates a write signal voltage.
摘要:
In an image display device, each pixel includes a drive transistor for driving a light emitting element, a capacitive element which is connected between a signal line and a control electrode of the drive transistor, and a reset switching element. The reset switching elements of all pixels are turned off within a light emission period, and a PWM signal is supplied to a signal line from a drive circuit. A cycle of the PWM signal in a low brightness display mode is shorter than a cycle of the PWM signal in a standard brightness display mode. Due to such a constitution, the constitution of a drive circuit can be simplified, and it is possible to control light emission brightnesses of respective pixels of red, green and blue over a wide range from high brightness to low brightness while taking a balance among the light emission brightnesses.