LOW OPEN AREA AND COUPON ENDPOINT DETECTION

    公开(公告)号:US20240420975A1

    公开(公告)日:2024-12-19

    申请号:US18821843

    申请日:2024-08-30

    Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more sub-arrays of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tubes (PMT), specifically multi-anode PMT.

    INTEGRATED GAS BOX AND ION SOURCE
    162.
    发明申请

    公开(公告)号:US20240420920A1

    公开(公告)日:2024-12-19

    申请号:US18210884

    申请日:2023-06-16

    Abstract: An integrated gas box is disclosed. The integrated gas box is an enclosure, wherein one wall of the enclosure includes an aperture. A bushing is affixed to the exterior of this wall. The distal end of the bushing has a flange that is affixed to a wall of the vacuum chamber. The ion source is introduced into the bushing through an access door in the enclosure and slides into the aperture. The base flange of the ion source is sufficiently large such that it cannot pass through the aperture and forms a seal between the bushing and the interior of the integrated gas box. The integrated gas box includes the gas canisters and associated valves which are used to supply feed gas and diluent gasses to the ion source. The integrated gas box also houses the power supplies used to bias the components within the ion source.

    Detection of surface particles on chamber components with carbon dioxide

    公开(公告)号:US12169163B2

    公开(公告)日:2024-12-17

    申请号:US18493742

    申请日:2023-10-24

    Abstract: A distribution unit of a particle detection system initiates a particle collection process to dislodge one or more surface particles from a surface of an article based on a stream including at least one of solid CO2 particles or CO2 droplets. The dislodged surface particles are collected on a surface of a substrate having a pre-determined initial state including initial surface particles of the substrate. A measurement indicating a particle number concentration of detectable surface particles on the substrate after the particle collection process is completed is obtained. An initial particle number concentration of the initial surface particles of the pre-determined initial state is identified. A number of particles transported away from the surface of the article is determined based on the obtained measurement and the identified initial particle concentration.

    HIGH-PRECISION IN-SITU VERIFICATION AND CORRECTION OF WAFER POSITION AND ORIENTATION FOR ION IMPLANT

    公开(公告)号:US20240412997A1

    公开(公告)日:2024-12-12

    申请号:US18391503

    申请日:2023-12-20

    Abstract: Disclosed herein are approaches for in-situ verification and correction of a wafer position. In one approach, a method may include illuminating an underside of a platen positioned within a processing chamber, and detecting a perimeter edge of the platen using an imaging device positioned external to the processing chamber, above the platen. The method may further include determining, via a controller, position data for the platen based on the detected perimeter edge of the platen, and positioning a wafer atop the platen based on the position data of the platen, wherein the wafer comprises a positioning notch. The method may further include detecting a position of the wafer and a position of the positioning notch using the imaging device, and comparing the position data of the platen to the detected position of the wafer and comparing the detected position of the positioning notch to an expected notch position

    Optical resolution measurement method for optical devices

    公开(公告)号:US12165341B2

    公开(公告)日:2024-12-10

    申请号:US17534167

    申请日:2021-11-23

    Abstract: Embodiments herein provide for a method of determining an optical device modulation transfer function (MTF). The method described herein includes projecting a baseline image of a pattern from a light engine to a detector. The baseline image is analyzed to determine a baseline function. A baseline fast Fourier transform (FFT) or a baseline MTF of the baseline function is obtained. The method further includes projecting an image of the pattern from the light engine to one or more optical devices. The pattern is outcoupled from the one or more optical devices to the detector. The image is analyzed to determine a function. A function FFT or a function MTF is obtained corresponding to the image. An optical device MTF of the one or more optical devices is determined by comparing the baseline FFT and the function FFT determined by analyzing the image or by comparing the baseline MTF and the function MTF determined by analyzing the image.

    APRIORI APPLICATION WITH DYNAMIC DIGITAL CORRECTION (DDC) FUNCTION

    公开(公告)号:US20240404893A1

    公开(公告)日:2024-12-05

    申请号:US18677184

    申请日:2024-05-29

    Abstract: Embodiments of the present disclosure generally relate to lithography systems. In one embodiment, a method is disclosed. The method includes measuring a location of a die pad of a die placed on a substrate and determining a die pad shift between an expected location of the die pad and the measured location of the die pad. The method also includes using the determined die pad shift and an expected via location to generate a shifted via location for a via electrically connecting to the die pad. The method further includes patterning the via at the shifted via location with a maskless lithography tool and utilizing a physical mask with a mask-based lithography tool to pattern a redistribution layer (RDL) pad electrically connected to the via patterned at the shifted via location with the maskless lithography tool.

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