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公开(公告)号:US20240420975A1
公开(公告)日:2024-12-19
申请号:US18821843
申请日:2024-08-30
Applicant: APPLIED MATERIALS, INC.
Inventor: Varoujan Chakarian , Blake W Erickson
Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more sub-arrays of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tubes (PMT), specifically multi-anode PMT.
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公开(公告)号:US20240420920A1
公开(公告)日:2024-12-19
申请号:US18210884
申请日:2023-06-16
Applicant: Applied Materials, Inc.
Inventor: William H. Leavitt , Shengwu Chang , William H. Park, JR.
IPC: H01J37/317 , H01J37/08 , H01J37/32
Abstract: An integrated gas box is disclosed. The integrated gas box is an enclosure, wherein one wall of the enclosure includes an aperture. A bushing is affixed to the exterior of this wall. The distal end of the bushing has a flange that is affixed to a wall of the vacuum chamber. The ion source is introduced into the bushing through an access door in the enclosure and slides into the aperture. The base flange of the ion source is sufficiently large such that it cannot pass through the aperture and forms a seal between the bushing and the interior of the integrated gas box. The integrated gas box includes the gas canisters and associated valves which are used to supply feed gas and diluent gasses to the ion source. The integrated gas box also houses the power supplies used to bias the components within the ion source.
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公开(公告)号:US20240416514A1
公开(公告)日:2024-12-19
申请号:US18819400
申请日:2024-08-29
Applicant: Applied Materials, Inc.
Inventor: Nicholas Michael Kopec , Lyle Kosinski , Matvey Farber , Jeffrey Hudgens
IPC: B25J9/16 , B25J21/00 , H01L21/00 , H01L21/67 , H01L21/673
Abstract: A calibration system is of a wafer processing system. The calibration system includes a calibration substrate configured to be disposed on a plurality of support structures of the wafer processing system. The calibration substrate includes a calibration pin. The calibration substrate enables a calibration operation of a robot arm of the wafer processing system to automatically determine robot arm error of the robot arm.
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公开(公告)号:US12169163B2
公开(公告)日:2024-12-17
申请号:US18493742
申请日:2023-10-24
Applicant: APPLIED MATERIALS, INC.
Inventor: Changgong Wang , Zhili Zuo , Chang Ke , Song-Moon Suh
Abstract: A distribution unit of a particle detection system initiates a particle collection process to dislodge one or more surface particles from a surface of an article based on a stream including at least one of solid CO2 particles or CO2 droplets. The dislodged surface particles are collected on a surface of a substrate having a pre-determined initial state including initial surface particles of the substrate. A measurement indicating a particle number concentration of detectable surface particles on the substrate after the particle collection process is completed is obtained. An initial particle number concentration of the initial surface particles of the pre-determined initial state is identified. A number of particles transported away from the surface of the article is determined based on the obtained measurement and the identified initial particle concentration.
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165.
公开(公告)号:US20240412997A1
公开(公告)日:2024-12-12
申请号:US18391503
申请日:2023-12-20
Applicant: Applied Materials, Inc.
Inventor: Michael Lee SWEARS , Santosh Kumar DHULAPATI , James R. MCLANE
Abstract: Disclosed herein are approaches for in-situ verification and correction of a wafer position. In one approach, a method may include illuminating an underside of a platen positioned within a processing chamber, and detecting a perimeter edge of the platen using an imaging device positioned external to the processing chamber, above the platen. The method may further include determining, via a controller, position data for the platen based on the detected perimeter edge of the platen, and positioning a wafer atop the platen based on the position data of the platen, wherein the wafer comprises a positioning notch. The method may further include detecting a position of the wafer and a position of the positioning notch using the imaging device, and comparing the position data of the platen to the detected position of the wafer and comparing the detected position of the positioning notch to an expected notch position
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公开(公告)号:US20240412985A1
公开(公告)日:2024-12-12
申请号:US18731436
申请日:2024-06-03
Applicant: Applied Materials, Inc.
Inventor: Clinton SAKATA , Ricardo MARTINEZ , Robert DUES , Shih-Yu LIU , Tarun Kumar ABICHANDANI , Brian K. KIRKPATRICK , Jagan RANGARAJAN , Adrian S. BLANK , Edward GOLUBOVSKY , Justin H. WONG
IPC: H01L21/67 , B65G47/90 , H01L21/687
Abstract: A substrate cleaning system to remove particulates from multiple substrates includes a cleaning tank for applying a cleaning liquid to substrates, a rinse tank for applying a rinsing liquid to substrates, and a robot system. The cleaning tank includes a stationary lid, an input lid, and an output lid. The input and output lids allow a substrate carrier designed to carry an individual substrate to access an inner volume of the cleaning tank for processing. A transport system moves the substrate in the substrate carrier through the inner volume of the cleaning tank by creating a series of gaps between substrates to allow proper processing. The robot system transports substrates through the input and output lids of the cleaning tank, and transports substrates into the rinse tank.
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公开(公告)号:US20240411085A1
公开(公告)日:2024-12-12
申请号:US18208685
申请日:2023-06-12
Applicant: Applied Materials, Inc.
Inventor: Qintao ZHANG , Eric Jay SIMMONS , Mayrita ARRANDALE , Judeth Campbell SOUKUP , David J. LEE , Samphy HONG
Abstract: Disclosed herein are approaches for adjusting local refractive index for photonics IC systems using selective waveguide ion implantation. In one approach, a method may include depositing an optical device film atop a base layer, patterning the optical device film into a plurality of sections, and implanting a first section of the plurality of sections of the optical device film to adjust a refractive index of the first section.
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公开(公告)号:US12165341B2
公开(公告)日:2024-12-10
申请号:US17534167
申请日:2021-11-23
Applicant: Applied Materials, Inc.
Inventor: Jinxin Fu , Yangyang Sun , Ludovic Godet
Abstract: Embodiments herein provide for a method of determining an optical device modulation transfer function (MTF). The method described herein includes projecting a baseline image of a pattern from a light engine to a detector. The baseline image is analyzed to determine a baseline function. A baseline fast Fourier transform (FFT) or a baseline MTF of the baseline function is obtained. The method further includes projecting an image of the pattern from the light engine to one or more optical devices. The pattern is outcoupled from the one or more optical devices to the detector. The image is analyzed to determine a function. A function FFT or a function MTF is obtained corresponding to the image. An optical device MTF of the one or more optical devices is determined by comparing the baseline FFT and the function FFT determined by analyzing the image or by comparing the baseline MTF and the function MTF determined by analyzing the image.
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公开(公告)号:US20240404960A1
公开(公告)日:2024-12-05
申请号:US18788906
申请日:2024-07-30
Applicant: Applied Materials, Inc.
Inventor: Guan Huei SEE , Ramesh CHIDAMBARAM
IPC: H01L23/538 , H01L21/48 , H01L21/50 , H01L21/60 , H01L21/768 , H01L23/13 , H01L23/14 , H01L23/498 , H01L23/66 , H01L25/065 , H01L25/10 , H01L27/06 , H01Q1/22 , H01Q1/24 , H05K1/02
Abstract: The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for radio frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more radio frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency elements with reduced signal loss caused by the silicon substrate.
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公开(公告)号:US20240404893A1
公开(公告)日:2024-12-05
申请号:US18677184
申请日:2024-05-29
Applicant: Applied Materials, Inc.
Inventor: Shih-Hao KUO , Shih-Hsien LEE , Thomas L. LAIDIG , Jang Fung CHEN , Min Sheng SUEN
IPC: H01L21/66 , H01L23/495
Abstract: Embodiments of the present disclosure generally relate to lithography systems. In one embodiment, a method is disclosed. The method includes measuring a location of a die pad of a die placed on a substrate and determining a die pad shift between an expected location of the die pad and the measured location of the die pad. The method also includes using the determined die pad shift and an expected via location to generate a shifted via location for a via electrically connecting to the die pad. The method further includes patterning the via at the shifted via location with a maskless lithography tool and utilizing a physical mask with a mask-based lithography tool to pattern a redistribution layer (RDL) pad electrically connected to the via patterned at the shifted via location with the maskless lithography tool.
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