公开(公告)号：US20190316256A1

公开(公告)日：2019-10-17

申请号：US16382643

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US20190157067A1

公开(公告)日：2019-05-23

申请号：US16195168

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/02

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

公开(公告)号：US10242885B2

公开(公告)日：2019-03-26

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/302 ,  H01L21/465 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/28

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US10233541B2

公开(公告)日：2019-03-19

申请号：US13923599

申请日：2013-06-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson

IPC: C23C16/00 ,  C23C16/40

Abstract: Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.

公开(公告)号：US20190078203A1

公开(公告)日：2019-03-14

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/52 ,  C23C16/455 ,  C23C16/513

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US10199215B2

公开(公告)日：2019-02-05

申请号：US15684827

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Schubert S. Chu ,  Jessica S. Kachian ,  David Thompson ,  Jeffrey Anthis

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  H01L21/283 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US20180366322A1

公开(公告)日：2018-12-20

申请号：US16013884

申请日：2018-06-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.

公开(公告)号：US10147599B2

公开(公告)日：2018-12-04

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US10096514B2

公开(公告)日：2018-10-09

申请号：US15658846

申请日：2017-07-25

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.

公开(公告)号：US20180204721A1

公开(公告)日：2018-07-19

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.